Patents by Inventor Taketoshi TOMIOKA
Taketoshi TOMIOKA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11521886Abstract: An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.Type: GrantFiled: September 22, 2020Date of Patent: December 6, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Yasuharu Sasaki, Taketoshi Tomioka, Hiroki Kishi, Jisoo Suh
-
Publication number: 20210327741Abstract: A substrate support is provided that includes: a base; an electrostatic chuck on which a substrate is placed; an electrode provided in the electrostatic chuck; a contact portion of the electrode; an adhesive layer that bonds the electrostatic chuck with the base and that does not cover the contact portion; and a power supply terminal contacting the contact portion of the electrode without being fixed to the contact portion.Type: ApplicationFiled: September 3, 2019Publication date: October 21, 2021Inventors: Akira NAGAYAMA, Yasuharu SASAKI, Taketoshi TOMIOKA, Shin YAMAGUCHI
-
Publication number: 20210319987Abstract: An edge ring to be disposed to encircle a substrate is provided. The edge ring includes a bottom used to define vertical heights that are from points on the circumference of a virtual circle, to the bottom of the edge ring, the virtual circle having a radius from a first point that is placed on a central axis of the edge ring, the first point being defined as the center of the virtual circle, the radius being half of a diameter ranging from an inner diameter to an outer diameter of the edge ring, and an absolute value indicative of a difference between a maximum value and a minimum value for the vertical heights being set to be less than or equal to a preset upper limit.Type: ApplicationFiled: April 1, 2021Publication date: October 14, 2021Inventors: Ryo CHIBA, Akira NAGAYAMA, Yasuharu SASAKI, Daiki SATOH, Taketoshi TOMIOKA
-
Publication number: 20210316416Abstract: A focus ring is disposed on a peripheral portion of a lower electrode that receives a substrate thereon in a process container so as to contact a member of the lower electrode. The focus ring includes a contact surface that contacts the member of the lower electrode and is made of any one of a silicon-containing material, alumina and quartz. At least one of the contact surface of the focus ring and a contact surface of the member of the lower electrode has surface roughness of 0.1 micrometers or more.Type: ApplicationFiled: June 25, 2021Publication date: October 14, 2021Inventors: Taketoshi TOMIOKA, Yasuharu SASAKI, Hiroki KISHI, Jisoo SUH
-
Publication number: 20210005495Abstract: An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.Type: ApplicationFiled: September 22, 2020Publication date: January 7, 2021Applicant: TOKYO ELECTRON LIMITEDInventors: Yasuharu SASAKI, Taketoshi TOMIOKA, Hiroki KISHI, Jisoo SUH
-
Patent number: 10825709Abstract: An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.Type: GrantFiled: March 22, 2019Date of Patent: November 3, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Yasuharu Sasaki, Taketoshi Tomioka, Hiroki Kishi, Jisoo Suh
-
Patent number: 10714370Abstract: A mounting table includes a base and an electrostatic chuck provided on the base. The base has first and second top surface on which the electrostatic chuck and a focus ring are respectively provided. The second top surface is provided below the first top surface. A coolant path in the base has central and peripheral paths extending below the first and second top surfaces, respectively. The peripheral path has a portion extending along a side surface toward the first top surface. The mounting surface has central and peripheral regions. The mounting surface has protrusions formed in a dot shape. The protrusions are formed such that a contact area between the protrusions of the peripheral region and the backside of an object per unit area becomes greater than a contact area between the protrusions of the central region and the backside of the object per unit area.Type: GrantFiled: February 27, 2014Date of Patent: July 14, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Taketoshi Tomioka, Taku Gohira, Toshiyuki Makabe
-
Publication number: 20190221464Abstract: An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.Type: ApplicationFiled: March 22, 2019Publication date: July 18, 2019Applicant: TOKYO ELECTRON LIMITEDInventors: Yasuharu SASAKI, Taketoshi TOMIOKA, Hiroki KISHI, Jisoo SUH
-
Patent number: 10269607Abstract: An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.Type: GrantFiled: December 18, 2015Date of Patent: April 23, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Yasuharu Sasaki, Taketoshi Tomioka, Hiroki Kishi, Jisoo Suh
-
Publication number: 20180182635Abstract: A focus ring that surrounds a periphery of a substrate placed on a stage in a processing chamber of a substrate processing apparatus includes a lower surface to contact a peripheral portion of the stage, the lower surface being inclined such that an outer peripheral side becomes lower than an inner peripheral side in a radial direction.Type: ApplicationFiled: December 22, 2017Publication date: June 28, 2018Inventors: Toshiya Tsukahara, Junji Ishibashi, Taketoshi Tomioka, Yasuharu Sasaki, Yohei Uchida
-
Publication number: 20170066103Abstract: A focus ring is disposed on a peripheral portion of a lower electrode that receives a substrate thereon in a process container so as to contact a member of the lower electrode. The focus ring includes a contact surface that contacts the member of the lower electrode and is made of any one of a silicon-containing material, alumina and quartz. At least one of the contact surface of the focus ring and a contact surface of the member of the lower electrode has surface roughness of 0.1 micrometers or more.Type: ApplicationFiled: August 26, 2016Publication date: March 9, 2017Inventors: Taketoshi TOMIOKA, Yasuharu SASAKI, Hiroki KISHI, Jisoo SUH
-
Publication number: 20160189994Abstract: An electrostatic chucking method uses a substrate processing apparatus including an electrostatic chuck, a focus ring, a supply unit configured to supply a heat transfer medium to a space formed between the focus ring and the electrostatic chuck, and a plurality of electrodes provided at a region in the electrostatic chuck which corresponds to the focus ring. The electrostatic chucking method includes supplying by the supply unit the heat transfer medium to the space for a plasma processing period for which a plasma for processing the substrate is generated, and applying different voltages to the plurality of electrodes to attract and hold the focus ring on the electrostatic chuck for a period other than the plasma processing period.Type: ApplicationFiled: December 18, 2015Publication date: June 30, 2016Applicant: TOKYO ELECTRON LIMITEDInventors: Yasuharu SASAKI, Taketoshi TOMIOKA, Hiroki KISHI, Jisoo SUH
-
Publication number: 20140238609Abstract: A mounting table includes a base and an electrostatic chuck provided on the base. The base has first and second top surface on which the electrostatic chuck and a focus ring are respectively provided. The second top surface is provided below the first top surface. A coolant path in the base has central and peripheral paths extending below the first and second top surfaces, respectively. The peripheral path has a portion extending along a side surface toward the first top surface. The mounting surface has central and peripheral regions. The mounting surface has protrusions formed in a dot shape. The protrusions are formed such that a contact area between the protrusions of the peripheral region and the backside of an object per unit area becomes greater than a contact area between the protrusions of the central region and the backside of the object per unit area.Type: ApplicationFiled: February 27, 2014Publication date: August 28, 2014Applicant: TOKYO ELECTRON LIMITEDInventors: Taketoshi TOMIOKA, Taku GOHIRA, Toshiyuki MAKABE