Abstract: A semiconductor device comprises at least two semiconductor elements connected together at a connecting region of the semiconductor elements. At least one joint chip is adhered to the connection region of the semiconductor elements for connecting the semiconductor elements together. The joint chip has a trapezoidal cross-section defining a first surface and a second surface wider than the first surface. The second surface of the joint chip is adhered to the connection region of the semiconductor elements.

Abstract: A process for fabricating a semiconductor device which permits the placement of plural semiconductor chip devices at a reduced pitch comprises the steps of bonding a plurality of semiconductor chip devices to a substrate, forming a conductive thin film on the substrate to cover at least connecting regions of the semiconductor chip devices, and patterning the conductive thin film using an excimer laser to form interconnections between the respective semiconductor chip devices. The conductive thin film is formed by a method selected from physical vapor deposition and chemical vapor deposition. The step of bonding the semiconductor chip devices to a substrate is preferably performed using an epoxy-based adhesive. Preferably, an insulating film is formed on the plural semiconductor chip devices in regions except for the connection regions. Patterning of the conductive thin film is performed using an excimer laser beam emitted in two pulses at an output energy of 300 mJ/cm.sup.2.