Abstract: In order to execute stable processing by suppressing plasma diffusion and non-stationary discharge generation, there is provided a plasma processing device which includes a processing chamber in which a sample stage is provided for placing a sample thereon, an exhaust unit for evacuating the processing chamber, a magnetic field forming mechanism for forming a magnetic field in the processing chamber, and a power supply unit that supplies radio frequency power for generating plasma to the inside of the processing chamber evacuated by the exhaust unit and has the magnetic field formed by the magnetic field forming mechanism. The processing chamber includes a shielding section which divides an inner part of the processing chamber into a first area at a side for supplying the radio frequency power from the power supply unit and a second area at a side where the sample stage is disposed.

Abstract: In order to implement a plasma etching method for improving a tapered shape, a plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma processing; a first radio frequency power source that supplies radio frequency power for generating a plasma; a sample stage on which the sample is placed; a second radio frequency power source that supplies radio frequency power to the sample stage; and a control unit that controls the first radio frequency power source and the second radio frequency power source so as to etch a stacked film formed by alternately stacking a silicon oxide film and a polycrystalline silicon, or a stacked film formed by alternately stacking a silicon oxide film and a silicon nitride film, by using a plasma generated by a mixed gas of a hydrogen bromide gas, a hydrofluorocarbon gas and a nitrogen element-containing gas.

Abstract: An object of the invention is to provide a plasma processing apparatus capable of both isotropic etching in which a flux of ions to a sample is reduced and anisotropic etching in which ions are incident on a sample in the same chamber.

Abstract: Provided is an indoor unit of an air-conditioner including: an indoor unit body configured to be provided in a ceiling; a suction port attached to a lower surface of the indoor unit body; a panel including a blow port for blowing conditioned air into a room; and a louver provided at the blow port of the panel to change an air sending direction. The panel includes an outer frame provided outside the blow port and provided with a substantially horizontal flat portion, and a protruding portion provided on the flat portion of the outer frame and protruding vertically downward. A lower end of the protruding portion is positioned vertically above a lower end of the louver. A lower end of an inner flow path wall surface forming a flow path wall surface inside the blow port is positioned vertically below the lower end of the louver.

Abstract: A plasma processing apparatus includes a sample stage on which a sample is placed an inside of the processing chamber; a dielectric membrane forming an upper surface portion of the sample stage; a plurality of film-shaped electrodes which is disposed in the dielectric membrane, to which a DC power from a DC power supply is supplied and in which an electrostatic force for attracting the sample is formed; and a bias electrode (ESC base metal) disposed below the dielectric membrane and supplied with radio frequency power for forming a radio frequency bias potential from a radio frequency power supply during the processing of the sample.

Abstract: Disclosed herein is a plasma processing apparatus including: a processing chamber in which a sample is to be processed using plasma; a radio-frequency power source that supplies radio-frequency power for producing the plasma; and a sample stage on which the sample is to be mounted, the plasma processing apparatus further including a control unit that performs control so that plasma is produced after applying a DC voltage for electrostatically attracting the sample to the sample stage to each of two electrodes placed on the sample stage, and a heat-transfer gas for adjusting a temperature of the sample is supplied to a back surface of the sample after production of the plasma.

Abstract: In order to be able to independently control a plasma density distribution both in a distribution with high center and a nodal distribution, and perform a plasma processing on a sample with higher accuracy for processing uniformity, a plasma processing apparatus includes: a vacuum vessel in which a plasma processing is performed on a sample; a radio frequency power source configured to supply radio frequency power for generating plasma; a sample stage on which the sample is placed; and a magnetic field forming unit configured to form a magnetic field inside the vacuum vessel and disposed outside the vacuum vessel, in which the magnetic field forming unit includes: a first coil; a second coil that is disposed closer to an inner side than the first coil and has a diameter smaller than a diameter of the first coil; a first yoke that covers the first coil, and an upper side and a side surface of the vacuum vessel, and in which the first coil is disposed; and a second yoke that covers the second coil along a perip

Abstract: In order to implement a plasma etching method for improving a tapered shape, a plasma processing apparatus includes: a processing chamber in which a sample is subjected to plasma processing; a first radio frequency power source that supplies radio frequency power for generating a plasma; a sample stage on which the sample is placed; a second radio frequency power source that supplies radio frequency power to the sample stage; and a control unit that controls the first radio frequency power source and the second radio frequency power source so as to etch a stacked film formed by alternately stacking a silicon oxide film and a polycrystalline silicon, or a stacked film formed by alternately stacking a silicon oxide film and a silicon nitride film, by using a plasma generated by a mixed gas of a hydrogen bromide gas, a hydrofluorocarbon gas and a nitrogen element-containing gas.

Abstract: Provided is an indoor unit of an air-conditioner including: an indoor unit body configured to be provided in a ceiling; a suction port attached to a lower surface of the indoor unit body; a panel including a blow port for blowing conditioned air into a room; and a louver provided at the blow port of the panel to change an air sending direction. The panel includes an outer frame provided outside the blow port and provided with a substantially horizontal flat portion, and a protruding portion provided on the flat portion of the outer frame and protruding vertically downward. A lower end of the protruding portion is positioned vertically above a lower end of the louver. A lower end of an inner flow path wall surface forming a flow path wall surface inside the blow port is positioned vertically below the lower end of the louver.

Abstract: A plasma processing apparatus includes a sample stage on which a sample is placed an inside of the processing chamber; a dielectric membrane forming an upper surface portion of the sample stage; a plurality of film-shaped electrodes which is disposed in the dielectric membrane, to which a DC power from a DC power supply is supplied and in which an electrostatic force for attracting the sample is formed; and a bias electrode (ESC base metal) disposed below the dielectric membrane and supplied with radio frequency power for forming a radio frequency bias potential from a radio frequency power supply during the processing of the sample.

Abstract: A plasma processing apparatus improves uniformity of a plasma in a radial direction, generation efficiency of plasma, and a yield of a process, and the apparatus includes a sample stage which includes a dielectric susceptor ring located surrounding a top surface of the sample stage on an outer peripheral and a dielectric lower ring-shaped plate located at a position lower than a top surface of the susceptor ring on its outer peripheral side. A difference in height between the top surfaces of the lower ring-shaped plate and the sample is set in a range of around 5 mm of a value found by a formula using a distance: G [mm] between the upper and the lower electrodes, a frequency: f [MHz] of a first high-frequency power, and a pressure: P [Pa] in the processing chamber, and ?0.1×G?0.06×f?4.4×ln(P)+22.

Abstract: A plasma processing apparatus includes: a processing room disposed inside a vacuum chamber; a sample stage disposed inside the processing room, having an upper surface on which a wafer to be processed is to be mounted; a dielectric discoid member opposed to the upper surface of the sample stage in an upper part of the processing room; a discoid upper electrode disposed having a side covered with the discoid member, the side facing the sample stage, the discoid upper electrode being to be supplied with first radio-frequency power for forming an electric field for forming plasma in the processing room; a coil disposed circumferentially above the processing room outside the vacuum chamber, the coil being configured to generate a magnetic field for forming the plasma; and a lower electrode disposed inside the sample stage, the lower electrode being to be supplied with second radio-frequency power for forming a bias potential on the wafer mounted on the sample stage.

Abstract: The present invention provides a plasma processing method and a plasma processing apparatus. The plasma processing method enables consistent processing by realizing a high selectivity and a high etching rate when etching a laminated film using a boron-containing amorphous carbon film, realizes high throughput including prior and post processes by simplifying a mask forming process, and has shape controllability of vertical processing. In the present invention, in a plasma processing method for forming a mask by plasma-etching a laminated film including an amorphous carbon film containing boron, the boron-containing amorphous carbon film is plasma-etched by using a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrafluoride gas, or a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrachloride gas.

Abstract: A plasma processing method for plasma-etching a sample in a metallic processing chamber includes etching the sample with a plasma; plasma-cleaning the processing chamber with a fluorine-containing gas after etching the sample; and plasma-processing the processing chamber with a gas containing sulfur and oxygen after plasma cleaning the processing chamber.

Abstract: A plasma processing method for plasma-etching a sample in a metallic processing chamber includes etching the sample with a plasma; plasma-cleaning the processing chamber with a fluorine-containing gas after etching the sample; and plasma-processing the processing chamber with a gas containing sulfur and oxygen after plasma cleaning the processing chamber.

Abstract: The present invention provides a plasma processing method and a plasma processing apparatus. The plasma processing method enables consistent processing by realizing a high selectivity and a high etching rate when etching a laminated film using a boron-containing amorphous carbon film, realizes high throughput including prior and post processes by simplifying a mask forming process, and has shape controllability of vertical processing. In the present invention, in a plasma processing method for forming a mask by plasma-etching a laminated film including an amorphous carbon film containing boron, the boron-containing amorphous carbon film is plasma-etched by using a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrafluoride gas, or a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrachloride gas.

Abstract: Disclosed herein is a plasma processing apparatus including: a processing chamber in which a sample is to be processed using plasma; a radio-frequency power source that supplies radio-frequency power for producing the plasma; and a sample stage on which the sample is to be mounted, the plasma processing apparatus further including a control unit that performs control so that plasma is produced after applying a DC voltage for electrostatically attracting the sample to the sample stage to each of two electrodes placed on the sample stage, and a heat-transfer gas for adjusting a temperature of the sample is supplied to a back surface of the sample after production of the plasma.

Abstract: An indoor unit of an air conditioner of the present invention includes a cabinet; an air inlet through which air is sucked into the cabinet; a centrifugal fan which blows the air sucked in to the surrounding portions; and an a heat exchanger which is provided in the direction of air supply of the centrifugal fan and allows heat exchange between the air and a refrigerant flowing thereinside, in which the following equation is satisfied: 0.16?L/D?0.19, where D is an outer diameter of the centrifugal fan and L is a distance between the centrifugal fan and the heat exchanger in their closest positions. Thus, a variation in a velocity distribution created in the heat exchanger can be suppressed, and the indoor unit of the air conditioner which achieves an improved energy saving property due to a reduced pressure loss and an improved heat exchange efficiency of the heat exchanger can be provided.