Abstract: An object of the present invention is to provide a waterproof moisture-permeable fabric suppressed in appearance abnormality and deterioration in barrier properties. A waterproof moisture-permeable fabric including a protective layer and a polyethylene microporous film that are stacked on each other with a synthetic rubber-based hot-melt adhesive, an olefinic hot-melt adhesive, or a composite hot-melt adhesive interposed therebetween, having a nonpolar oil content of 2 g/m2 or less, and a polar oil content of 0.01 g/m2 or more and 6 g/m2 or less.

Abstract: An object of the present invention is to provide a waterproof moisture-permeable fabric suppressed in appearance abnormality and deterioration in barrier properties. A waterproof moisture-permeable fabric including a protective layer and a polyethylene microporous film that are stacked on each other with a synthetic rubber-based hot-melt adhesive, an olefinic hot-melt adhesive, or a composite hot-melt adhesive interposed therebetween, having a nonpolar oil content of 2 g/m2 or less, and a polar oil content of 0.01 g/m2 or more and 6 g/m2 or less.

Abstract: The present invention provides a protective clothing having high dust proof property which prevents powder dust from entering into the clothing and having high air permeability for comfortable work, in which the temperature does not rise easily even in summer. A dust-proof clothing using the following dust-proof material, wherein i) the dust-proof material has a fiber layer and an electret nonwoven fabric layer, and a total number of the fiber layer and the electret nonwoven fabric layer is 2 or more; and ii) in the dust-proof material, the fiber layer and the electret nonwoven fabric layer, which are adjacent to each other, are adhered on a region having an area ratio of 5% or more and 10% or less.

Abstract: A semiconductor device production method which includes steps of: preparing a wafer on which multiple integrated circuits are formed on a principal face; forming a rewiring which is electrically connected to the integrated circuits via a pad electrode; and dicing the wafer after forming an electrode terminal on the rewiring, including steps of: forming a first resin layer by sealing at least the rewiring and the electrode terminal formed on the principal face of the wafer with a first resin; processing a first dicing from a back face of the wafer to the principal face of the wafer or halfway to the first resin layer when the first resin layer is formed; forming a second resin layer by sealing a cut line outlined upon the first dicing and the back face of the wafer continuously with a first resin; and processing a second dicing while leaving the second resin layer which covers a side face outlined upon the first dicing.

Abstract: A semiconductor device production method which includes steps of: preparing a wafer on which multiple integrated circuits are formed on a principal face; forming a rewiring which is electrically connected to the integrated circuits via a pad electrode; and dicing the wafer after forming an electrode terminal on the rewiring, including steps of: forming a first resin layer by sealing at least the rewiring and the electrode terminal formed on the principal face of the wafer with a first resin; processing a first dicing from a back face of the wafer to the principal face of the wafer or halfway to the first resin layer when the first resin layer is formed; forming a second resin layer by sealing a cut line outlined upon the first dicing and the back face of the wafer continuously with a first resin; and processing a second dicing while leaving the second resin layer which covers a side face outlined upon the first dicing.