Abstract: A mammography apparatus includes: an arm; a first cooling fan that is disposed on a stand side with respect to the radiation source in the arm, sucks air from an outside of the arm, and discharges air that has cooled the radiation source from a first exhaust port provided on the stand side with respect to the radiation source; a projector that is disposed in the arm; a second cooling fan that is disposed between the projector and the first exhaust port in the arm, sucks a part of air directed from the first cooling fan to the first exhaust port, blows the sucked air toward the projector to cool the projector, and has a flow rate smaller than that of the first cooling fan; and a second exhaust port that is provided separately from the first exhaust port and through which air that has cooled the projector is discharged.

Abstract: A mammography apparatus includes: an imaging table; a radiation source; a compression plate that compresses the breast and is movable between the radiation source and the imaging table; a projector that includes a display displaying an image including first information projected onto a first surface facing the radiation source on the imaging table and second information projected onto a second surface facing the radiation source on the compression plate, and a projection optical system, in which a focus of the projection optical system is adjusted in accordance with a projection distance to the first surface; and a processor that is configured to control the display and change at least one of a display size or a display position of the second information in the image on an image display surface of the display in accordance with movement of the compression plate having the second surface independently of the first information.

Abstract: A mammography apparatus includes an arm; and a stand, the arm is provided with a drive mechanism including a motor that rotationally drives the radiation source holding portion, and a first restriction mechanism that restricts rotation of the imaging table about the axis of the support shaft, the first restriction mechanism is disposed on a side opposite to a radiation source with respect to the support shaft, and the drive mechanism is disposed on a radiation source side with respect to the first restriction mechanism and in a case where a center line of the arm extending in a direction connecting the radiation source and a center of the support shaft is assumed, the drive mechanism is disposed so as to intersect the center line.

Abstract: A mammography apparatus includes an imaging table; a radiation source; a stand; the compression plate including a bottom plate that compresses the breast and side plates provided on at least two locations of a subject side and a stand side of the bottom plate; and a projector that projects an image toward the compression plate and the imaging table, in which in a case where an intersection between an imaginary plane formed by extending the inner wall surface toward the projector and an imaginary horizontal line crossing the projector in a horizontal direction is defined as an imaginary intersection, an optical element closest to the compression plate on an optical path directed from the projector to the compression plate is located on the subject side with respect to the imaginary intersection.

Abstract: There is provided a method of well filling copper in a conductivity-rendered non-through hole having an aspect ratio (depth/hole diameter) of 5 or more on a substrate in a short period of time, and the method comprises using an acidic copper plating bath comprising a water-soluble copper salt, sulfuric acid, chlorine ion, a brightener and a copolymer of diallylamines and sulfur dioxide and filling copper in the non-through hole by periodic current reversal copper plating.

Abstract: There is provided a method of well filling copper in a conductivity-rendered non-through hole having an aspect ratio (depth/hole diameter) of 5 or more on a substrate in a short period of time, and the method comprises using an acidic copper plating bath comprising a water-soluble copper salt, sulfuric acid, chlorine ion, a brightener and a copolymer of diallylamines and sulfur dioxide and filling copper in the non-through hole by periodic current reversal copper plating.

Abstract: There is provided a method of well filling copper in a conductivity-rendered non-through hole having an aspect ratio (depth/hole diameter) of 5 or more on a substrate in a short period of time, and the method comprises using an acidic copper plating bath comprising a water-soluble copper salt, sulfuric acid, chlorine ion, a brightener and a copolymer of diallylamines and sulfur dioxide and filling copper in the non-through hole by periodic current reversal copper plating.

Abstract: A semiconductor device formed by forming contact holes in the insulating film, that covers the source/drain of the MOSFET and the capacitor in the memory cell region, on the lower electrode of the capacitor by the same steps, then filling the plugs into contact holes, and then forming the contact hole on the upper electrode of the capacitor. Accordingly, there can be provided the semiconductor device having the ferroelectric capacitor, capable of simplifying respective wiring connection structures to the upper electrode and the lower electrode of the capacitor by suppressing the damage to the capacitor formed over the transistor.

Abstract: There are provided a first insulating film formed over a semiconductor substrate, actual operating capacitors formed on the first insulating film in a memory cell region vertically and horizontally, dummy capacitors formed selectively at four corners of the memory cell region, and a second insulating film formed on the actual operating capacitors and the dummy capacitors.

Abstract: A ferroelectric random access memory has a ferroelectric capacitor formed of a stacking of a lower electrode, a PZT film and an upper electrode of SrRuO3, wherein the PZT film includes pinholes, with a pinhole density of about 17 &mgr;m2 or less.

Abstract: A semiconductor device having conductive plug for connecting capacitor and conductive pattern, comprises first and second impurity diffusion regions formed in a semiconductor substrate, a first insulating film formed over the semiconductor substrate, a first hole formed in the first insulating film on the first impurity diffusion region, a first conductive plug formed in the first hole and made of a metal film, a second hole formed in the first insulating film on the second impurity diffusion region, a second conductive plug formed in the second hole and made of conductive material that is hard to be oxidized rather than the metal film, and a capacitor that consists of a lower electrode connected to an upper surface of the second conductive plug, a dielectric film, and an upper electrode.

Abstract: An image-reading apparatus is provided with a plurality of buffer units between an image-reading unit 6c for reading an image on paper P fed one after another consecutively and an interface 8 for outputting an image data to a host computer 9. The image-reading apparatus suspends feeding of the paper P and reading of the image, and stops operation of its own after all of the image data is output from the buffer unit wherein the image data is written, when operation of a scanner is stopped or temporarily suspended. The invention can thus provide the highly reliable image-reading apparatus that is capable of outputting the entire image data it reads from the original paper without losing it, even if the operation is terminated in the midst of a continuous reading.

Abstract: An image-reading apparatus expands a scanning area along a side at each of both ends in a width direction and a longitudinal direction of a paper P, when reading an image on the paper P fed into it by an image-reading unit comprising scanner heads 7a and 7b, in order to embrace the paper P entirely within the scanning area even when the paper P passes the image-reading unit while in a skew orientation, thereby enabling the apparatus to read the image without any defect, including the image in a marginal portion of the paper P.

Abstract: A method for the fabrication of a cap layer on a top electrode layer of a ferroelectric capacitor includes the steps of depositing an amorphous layer, usually made of Sr(x)Ru(y)O3, on the top electrode and then annealing the amorphous layer in two stages in order convert the amorphous layer into the cap layer. The first anneal is performed at 500° C. to 700° C. in a non-oxidizing atmosphere, such as nitrogen, and converts the amorphous layer into a crystallized layer of Sr(x)Ru(y)O3. The second anneal is performed at 300° C. to 500° C. in an oxidizing atmosphere, such as oxygen, and converts the crystallized layer into the cap layer. The method is applied to the formation of a ferroelectric capacitor element of an integrated semiconductor device.

Abstract: A ferroelectric random access memory has a ferroelectric capacitor formed of a stacking of a lower electrode, a PZT film and an upper electrode of SrRuO3, wherein the PZT film includes pinholes, with a pinhole density of about 17 &mgr;m2 or less.

Abstract: There are provided a first insulating film formed over a semiconductor substrate, actual operating capacitors formed on the first insulating film in a memory cell region vertically and horizontally, dummy capacitors formed selectively at four corners of the memory cell region, and a second insulating film formed on the actual operating capacitors and the dummy capacitors.

Abstract: A ferroelectric random access memory has a ferroelectric capacitor formed of a stacking of a lower electrode, a PZT film and an upper electrode of SrRuO3, wherein the PZT film includes pinholes, with a pinhole density of about 17/&mgr;m2 or less.

Abstract: A semiconductor device having conductive plug for connecting capacitor and conductive pattern, comprises first and second impurity diffusion regions formed in a semiconductor substrate, a first insulating film formed over the semiconductor substrate, a first hole formed in the first insulating film on the first impurity diffusion region, a first conductive plug formed in the first hole and made of a metal film, a second hole formed in the first insulating film on the second impurity diffusion region, a second conductive plug formed in the second hole and made of conductive material that is hard to be oxidized rather than the metal film, and a capacitor that consists of a lower electrode connected to an upper surface of the second conductive plug, a dielectric film, and an upper electrode.

Abstract: There are provided the steps of forming contact holes in the insulating film, that covers the source/drain of the MOSFET and the capacitor in the memory cell region, on the lower electrode of the capacitor by the same steps, then filling the plugs into the contact holes, and then forming the contact hole on the upper electrode of the capacitor. Accordingly, there can be provided the semiconductor device having the ferroelectric capacitor, capable of simplifying respective wiring connection structures to the upper electrode and the lower electrode of the capacitor by suppressing the damage to the capacitor formed over the transistor.

Abstract: A semiconductor device formed by forming contact holes in the insulating film, that covers the source/drain of the MOSFET and the capacitor in the memory cell region, on the lower electrode of the capacitor by the same steps, then filling the plugs into the contact holes, and then forming the contact hole on the upper electrode of the capacitor. Accordingly, there can be provided the semiconductor device having the ferroelectric capacitor, capable of simplifying respective wiring connection structures to the upper electrode and the lower electrode of the capacitor by suppressing the damage to the capacitor formed over the transistor.