Patents by Inventor Takkyun RO
Takkyun RO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11711975Abstract: A near-infrared absorber includes a compound represented by Chemical Formula 1. A near-infrared absorbing/blocking film, a photoelectric device, an organic sensor, and an electronic device may include the near-infrared absorber. In Chemical Formula 1, X1, X2, Y1, Y2, Ar, Ar1, and Ar2 are the same as defined in the detailed description.Type: GrantFiled: September 16, 2020Date of Patent: July 25, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Hyesung Choi, Hwang Suk Kim, Ohkyu Kwon, Takkyun Ro, Kwang Hee Lee, Dong-Seok Leem, Bum Woo Park
-
Patent number: 11711930Abstract: A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (?max1) of the first photoelectric conversion layer and a peak absorption wavelength (?max2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.Type: GrantFiled: May 3, 2021Date of Patent: July 25, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Bae Park, Takkyun Ro, Kiyohiko Tsutsumi, Chul Joon Heo, Yong Wan Jin
-
Patent number: 11690542Abstract: Disclosed is a non-invasive biometric sensor including a light source, an organic photodetector, and a detector. The light source is configured to irradiate light in a desired (and/or alternatively predetermined) wavelength range to a body part. The organic photodetector is configured to sense the light in the desired (and/or alternatively predetermined) wavelength range in response to the light in the desired (and/or alternatively predetermined) range being transmitted through the body part. The detector is configured to determine biomedical information of the body part based on an amount of the light sensed by the organic photodetector.Type: GrantFiled: August 28, 2020Date of Patent: July 4, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Chui Joon Heo, Kyung Bae Park, Takkyun Ro, Kwang Hee Lee, Dongseon Lee, Yong Wan Jin, Moon Gyu Han
-
Patent number: 11476423Abstract: A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as described in the detailed description.Type: GrantFiled: January 29, 2021Date of Patent: October 18, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Norihito Ishii, Katsunori Shibata, Takkyun Ro, Ohkyu Kwon, Sang Mo Kim, Kyung Bae Park, Sung Young Yun, Dong-Seok Leem, Youn Hee Lim, Yong Wan Jin, Yeong Suk Choi, Jong Won Choi, Taejin Choi, Hyesung Choi, Chul Joon Heo
-
Patent number: 11456336Abstract: Disclosed are an organic photoelectric device including a first electrode and a second electrode facing each other and a photoelectric conversion layer disposed between the first electrode and the second electrode and selectively absorbing light in a green wavelength region, wherein the photoelectric conversion layer includes a first and second photoelectric conversion materials, a light-absorption full width at half maximum (FWHM) in a green wavelength region of the first photoelectric conversion material is narrower than the light-absorption FWHM in a green wavelength region of the second photoelectric conversion material, and the first and second photoelectric conversion materials satisfy Relationship Equation 1, and an image sensor and an electronic device including the same. Tm2(° C.)?Ts2(10)(° C.)?Tm1(° C.)?Ts1(10)(° C.Type: GrantFiled: September 16, 2020Date of Patent: September 27, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Kiyohiko Tsutsumi, Kyung Bae Park, Takkyun Ro, Chul Joon Heo, Yong Wan Jin
-
Patent number: 11432774Abstract: A pulse oximeter may include a photoelectric conversion device having wavelength selectivity so that a low output LED may be included in the pulse oximeter to prevent skin damage and to reduce power consumption. The pulse oximeter includes a light emitting device configured to emit white light and a sensor configured to detect transmitted light that is received from the light emitting device. The sensor includes a near infrared organic photoelectric conversion device configured to sense a particular near infrared wavelength spectrum of light and a red photoelectric conversion device configured to sense a particular red wavelength spectrum of light.Type: GrantFiled: January 24, 2019Date of Patent: September 6, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Chui Joon Heo, Kyung Bae Park, Dongseon Lee, Moon Gyu Han, Takkyun Ro, Youn Hee Lim, Yong Wan Jin, Kiyohiko Tsutsumi
-
Patent number: 11387278Abstract: An electronic device includes a plurality of pixel electrodes, an active layer on the plurality of pixel electrodes, an opposed electrode on the active layer and covering an entirety of an upper surface of the active layer, and a first encapsulation film on the opposed electrode wherein the opposed electrode and the first encapsulation film have a common planar shapes.Type: GrantFiled: November 28, 2017Date of Patent: July 12, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Chui Joon Heo, Ryuichi Satoh, Kyung Bae Park, Yeon-Hee Kim, Takkyun Ro, Takao Motoyama, Se Hyuck Park
-
Publication number: 20210273186Abstract: A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (?max1) of the first photoelectric conversion layer and a peak absorption wavelength (?max2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.Type: ApplicationFiled: May 3, 2021Publication date: September 2, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Kyung Bae PARK, Takkyun RO, Kiyohiko TSUTSUMI, Chul Joon HEO, Yong Wan JIN
-
Publication number: 20210151686Abstract: A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as described in the detailed description.Type: ApplicationFiled: January 29, 2021Publication date: May 20, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Norihito ISHII, Katsunori SHIBATA, Takkyun RO, Ohkyu KWON, Sang Mo KIM, Kyung Bae PARK, Sung Young YUN, Dong-Seok LEEM, Youn Hee LIM, Yong Wan JIN, Yeong Suk CHOI, Jong Won CHOI, Taejin CHOI, Hyesung CHOI, Chul Joon HEO
-
Patent number: 11005070Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other, and first and second photoelectronic conversion layers between the first electrode and the second electrode. The first and second photoelectronic conversion layers include a p-type semiconductor and an n-type semiconductor. The first photoelectronic conversion layer has a first composition ratio (p1/n1) of the p-type semiconductor relative to the n-type semiconductor, the second photoelectronic conversion layer has a second composition ratio (p2/n2) of the p-type semiconductor relative to the n-type semiconductor, and the first composition ratio (p1/n1) is greater than the second composition ratio (p2/n2).Type: GrantFiled: December 5, 2019Date of Patent: May 11, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Chul Joon Heo, Kyung Bae Park, Sung Young Yun, Tadao Yagi, Takkyun Ro, Gae Hwang Lee, Kwang Hee Lee, Yong Wan Jin
-
Patent number: 11004909Abstract: A photoelectric diode includes a first electrode and a second electrode facing each other; a photoelectric conversion layer between the first electrode and the second electrode, and a compensation layer on the photoelectric conversion layer, the compensation layer being configured to compensate absorption and reflection of light. The photoelectric conversion layer is associated with a first optical spectrum having a light-absorption peak at a first wavelength and a reflection peak at a second wavelength, the first wavelength and the second wavelength both within a wavelength region of about 750 nm to about 1200 nm. The photoelectric diode is associated with a second optical spectrum having a light-absorption peak at a third wavelength, the third wavelength is within the wavelength region of about 750 nm to about 1200 nm, the third wavelength different from the first wavelength.Type: GrantFiled: August 9, 2019Date of Patent: May 11, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Kwang Hee Lee, Takkyun Ro, Dong-Seok Leem, Ohkyu Kwon, Bum Woo Park, Hyesung Choi
-
Patent number: 10998514Abstract: A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (?max1) of the first photoelectric conversion layer and a peak absorption wavelength (?max2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.Type: GrantFiled: November 2, 2018Date of Patent: May 4, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Bae Park, Takkyun Ro, Kiyohiko Tsutsumi, Chul Joon Heo, Yong Wan Jin
-
Patent number: 10964753Abstract: Disclosed is an optoelectronic device including a first electrode and a second electrode facing each other; a metal layer pattern disposed between the first electrode and the second electrode; a buffer layer covering the metal layer pattern; and a photoelectric conversion layer on the buffer layer. The metal layer pattern includes a metal having a negative dielectric constant and the buffer layer includes a compound selected from silicon nitride (SiNx, 0<x<1), silicon oxynitride (SiOyNz, 0<y<0.5, 0<z?1), P-doped silicon oxynitride (SiOyNz:P, 0<y<0.5, 0<z?1), and a combination thereof.Type: GrantFiled: April 30, 2019Date of Patent: March 30, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Sung Heo, Takkyun Ro, Kyung Bae Park, Gyeongsu Park, Joo Ho Lee
-
Publication number: 20210083199Abstract: A near-infrared absorber includes a compound represented by Chemical Formula 1. A near-infrared absorbing/blocking film, a photoelectric device, an organic sensor, and an electronic device may include the near-infrared absorber. In Chemical Formula 1, X1, X2, Y1, Y2, Ar, Ar1, and Ar2 are the same as defined in the detailed description.Type: ApplicationFiled: September 16, 2020Publication date: March 18, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Hyesung CHOI, Hwang Suk KIM, Ohkyu KWON, Takkyun RO, Kwang Hee LEE, Dong-Seok LEEM, Bum Woo PARK
-
Patent number: 10944055Abstract: A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as described in the detailed description.Type: GrantFiled: August 10, 2018Date of Patent: March 9, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Norihito Ishii, Katsunori Shibata, Takkyun Ro, Ohkyu Kwon, Sang Mo Kim, Kyung Bae Park, Sung Young Yun, Dong-Seok Leem, Youn Hee Lim, Yong Wan Jin, Yeong Suk Choi, Jong Won Choi, Taejin Choi, Hyesung Choi, Chul Joon Heo
-
Publication number: 20200411595Abstract: Disclosed are an organic photoelectric device including a first electrode and a second electrode facing each other and a photoelectric conversion layer disposed between the first electrode and the second electrode and selectively absorbing light in a green wavelength region, wherein the photoelectric conversion layer includes a first and second photoelectric conversion materials, a light-absorption full width at half maximum (FWHM) in a green wavelength region of the first photoelectric conversion material is narrower than the light-absorption FWHM in a green wavelength region of the second photoelectric conversion material, and the first and second photoelectric conversion materials satisfy Relationship Equation 1, and an image sensor and an electronic device including the same. Tm2(° C.)?Ts2(10)(° C.)?Tm1(° C.)?Ts1(10)(° C.Type: ApplicationFiled: September 16, 2020Publication date: December 31, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Kiyohiko TSUTSUMI, Kyung Bae PARK, Takkyun RO, Chul Joon HEO, Yong Wan JIN
-
Publication number: 20200390373Abstract: Disclosed is a non-invasive biometric sensor including a light source, an organic photodetector, and a detector. The light source is configured to irradiate light in a desired (and/or alternatively predetermined) wavelength range to a body part. The organic photodetector is configured to sense the light in the desired (and/or alternatively predetermined) wavelength range in response to the light in the desired (and/or alternatively predetermined) range being transmitted through the body part. The detector is configured to determine biomedical information of the body part based on an amount of the light sensed by the organic photodetector.Type: ApplicationFiled: August 28, 2020Publication date: December 17, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Chul Joon HEO, Kyung Bae PARK, Takkyun RO, Kwang Hee LEE, Dongseon LEE, Yong Wan JIN, Moon Gyu HAN
-
Patent number: 10804327Abstract: Disclosed are an organic photoelectric device including a first electrode and a second electrode facing each other and a photoelectric conversion layer disposed between the first electrode and the second electrode and selectively absorbing light in a green wavelength region, wherein the photoelectric conversion layer includes a first and second photoelectric conversion materials, a light-absorption full width at half maximum (FWHM) in a green wavelength region of the first photoelectric conversion material is narrower than the light-absorption FWHM in a green wavelength region of the second photoelectric conversion material, and the first and second photoelectric conversion materials satisfy Relationship Equation 1, and an image sensor and an electronic device including the same. Tm2(° C.)?Ts2(10)(° C.)?Tm1(° C.)?Ts1(10)(° C.Type: GrantFiled: September 20, 2018Date of Patent: October 13, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Kiyohiko Tsutsumi, Kyung Bae Park, Takkyun Ro, Chul Joon Heo, Yong Wan Jin
-
Patent number: 10786186Abstract: Disclosed is a non-invasive biometric sensor including a light source, an organic photodetector, and a detector. The light source is configured to irradiate light in a desired (and/or alternatively predetermined) wavelength range to a body part. The organic photodetector is configured to sense the light in the desired (and/or alternatively predetermined) wavelength range in response to the light in the desired (and/or alternatively predetermined) range being transmitted through the body part. The detector is configured to determine biomedical information of the body part based on an amount of the light sensed by the organic photodetector.Type: GrantFiled: June 29, 2017Date of Patent: September 29, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Chul Joon Heo, Kyung Bae Park, Takkyun Ro, Kwang Hee Lee, Dongseon Lee, Yong Wan Jin, Moon Gyu Han
-
Publication number: 20200235168Abstract: A photoelectric diode includes a first electrode and a second electrode facing each other; a photoelectric conversion layer between the first electrode and the second electrode, and a compensation layer on the photoelectric conversion layer, the compensation layer being configured to compensate absorption and reflection of light. The photoelectric conversion layer is associated with a first optical spectrum having a light-absorption peak at a first wavelength and a reflection peak at a second wavelength, the first wavelength and the second wavelength both within a wavelength region of about 750 nm to about 1200 nm. The photoelectric diode is associated with a second optical spectrum having a light-absorption peak at a third wavelength, the third wavelength is within the wavelength region of about 750 nm to about 1200 nm, the third wavelength different from the first wavelength.Type: ApplicationFiled: August 9, 2019Publication date: July 23, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Kwang Hee LEE, Takkyun RO, Dong-Seok LEEM, Ohkyu KWON, Bum Woo PARK, Hyesung CHOI