Abstract: An X-ray generating apparatus provided with at least one deflecting means disposed between a freely selected pair of adjacent deflecting electromagnets and adapted to undulate electrons around a design orbit. When the deflecting means if formed of variable horizontally or vertically deflecting electromagnets capable of forming a variable magnetic field for electron on the orbit, the electrons are undulated around the design orbit and synchrotron radiation or powerful wiggler radiation from a wiggler is generated to irradiate a large area of a given substrate. Thus, in the transfer of patterns for the production of LSI devices for example, the X-ray generating apparatus enables highly intensive X-rays abundantly containing soft X-rays to be emitted uniformly to irradiate a wide area.

Abstract: When the junction field effect transistor is irradiated by ionizing radiations from a radioactive material or a particle accelerator, defect centers are generated in the depletion layer near the channel layer. The defect centers introduce additional electron states in the forbidden gap of the semiconductor and these additional states cause a great increase of the noise voltage in the junction field effect transistor. The amount of ionizing radiations irradiated to the transistor is directly in proportion to the change of the square of the noise voltage caused by the defect centers. On the basis of this relationship, the dose of the irradiated ionizing radiation can be measured by finding the amount of this change in the square of noise voltage before and after irradiation of the ionizing radiation to the transistor.