Abstract: A method is for controlling an imaging device that allows switching of an operation mode between a first mode to perform imaging in a first imaging wavelength band and a second mode to perform imaging in a second imaging wavelength band different from the first imaging wavelength band. The method includes: determining whether ambient light includes near-infrared light based on information obtained in the first mode and information obtained in the second mode; and maintaining or changing the operation mode.

Abstract: An imaging device includes: a semiconductor substrate including a pixel region in which pixels are arranged and a peripheral region adjacent to the pixel region; an insulating layer that covers the pixel region and the peripheral region; a first electrode located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrode; a second electrode that covers the photoelectric conversion layer; detection circuitry located in the pixel region and connected to the first electrode; peripheral circuitry located in the peripheral region and connected to the detection circuitry; and a third electrode located on the insulating layer above the peripheral region. The second electrode extends above the peripheral region, and the second electrode includes a connection region in which the second electrode is connected to the third electrode, the connection region overlapping the peripheral circuitry in plan view.

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.

Abstract: A capacitor includes a first electrode, a second electrode facing the first electrode, and a dielectric layer disposed between the first and second electrodes and being in contact with each of the first and second electrodes. The dielectric layer has a thickness of 10 nm or more. The first electrode contains carbon. At the interface between the dielectric layer and the first electrode, an elemental percentage of carbon is 30 atomic % or less.

Abstract: A capacitor includes a first electrode; a second electrode facing the first electrode; and a dielectric layer which is disposed between the first electrode and the second electrode. The dielectric layer is made of at least one selected from the group consisting of a hafnium oxide and a zirconium oxide. A thickness of the dielectric layer is 12 nm or more. The dielectric layer has a monoclinic crystal system structure. A concentration of hydrogen in the dielectric layer is 2.5×1021 atoms/cm3 or less.

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.

Abstract: A three-dimensional motion obtaining apparatus includes: a light source; a charge amount obtaining circuit that includes pixels and obtains, for each of the pixels, a first charge amount under a first exposure pattern and a second charge amount under a second exposure pattern having an exposure period that at least partially overlaps an exposure period of the first exposure pattern; and a processor that controls a light emission pattern for the light source, the first exposure pattern, and the second exposure pattern. The processor estimates a distance to a subject for each of the pixels on the basis of the light emission pattern and on the basis of the first charge amount and the second charge amount of each of the pixels obtained by the charge amount obtaining circuit, and estimates an optical flow for each of the pixels on the basis of the first exposure pattern, the second exposure pattern, and the first charge amount and the second charge amount obtained by the charge amount obtaining circuit.

Abstract: An imaging device includes: a photoelectric converter including first and second electrodes, a photoelectric conversion layer therebetween, and an electron-blocking layer between the first electrode and the photoelectric conversion layer; and a signal detection circuit connected to the first electrode. The photoelectric converter is adapted to be applied with a voltage between the first and second electrodes. An electron-blocking material in the electron-blocking layer has an ionization potential higher than both a work function of a conducting material in the first electrode and an ionization potential of a photoelectric conversion material in the photoelectric conversion layer, which allows the photoelectric converter to have a range of the voltage within which a density of current passing between the first and second electrodes when light is incident on the photoelectric conversion layer is substantially equal to that when no light is incident. The range of the voltage is 0.5 V or more.

Abstract: A photosensor includes a photoelectric converter including first and second electrodes and a photoelectric conversion layer therebetween; a transistor having a gate, a source and a drain; a connector electrically connecting the first electrode and the gate together; and one or more wiring layers including a part of the connector. The transistor outputs an electric signal from one of the source and the drain, the electric signal corresponding to a change in dielectric constant between the first electrode and the second electrode, the change being caused by incident light on the photoelectric conversion layer. The one or more wiring layers include a first line coupled to the one of the source and the drain and a second line supplied with a fixed voltage in a period during operation. A distance between the first line and the connector is less than a distance between the second line and the connector.

Abstract: A method is for controlling an imaging device that allows switching of an operation mode between a first mode to perform imaging in a first imaging wavelength band and a second mode to perform imaging in a second imaging wavelength band different from the first imaging wavelength band. The method includes: determining whether ambient light includes near-infrared light based on information obtained in the first mode and information obtained in the second mode; and maintaining or changing the operation mode.

Abstract: An imaging device of the present disclosure includes: an imaging cell including a photoelectric converter including a first electrode, a second electrode, and a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric converter generating signal charge by photoelectric conversion, and a charge detection circuit connected to the first electrode, the charge detection circuit detecting the signal charge; a signal line electrically coupled to the first electrode; and a voltage supply circuit selectively supplying a first voltage and a second voltage different from the first voltage to the signal line.

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.

Abstract: An imaging device of the present disclosure includes: a first and second imaging cells each including a photoelectric converter including a pixel electrode, an opposite electrode, and a photoelectric conversion layer between the pixel electrode and the opposite electrode, the photoelectric converter generating signal charge by photoelectric conversion, and charge detection circuit connected to the pixel electrode, the charge detection circuit detecting the signal charge; and a voltage supply circuit supplying a voltage such that, in a frame period, a potential difference between the pixel electrode and the opposite electrode of the first imaging cell at a start time of a charge accumulation period of the first imaging cell is made different from a potential difference between the pixel electrode and the opposite electrode of the second imaging cell at a start time of a charge accumulation period of the second imaging cell.

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.

Abstract: A photosensor includes: a first electrode; a second electrode; a photoelectric conversion layer that is located between the first and second electrodes and generates electric charges; a first charge blocking layer located between the first electrode and the photoelectric conversion layer; a second charge blocking layer located between the second electrode and the photoelectric conversion layer; a voltage supply circuit that applies a voltage to at least one of the first and second electrodes such that an electric field is generated in the photoelectric conversion layer; and a detection circuit that detects a signal corresponding to a change in capacitance between the first and second electrodes. The first charge blocking layer suppresses movement of electric charges between the photoelectric conversion layer and the first electrode. The second charge blocking layer suppresses movement of electric charges between the photoelectric conversion layer and the second electrode.

Abstract: A display device of the disclosure includes a projector including optical elements to project images on left or right eye of an observer and a frame connected to the projector for mounting on the observer. With the frame mounted on the observer, at least part of the projector is placed in visual fields of the eyes, and length from tangent point between leftmost one among lines of sight of the left eye overlapping outline of at least the part and the outline to intersection between an imaginary line through the tangent point parallel to direction of pupillary distance of the observer and rightmost one among lines of sight of the right eye overlapping the outline is shorter than the pupillary distance in a top plan view of the display device.

Abstract: An imaging device including: pixel cells each comprising: a photoelectric converter including two electrodes and a photoelectric conversion layer therebetween; a field effect transistor having a gate and a channel region; and a node between the photoelectric converter and the field effect transistor. The field effect transistor outputs an electric signal corresponding to change in dielectric constant between the electrodes, the change being caused by incident light on the photoelectric conversion layer. Cpd1, Cn1, Cpd2 and Cn2 satisfy a relation of Cpd1/Cn1<Cpd2/Cn2 where a capacitance value of a first photoelectric converter in a state of receiving no incident light is Cpd1, a capacitance value between a first node and a first channel region is Cn1, a capacitance value of a second photoelectric converter in a state of receiving no incident light is Cpd2, and a capacitance value between a second node and a second channel region is Cn2.

Abstract: A photosensor includes a photoelectric converter including first and second electrodes and a photoelectric conversion layer therebetween; a transistor having a gate, a source and a drain; a connector electrically connecting the first electrode and the gate together; and one or more wiring layers including a part of the connector. The transistor outputs an electric signal from one of the source and the drain, the electric signal corresponding to a change in dielectric constant between the first electrode and the second electrode, the change being caused by incident light on the photoelectric conversion layer. The one or more wiring layers include a first line coupled to the one of the source and the drain and a second line supplied with a fixed voltage in a period during operation. A distance between the first line and the connector is less than a distance between the second line and the connector.

Abstract: An imaging device including: pixel cells each comprising: a photoelectric converter including two electrodes and a photoelectric conversion layer therebetween; a field effect transistor having a gate and a channel region; and a node between the photoelectric converter and the field effect transistor. The field effect transistor outputs an electric signal corresponding to change in dielectric constant between the electrodes, the change being caused by incident light on the photoelectric conversion layer. Cpd1, Cn1, Cpd2 and Cn2 satisfy a relation of Cpd1/Cn1<Cpd2/Cn2 where a capacitance value of a first photoelectric converter in a state of receiving no incident light is Cpd1, a capacitance value between a first node and a first channel region is Cn1, a capacitance value of a second photoelectric converter in a state of receiving no incident light is Cpd2, and a capacitance value between a second node and a second channel region is Cn2.

Abstract: An image display device according to an aspect of the present disclosure includes: a display including light-emitting elements arrayed two-dimensionally, and having regions, in each of which a part of the light-emitting elements is located; a mirror lens array including mirror lenses, each of the mirror lenses being disposed correspondingly to one of the regions, reflecting light from the regions, and forming virtual images; and a beam splitter disposed between the display and the mirror lens array, the beam splitter transmitting a part of the light from the regions in a direction of the mirror lens array and reflecting a part of reflected light from the mirror lens array.