Patents by Inventor Taku GOHIRA

Taku GOHIRA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220310361
    Abstract: A substrate processing method includes: (a) providing a substrate including an etching target film and a mask formed on the etching target film and having an opening; (b) forming a first layer containing a nitrogen atom and a hydrogen atom by using a first processing gas, on a side wall of a recess that is formed in the etching target film corresponding to the opening; (c) after (b), modifying the first layer into a second layer by using a second processing gas containing a halogen-containing gas; and (d) after (c), etching the recess by using a third processing gas.
    Type: Application
    Filed: March 25, 2022
    Publication date: September 29, 2022
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Tsukasa HIRAYAMA, Taku GOHIRA
  • Patent number: 11404281
    Abstract: First and second silicon containing films can be etched selectively against each other with high efficiency. A method includes preparing a processing target object within a chamber; etching the first silicon containing film of the processing target object by generating plasma of a processing gas within the chamber in a state that a temperature of the processing target object is set to a first temperature; and etching the second silicon containing film of the processing target object by generating the plasma of the processing gas within the chamber in a state that the temperature of the processing target object is set to a second temperature higher than the first temperature.
    Type: Grant
    Filed: December 16, 2020
    Date of Patent: August 2, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Taku Gohira, Sho Tominaga
  • Patent number: 11342167
    Abstract: A time period for cleaning performed to remove a deposit formed within a chamber main body can be reduced. A plasma processing method including the cleaning of an inside of the chamber main body of a plasma processing apparatus is provided. The method includes etching including a main etching of etching an etching target film of a processing target object placed on a stage in a low temperature by generating plasma of a processing gas containing a fluorocarbon gas and/or a hydrofluorocarbon gas; carrying-out the processing target object from a chamber; and cleaning the inside of the chamber main body by generating plasma of a cleaning gas in a state that a temperature of an electrostatic chuck is set to be high.
    Type: Grant
    Filed: June 24, 2020
    Date of Patent: May 24, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Jin Kudo, Taku Gohira
  • Publication number: 20220059360
    Abstract: An etching method of forming, on a substrate having a base film; a stacked film in which a first film and a second film are alternately stacked on the base film; and a mask on the stacked film, a recess in the stacked film through the mask by using plasma includes preparing the substrate; and etching the stacked film until the recess of the stacked film reaches the base film by plasma formed from a gas containing hydrogen, fluorine and carbon, while maintaining a substrate temperature equal to or less than 15° C.
    Type: Application
    Filed: August 18, 2021
    Publication date: February 24, 2022
    Inventors: Taku Gohira, Michiko Nakaya
  • Publication number: 20220059361
    Abstract: An etching method for providing an etch profile is provided. The etching method includes preparing a substrate in which a laminate film is formed, the laminate film including silicon oxide films and silicon films stacked in alternation. The etching method includes cooling a surface temperature of the substrate to ?40° C. or less. The etching method includes forming a plasma from gas containing hydrogen and fluorine, based on radio frequency power for plasma formation. The etching method includes etching the laminate film with the formed plasma.
    Type: Application
    Filed: August 23, 2021
    Publication date: February 24, 2022
    Inventors: Michiko NAKAYA, Taku GOHIRA, Hyoseok SONG, Masahiro TADOKORO, Kentaro NUMATA, Keita YAEGASHI
  • Patent number: 11251049
    Abstract: In an etching method, a target object temperature is maintained within a range from ?30° C. to 30° C. When a flow rate of an ith fluorocarbon gas in one or multiple fluorocarbon gases is referred to as J(i); a number of fluorine atoms and a number of carbon atoms in the corresponding gas are referred to as M(i) and N(i), respectively; a value calculated by summing J(i)×N(i)/M(i) of all values that i can be is referred to as Ua; a flow rate of a kth hydrogen-containing gas in one or multiple hydrogen-containing gases is referred to as J(k); a number of hydrogen atoms in the corresponding gas is referred to as H(k); and a value calculated by summing J(k)×H(k) of all values that k can be is referred to as Ub, Ua/Ub satisfies a condition of 0.04<Ua/Ub<0.22.
    Type: Grant
    Filed: April 6, 2020
    Date of Patent: February 15, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Taku Gohira, Masahiro Tadokoro
  • Publication number: 20210265135
    Abstract: A method of processing a substrate with plasma includes: coating surfaces of components inside a chamber with a film having conductive properties by turning a first gas containing carbon and hydrogen into plasma inside the chamber; loading the substrate into the chamber; and processing the substrate by turning a second gas into plasma inside the chamber in a state where the surfaces of the components inside the chamber are coated with the film having conductive properties.
    Type: Application
    Filed: February 23, 2021
    Publication date: August 26, 2021
    Inventors: Michiko NAKAYA, Yuya MINOURA, Taku GOHIRA
  • Publication number: 20210104413
    Abstract: First and second silicon containing films can be etched selectively against each other with high efficiency. A method includes preparing a processing target object within a chamber; etching the first silicon containing film of the processing target object by generating plasma of a processing gas within the chamber in a state that a temperature of the processing target object is set to a first temperature; and etching the second silicon containing film of the processing target object by generating the plasma of the processing gas within the chamber in a state that the temperature of the processing target object is set to a second temperature higher than the first temperature.
    Type: Application
    Filed: December 16, 2020
    Publication date: April 8, 2021
    Inventors: Taku Gohira, Sho Tominaga
  • Publication number: 20210035814
    Abstract: A substrate processing method includes preparing a substrate including an etching target film and a mask; etching the etching target film through the mask by plasma; and heat-treating the substrate at a preset temperature after the etching of the etching target film.
    Type: Application
    Filed: July 31, 2020
    Publication date: February 4, 2021
    Inventors: Muneyuki Omi, Taku Gohira, Takahiro Murakami
  • Patent number: 10903084
    Abstract: First and second silicon containing films can be etched selectively against each other with high efficiency. A method includes preparing a processing target object within a chamber; etching the first silicon containing film of the processing target object by generating plasma of a processing gas within the chamber in a state that a temperature of the processing target object is set to a first temperature; and etching the second silicon containing film of the processing target object by generating the plasma of the processing gas within the chamber in a state that the temperature of the processing target object is set to a second temperature higher than the first temperature.
    Type: Grant
    Filed: April 19, 2019
    Date of Patent: January 26, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Taku Gohira, Sho Tominaga
  • Patent number: 10811275
    Abstract: Bending of a hole or a groove formed in a multilayered film including silicon oxide films and silicon nitride films alternately stacked on top of each other is suppressed. A plasma etching method includes a first etching process of etching, by plasma, the multilayered film including the silicon oxide films and the silicon nitride films alternately stacked on top of each other; and a second etching process of etching, by plasma, the multilayered film under a processing condition that an inclination of a portion of an inner sidewall of the hole or the groove, which is formed by the etching of the multilayered film, corresponding to the silicon nitride film with respect to a depth direction of the hole or the groove is reduced.
    Type: Grant
    Filed: February 14, 2019
    Date of Patent: October 20, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Taku Gohira, Yuya Minoura
  • Publication number: 20200321219
    Abstract: In an etching method, a target object temperature is maintained within a range from ?30° C. to 30° C. When a flow rate of an ith fluorocarbon gas in one or multiple fluorocarbon gases is referred to as J(i); a number of fluorine atoms and a number of carbon atoms in the corresponding gas are referred to as M(i) and N(i), respectively; a value calculated by summing J(i)×N(i)/M(i) of all values that i can be is referred to as Ua; a flow rate of a kth hydrogen-containing gas in one or multiple hydrogen-containing gases is referred to as J(k); a number of hydrogen atoms in the corresponding gas is referred to as H(k); and a value calculated by summing J(k)×H(k) of all values that k can be is referred to as Ub, Ua/Ub satisfies a condition of 0.04<Ua/Ub<0.22.
    Type: Application
    Filed: April 6, 2020
    Publication date: October 8, 2020
    Inventors: Taku Gohira, Masahiro Tadokoro
  • Publication number: 20200321200
    Abstract: A time period for cleaning performed to remove a deposit formed within a chamber main body can be reduced. A plasma processing method including the cleaning of an inside of the chamber main body of a plasma processing apparatus is provided. The method includes etching including a main etching of etching an etching target film of a processing target object placed on a stage in a low temperature by generating plasma of a processing gas containing a fluorocarbon gas and/or a hydrofluorocarbon gas; carrying-out the processing target object from a chamber; and cleaning the inside of the chamber main body by generating plasma of a cleaning gas in a state that a temperature of an electrostatic chuck is set to be high.
    Type: Application
    Filed: June 24, 2020
    Publication date: October 8, 2020
    Inventors: Jin Kudo, Taku Gohira
  • Patent number: 10714320
    Abstract: A time period for cleaning performed to remove a deposit formed within a chamber main body can be reduced. A plasma processing method including the cleaning of an inside of the chamber main body of a plasma processing apparatus is provided. The method includes etching including a main etching of etching an etching target film of a processing target object placed on a stage in a low temperature by generating plasma of a processing gas containing a fluorocarbon gas and/or a hydrofluorocarbon gas; carrying-out the processing target object from a chamber; and cleaning the inside of the chamber main body by generating plasma of a cleaning gas in a state that a temperature of an electrostatic chuck is set to be high.
    Type: Grant
    Filed: January 22, 2018
    Date of Patent: July 14, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Jin Kudo, Taku Gohira
  • Patent number: 10714370
    Abstract: A mounting table includes a base and an electrostatic chuck provided on the base. The base has first and second top surface on which the electrostatic chuck and a focus ring are respectively provided. The second top surface is provided below the first top surface. A coolant path in the base has central and peripheral paths extending below the first and second top surfaces, respectively. The peripheral path has a portion extending along a side surface toward the first top surface. The mounting surface has central and peripheral regions. The mounting surface has protrusions formed in a dot shape. The protrusions are formed such that a contact area between the protrusions of the peripheral region and the backside of an object per unit area becomes greater than a contact area between the protrusions of the central region and the backside of the object per unit area.
    Type: Grant
    Filed: February 27, 2014
    Date of Patent: July 14, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Taketoshi Tomioka, Taku Gohira, Toshiyuki Makabe
  • Patent number: 10410877
    Abstract: An etching method for etching a silicon oxide film is provided that includes generating a plasma from a gas including a hydrogen-containing gas and a fluorine-containing gas using a high frequency power for plasma generation, and etching the silicon oxide film using the generated plasma. The fluorine-containing gas includes a hydrofluorocarbon gas, and the sticking coefficient of radicals generated from the hydrofluorocarbon gas is higher than the sticking coefficient of radicals generated from carbon tetrafluoride (CF4).
    Type: Grant
    Filed: December 14, 2016
    Date of Patent: September 10, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Ryuichi Takashima, Taku Gohira, Yoshinobu Ooya
  • Publication number: 20190252203
    Abstract: Bending of a hole or a groove formed in a multilayered film including silicon oxide films and silicon nitride films alternately stacked on top of each other is suppressed. A plasma etching method includes a first etching process of etching, by plasma, the multilayered film including the silicon oxide films and the silicon nitride films alternately stacked on top of each other; and a second etching process of etching, by plasma, the multilayered film under a processing condition that an inclination of a portion of an inner sidewall of the hole or the groove, which is formed by the etching of the multilayered film, corresponding to the silicon nitride film with respect to a depth direction of the hole or the groove is reduced.
    Type: Application
    Filed: February 14, 2019
    Publication date: August 15, 2019
    Inventors: Taku Gohira, Yuya Minoura
  • Publication number: 20190244829
    Abstract: First and second silicon containing films can be etched selectively against each other with high efficiency. A method includes preparing a processing target object within a chamber; etching the first silicon containing film of the processing target object by generating plasma of a processing gas within the chamber in a state that a temperature of the processing target object is set to a first temperature; and etching the second silicon containing film of the processing target object by generating the plasma of the processing gas within the chamber in a state that the temperature of the processing target object is set to a second temperature higher than the first temperature.
    Type: Application
    Filed: April 19, 2019
    Publication date: August 8, 2019
    Inventors: Taku Gohira, Sho Tominaga
  • Patent number: 10361070
    Abstract: A deposit on a target object can be removed or the amount thereof can be reduced after plasma etching is completed and before the target object is carried out of a chamber. A method of processing the target object is provided. The method includes etching including a main etching of etching an etching target film of the target object placed on a stage at a low temperature by generating plasma of a processing gas containing a fluorocarbon gas and/or a hydrofluorocarbon gas; raising, immediately after the etching is performed or immediately after the main etching is performed, a temperature of an electrostatic chuck; and carrying-out the target object from the chamber in a state that the temperature of the electrostatic chuck is set to a high temperature.
    Type: Grant
    Filed: January 22, 2018
    Date of Patent: July 23, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Taku Gohira, Jin Kudo
  • Patent number: 10304691
    Abstract: Silicon oxide and silicon nitride can be etched selectively against each other with high efficiency. A method includes preparing a processing target object within a chamber; etching the silicon oxide of the processing target object by generating plasma of a processing gas containing carbon, hydrogen and fluorine within the chamber in a state that a temperature of the processing target object is set to a first temperature; and etching the silicon nitride of the processing target object by generating the plasma of the processing gas containing carbon, hydrogen and fluorine within the chamber in a state that the temperature of the processing target object is set to a second temperature higher than the first temperature.
    Type: Grant
    Filed: September 13, 2017
    Date of Patent: May 28, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Taku Gohira, Sho Tominaga