Abstract: A nitride-based transistor includes a semiconductor structure, a gate electrode and a leakage current suppression structure. The semiconductor structure includes a first nitride-based semiconductor layer doped with impurities of a first conductivity type, a second nitride-based semiconductor layer doped with impurities of a second conductivity type, and a third nitride-based semiconductor layer doped with impurities of the first conductivity type. The gate electrode overlaps the second nitride-based semiconductor layer. The leakage current suppression structure is disposed along edges of the semiconductor structure. The leakage current suppression structure includes a depletion layer in at least one of the first and third nitride-based semiconductor layers.

Abstract: A nitride-based transistor includes a semiconductor structure, a gate electrode and a leakage current suppression structure. The semiconductor structure includes a first nitride-based semiconductor layer doped with impurities of a first conductivity type, a second nitride-based semiconductor layer doped with impurities of a second conductivity type, and a third nitride-based semiconductor layer doped with impurities of the first conductivity type. The gate electrode overlaps the second nitride-based semiconductor layer. The leakage current suppression structure is disposed along edges of the semiconductor structure. The leakage current suppression structure includes a depletion layer in at least one of the first and third nitride-based semiconductor layers.

Abstract: A method of fabricating a nitride-based transistor includes sequentially forming a first nitride-based semiconductor layer doped with first type dopant, a second nitride-based semiconductor layer doped with at least one of a second type dopant, and a third nitride-based semiconductor layer doped with at least one of the first type dopants. A first trench is formed to penetrate the third and second nitride-based semiconductor layers and to extend into the first nitride-based semiconductor layer. A fourth nitride-based semiconductor layer doped with the first type dopants is formed to fill the first trench. A second trench is formed in the fourth nitride-based semiconductor layer. A gate electrode is formed in the second trench. A source electrode is formed to be electrically connected to at least one of the third and fourth nitride-based semiconductor layers, and a drain electrode is formed to be electrically connected to the first nitride-based semiconductor layer.

Abstract: A vertical transistor includes a drain electrode disposed on a first region of a substrate, a drift layer disposed on a second region of the substrate spaced apart from the first region, and P-type gallium nitride current barrier layers disposed on the drift layer and comprising a current aperture disposed between current barrier layers. A channel layer is disposed on the drift layer and the current barrier layers. A semiconductor layer is disposed on the channel layer and configured to induce formation of a two-dimension electron gas layer adjacent to a top surface thereof. Metal contact plugs are disposed in the channel layer and contact the current barrier layers. A source electrode is disposed on the contact plugs and the channel layer. A gate insulation layer and a gate electrode are sequentially disposed on a top surface of the semiconductor layer opposite to the channel layer.

Abstract: Provided are a CVD apparatus and a method of manufacturing a light emitting device using the same. The CVD apparatus includes a chamber body including a susceptor having at least one pocket part having a wafer stably mounted therein; a chamber cover provided with the chamber body to open or close the chamber body and having a reaction space between the susceptor and the chamber cover; a reactive gas supplier supplying the reactive gas into the reaction space to allow the reactive gas to flow across a surface of the susceptor; and a non-reactive gas supplier supplying a non-reactive gas into the reaction space to allow the non-reactive gas to flow across a surface of the chamber cover between the susceptor and the chamber cover so as to prevent the reactive gas from contacting the surface of the chamber cover.

Abstract: Provided are a CVD apparatus and a method of manufacturing a light emitting device using the same. The CVD apparatus includes a chamber body including a susceptor having at least one pocket part having a wafer stably mounted therein; a chamber cover provided with the chamber body to open or close the chamber body and having a reaction space between the susceptor and the chamber cover; a reactive gas supplier supplying the reactive gas into the reaction space to allow the reactive gas to flow across a surface of the susceptor; and a non-reactive gas supplier supplying a non-reactive gas into the reaction space to allow the non-reactive gas to flow across a surface of the chamber cover between the susceptor and the chamber cover so as to prevent the reactive gas from contacting the surface of the chamber cover.