Abstract: Provided is a nonvolatile memory device that makes it possible to achieve high performance. The nonvolatile memory device includes a first electrode, a memory material layer, a second electrode, and a first buffer layer. The memory material layer includes a first element and is provided on the first electrode. The second electrode is provided on the memory material layer. The first buffer layer is provided between the memory material layer and the second electrode. In the first buffer layer, a segregation of the first element is smaller than a segregation of the first element in the second electrode.

Abstract: A storage device includes a first electrode, a second electrode, and a storage layer. The second electrode is disposed to oppose the first electrode. The storage layer is provided between the first electrode and the second electrode, and includes one or more chalcogen elements selected from tellurium (Te), selenium (Se), and sulfur (S), transition metal, and oxygen. The storage layer has a non-linear resistance characteristic, and the storage layer is caused to be in a low-resistance state by setting an application voltage to be equal to or higher than a predetermined threshold voltage and is caused to be in a high-resistance state by setting the application voltage to be lower than the predetermined threshold voltage to thereby have a rectification characteristic.

Abstract: A disclosed semiconductor device includes a memory cell with a first terminal, a second terminal, a memory element having a first resistance state and a second resistance state, and a nonlinear element, and a drive controller that performs a first operation that allows the memory element to be in the first resistance state, a second operation that allows the memory element to be in the second resistance state, a third operation in which the voltage of the first and second terminals is caused to be different from each other and a value of electric current flowing between the first terminal and the second terminal is caused to be limited to a first current value to determine the resistance state, and a fourth operation in which the current value is caused to be limited to a second current value. The drive controller performs the fourth operation after at least one of the first to third operations.

Abstract: A switch device includes: a first electrode; a second electrode opposed to the first electrode; and a switch layer provided between the first electrode and the second electrode, and the switch layer includes one or more kinds of chalcogen elements selected from tellurium (Te), selenium (Se), and sulfur (S) and one or more kinds of first elements selected from phosphorus (P) and arsenic (As), and further includes one or both of one or more kinds of second elements selected from boron (B) and carbon (C) and one or more kinds of third elements selected from aluminum (Al), gallium (Ga), and indium (In).

Abstract: There is provided a selection device that includes a first electrode, a second electrode opposed to the first electrode, a semiconductor layer provided between the first electrode and the second electrode, and including at least one kind of chalcogen element selected from tellurium (Te), selenium (Se), and sulfur (S), and at least one kind of first element selected from boron (B), aluminum (Al), gallium (Ga), phosphorus (P), arsenic (As), carbon (C), germanium (Ge), and silicon (Si), and a first heat bypass layer provided at least in a portion around the semiconductor layer between the first electrode and the second electrode and having higher thermal conductivity than the semiconductor layer.

Abstract: A disclosed semiconductor device includes a memory cell with a first terminal, a second terminal, a memory element having a first resistance state and a second resistance state, and a nonlinear element, and a drive controller that performs a first operation that allows the memory element to be in the first resistance state, a second operation that allows the memory element to be in the second resistance state, a third operation in which the of of the first and second terminals is caused to be different from each other and a value of electric current flowing between the first terminal and the second terminal is caused to be limited to a first current value to determine the resistance state, and a fourth operation in which the current value is caused to be limited to a second current value. The drive controller performs the fourth operation after at least one of the first to third operations.

Abstract: Provided is a circuit element that includes paired inert electrodes, and a switch layer provided between the paired inert electrodes, that functions as a selection element and a storage element as a single layer, and having a differential negative resistance region in a current-voltage characteristic.

Abstract: A storage device includes a first electrode, a second electrode, and a storage layer. The second electrode is disposed to oppose the first electrode. The storage layer is provided between the first electrode and the second electrode, and includes one or more chalcogen elements selected from tellurium (Te), selenium (Se), and sulfur (S), transition metal, and oxygen. The storage layer has a non-linear resistance characteristic, and the storage layer is caused to be in a low-resistance state by setting an application voltage to be equal to or higher than a predetermined threshold voltage and is caused to be in a high-resistance state by setting the application voltage to be lower than the predetermined threshold voltage to thereby have a rectification characteristic.

Abstract: A switch device according to an embodiment of the technology includes a first electrode, a second electrode that is disposed to face the first electrode, and a switch layer that is provided between the first electrode and the second electrode. The switch layer contains a chalcogen element. The switch layer includes a first region and a second region which have different composition ratios of one or more of chalcogen elements or different types of the one or more of chalcogen elements. The first region is provided close to the first electrode. The second region is provided closer to the second electrode than the first region.

Abstract: A selection device according to an embodiment of the present disclosure includes: a first electrode; a second electrode opposed to the first electrode; a semiconductor layer provided between the first electrode and the second electrode, and including at least one kind of chalcogen element selected from tellurium (Te), selenium (Se), and sulfur (S), and at least one kind of first element selected from boron (B), aluminum (Al), gallium (Ga), phosphorus (P), arsenic (As), carbon (C), germanium (Ge), and silicon (Si); and a first heat bypass layer provided at least in a portion around the semiconductor layer between the first electrode and the second electrode and having higher thermal conductivity than the semiconductor layer.

Abstract: A switch device according to an embodiment of the technology includes a first electrode, a second electrode that is disposed to face the first electrode, and a switch layer that is provided between the first electrode and the second electrode. The switch layer contains a chalcogen element. The switch layer includes a first region and a second region which have different composition ratios of one or more of chalcogen elements or different types of the one or more of chalcogen elements. The first region is provided close to the first electrode. The second region is provided closer to the second electrode than the first region.

Abstract: [Object] To provide a circuit element, a storage device, electronic equipment, a method of writing information into a circuit element, and a method of reading information from a circuit element. [Solution] The circuit element includes: paired inert electrodes; and a switch layer provided between the paired inert electrodes, configured to function as a selection element and a storage element as a single layer, and having a differential negative resistance region in a current-voltage characteristic.

Abstract: A switch device according to an embodiment of the technology includes a first electrode, a second electrode that is disposed to face the first electrode, and a switch layer that is provided between the first electrode and the second electrode. The switch layer contains a chalcogen element. The switch layer includes a first region and a second region which have different composition ratios of one or more of chalcogen elements or different types of the one or more of chalcogen elements. The first region is provided close to the first electrode. The second region is provided closer to the second electrode than the first region.

Abstract: A switch device according to an embodiment of the present disclosure includes: a first electrode; a second electrode opposed to the first electrode; and a switch layer provided between the first electrode and the second electrode, and the switch layer includes one or more kinds of chalcogen elements selected from tellurium (Te), selenium (Se), and sulfur (S) and one or more kinds of first elements selected from phosphorus (P) and arsenic (As), and further includes one or both of one or more kinds of second elements selected from boron (B) and carbon (C) and one or more kinds of third elements selected from aluminum (Al), gallium (Ga), and indium (In).

Abstract: Provided is a storage apparatus provided with a plurality of storage elements having storage layers comprising a plurality of layers and electrodes, one layer among the plurality of layers being extended in a first direction and being shared by the plurality of storage elements disposed in the first direction, the electrodes being extended in a second direction that differs from the first direction and being shared by the plurality of storage elements disposed in the second direction.

Abstract: A switch device according to an embodiment of the technology includes a first electrode, a second electrode that is disposed to face the first electrode, and a switch layer that is provided between the first electrode and the second electrode. The switch layer contains a chalcogen element. The switch layer includes a first region and a second region which have different composition ratios of one or more of chalcogen elements or different types of the one or more of chalcogen elements. The first region is provided close to the first electrode. The second region is provided closer to the second electrode than the first region.

Abstract: A storage device includes: a first electrode; a storage layer including an ion source layer; and a second electrode. The first electrode, the storage layer, and the second electrode are provided in this order. The ion source layer includes a chalcogen element, oxygen, and one or more transition metal elements selected from the group of Groups 4, 5, and 6 elements of the Periodic Table.

Abstract: There is provided a storage unit including: a storage device configured to store a resistance state, the resistance state being changeable between a first state and a second state; and a driving section, when setting the resistance state to the first state, applying a first pulse having a first polarity to the storage device, the driving section, when setting the resistance state to the second state, applying a second pulse having a second polarity to the storage device, then temporarily applying a third pulse having the first polarity, and applying the second pulse again, the first polarity and the second polarity differing from each other.

Abstract: A storage device includes: a first electrode; a storage layer including an ion source layer; and a second electrode. The first electrode, the storage layer, and the second electrode are provided in this order. The ion source layer contains a movable element, and has a volume resistivity of about 150 m?·cm to about 12000 m?·cm both inclusive.

Abstract: A storage device includes: a first electrode; a storage layer including an ion source layer; and a second electrode. The first electrode, the storage layer, and the second electrode are provided in this order. The ion source layer contains a movable element, and has a volume resistivity of about 150 m?·cm to about 12000 m?·cm both inclusive.