Abstract: The object of the present invention is to provide the dielectric composition having good specific permittivity, high DC breakdown voltage and AC breakdown voltage, small dielectric loss and heat generating property, and good temperature property even though lead is not substantially used. A dielectric composition of the first aspect includes a, Ca, Bi, Ti, and Sr, wherein the dielectric composition includes two phases having different Sr characteristic X ray intensities when a characteristic X ray intensity derived from Sr is measured by EPMA, and when Sr1 represents the characteristic X ray intensity derived from Sr of a first phase measured by EPMA and Sr2 represents the characteristic X ray intensity derived from Sr of a second phase measured by EPMA, a ratio (Sr2/Sr1) of Sr2 with respect to Sr1 satisfies 2 or larger.

Abstract: The object of the present invention is to provide the dielectric composition having good specific permittivity, high DC breakdown voltage and AC breakdown voltage, small dielectric loss and heat generating property, and good temperature property even though lead is not substantially used. A dielectric composition of the first aspect includes a, Ca, Bi, Ti, and Sr, wherein the dielectric composition includes two phases having different Sr characteristic X ray intensities when a characteristic X ray intensity derived from Sr is measured by EPMA, and when Sr1 represents the characteristic X ray intensity derived from Sr of a first phase measured by EPMA and Sr2 represents the characteristic X ray intensity derived from Sr of a second phase measured by EPMA, a ratio (Sr2/Sr1) of Sr2 with respect to Sr1 satisfies 2 or larger.

Abstract: A composite piezoelectric ceramic includes a compact of crystal particles including at least one of potassium niobate (KNbO3) and sodium niobate (NaNbO3) and optionally further including lithium niobate (LiNbO3), and a layer containing barium titanate (BaTiO3) that is disposed on the surface of the compact while forming a heterojunction with the compact. A piezoelectric device includes the composite piezoelectric ceramic.

Abstract: The present invention aims to provide a piezoelectric composition and a piezoelectric element. In the piezoelectric composition, the main component is represented by the following formula with a perovskite type structure, (Bi(0.5x+y+z)Na0.5x)m(Ti(x+0.5y)Mg0.5yMez)O3 wherein, 0.05?x?0.7, 0.01?y?0.7, 0.01?z?0.6, 0.75?m?1.0, x+y+z=1 and the transition metal element Me is any one or more selected from the group consisting of Mn, Cr, Fe and Co.

Abstract: The present invention aims to provide an excellent piezoelectric composition and an excellent piezoelectric element if the piezoelectric properties especially a high spontaneous polarization and a sufficiently high resistivity, the low pollution, the environment and the ecology are considered. In the piezoelectric composition, the main component contains the substance represented by the following formula with a perovskite-typed structure, (Bi(0.5x+y+z)Na0.5x)m(Tix+0.5yMg0.5yAlz)O3. Wherein, 0.01?x?0.8, 0.2?y?0.8, 0.01?z?0.6, 0.75?m?1.0, and x+y+z=1.

Abstract: Provided is a piezoelectric composition containing a major component that is a perovskite-type oxide which is represented by the general formula ABO3, which contains no Pb, and which has A-sites containing Bi, Na, and K and B-sites containing Ti. The Ti is partly substituted with a transition metal element Me that is at least one selected from the group consisting of Mn, Cr, Fe, and Co. The content of Bi and the transition metal element Me in the perovskite-type oxide, which is the major component, is 6 mole percent to 43 mole percent in terms of Biu1MeO3.

Abstract: A novel ceramic composition having a high relative dielectric constant. A ceramic composition includes a unit cell having at least two crystal structures selected from the group made of a monoclinic crystal, a tetragonal crystal, an orthorhombic crystal, and a rhombohedral crystal, characterized in that when the crystal structures are represented by the symmetry notation according to the Glazer method, namely xn1yn2zn3, n1, n2, and n3 are at least one selected from the group made of + and ?, or at least two selected from the group made of 0, +, and ?. By using this ceramic composition, a novel ceramic composition having a high relative dielectric constant can be obtained.

Abstract: The present invention aims to provide a piezoelectric composition and a piezoelectric element containing the piezoelectric composition. In the piezoelectric composition, the main component contains a substance represented by the following formula with a perovskite structure, (Bi(0.5x+y+z)Na0.5x)m(Ti(x+0.5y)Mg0.5yAlkzCo(1?k)z)O3 0.15?x?0.7, 0.28?y?0.75, 0.02?z?0.30, 0.17?k?0.83, 0.75?m?1.0, and x+y+z=1.

Abstract: Provided is a piezoelectric composition containing a major component that is a perovskite-type oxide which is represented by the general formula ABO3, which contains no Pb, and which has A-sites containing Bi, Na, and K and B-sites containing Ti. The Ti is partly substituted with a transition metal element Me that is at least one selected from the group consisting of Mn, Cr, Fe, and Co. The content of Bi and the transition metal element Me in the perovskite-type oxide, which is the major component, is 6 mole percent to 43 mole percent in terms of Biu1MeO3.

Abstract: A piezoelectric device includes a first electrode film, a piezoelectric film disposed on the first electrode film, and a second electrode film disposed on the piezoelectric film. At least one of the first and second electrode films is composed of an alloy, and a main component of the alloy is a metal selected from the group consisting of Ti, Al, Mg, and Zn. The piezoelectric film has a main composition represented by (K1-x-y-w-vNaxLiyBawSrv)m(Nb1-z-uTazZru)O3 (1), where x, y, z, w, v, u, and m in formula (1) satisfy 0.4<x?0.7, 0.02?y?0.11, 0.5?x+y<0.75, 0<z?0.28, 0<w?0.02, 0.02?v?0.11, 0.02?u?0.11, and 0.95?m<1.2, and contains 1% by mass or less of MnO relative to the main composition.

Abstract: A novel ceramic composition having a high relative dielectric constant. A ceramic composition includes a unit cell having at least two crystal structures selected from the group made of a monoclinic crystal, a tetragonal crystal, an orthorhombic crystal, and a rhombohedral crystal, characterized in that when the crystal structures are represented by the symmetry notation according to the Glazer method, namely xn1yn2zn3, n1, n2, and n3 are at least one selected from the group made of + and ?, or at least two selected from the group made of 0, +, and ?. By using this ceramic composition, a novel ceramic composition having a high relative dielectric constant can be obtained.

Abstract: The present invention aims to provide a piezoelectric composition and a piezoelectric element containing the piezoelectric composition. In the piezoelectric composition, the main component contains a substance represented by the following formula with a perovskite structure, (Bi(0.5x+y+z)Na0.5x)m(Ti(x+0.5y)Mg0.5yAlkzCo(1?k)z)O3 0.15?x?0.7, 0.28?y?0.75, 0.02?z?0.30, 0.17?k?0.83, 0.75?m?1.0, and x+y+z=1.

Abstract: A composite piezoelectric ceramic includes a compact of crystal particles including at least one of potassium niobate (KNbO3) and sodium niobate (NaNbO3) and optionally further including lithium niobate (LiNbO3), and a layer containing barium titanate (BaTiO3) that is disposed on the surface of the compact while forming a heterojunction with the compact. A piezoelectric device includes the composite piezoelectric ceramic.

Abstract: The present invention aims to provide a piezoelectric composition and a piezoelectric element. In the piezoelectric composition, the main component is represented by the following formula with a perovskite type structure, (Bi(0.5x+y+z)Na0.5x)m(Ti(x+0.5y)Mg0.5yMez)O3 wherein, 0.05?x?0.7, 0.01?y?0.7, 0.01?z?0.6, 0.75?m?1.0, x+y+z=1 and the transition metal element Me is any one or more selected from the group consisting of Mn, Cr, Fe and Co.

Abstract: The present invention aims to provide an excellent piezoelectric composition and an excellent piezoelectric element if the piezoelectric properties especially a high spontaneous polarization and a sufficiently high resistivity, the low pollution, the environment and the ecology are considered. In the piezoelectric composition, the main component contains the substance represented by the following formula with a perovskite-typed structure, (Bi(0.5x+y+z)Na0.5x)m(Tix+0.5yMg0.5yAlz)O3. Wherein, 0.01?x?0.8, 0.2?y?0.8, 0.01?z?0.6, 0.75?m?1.

Abstract: A piezoelectric compound having no occurrence of segregation or uneven structures as well as a piezoelectric element having excellent piezoelectric properties. The piezoelectric composition includes a main component that is a perovskite-typed oxide represented by formula of ABO3, wherein, one site includes Bi, Na, and another site includes Ti, and part of the Ti is substituted by transition metal element Me (Me is at least one element selected from the group consisting of Mn, Cr, Fe and Co), according to the conversion of BiMeO3, the content ratio of Bi and the transition metal element Me accounts for 6˜43 mol % relative to the whole perovskite-typed oxides as the main component.

Abstract: A piezoelectric device includes a first electrode film, a piezoelectric film disposed on the first electrode film, and a second electrode film disposed on the piezoelectric film. At least one of the first and second electrode films is composed of an alloy, and a main component of the alloy is a metal selected from the group consisting of Ti, Al, Mg, and Zn. The piezoelectric film has a main composition represented by (K1-x-y-w-vNaxLiyBawSrv)m(Nb1-z-uTazZru)O3 (1), where x, y, z, w, v, u, and m in formula (1) satisfy 0.4<x?0.7, 0.02?y?0.11, 0.5?x+y<0.75, 0<z?0.28, 0<w?0.02, 0.02?v?0.11, 0.02?u?0.11, and 0.95?m<1.2, and contains 1% by mass or less of MnO relative to the main composition.

Abstract: A piezoelectric ceramic contains a major proportion of potassium sodium niobate and has a carbon content after firing of 55 to 1,240 ppm by mass.

Abstract: A thin film magnetic device is provided, in which magnetic permeability in a high frequency range can be easily improved. Scratch-like grooves extending along an extending direction of a coil (for example, a Y-axis direction being an extending direction of a second coil part) are formed at least one side of a surface and a back of each of a lower magnetic film and an upper magnetic film. A magnetization direction of anisotropic magnetization is controlled in each of formation areas of the scratch-like grooves (formation areas of lower magnetic films and upper magnetic films), and therefore displacement (rotation) of the magnetization direction of the anisotropic magnetization is pinned by the scratch-like grooves. Consequently, certain magnetic permeability is kept even in a high frequency range. Moreover, such formation of the scratch-like grooves may not cause complexity in manufacturing process.

Abstract: A circuit element comprises a wiring board; the wiring board comprises a substrate and a wiring formed on the substrate, and a lid joined on the substrate containing a part of the wiring with a binder and making a sealed space above the substrate, wherein if a spot of the wiring joined with the lid by a binder is a spot of junction, a flank of both flanks of the wiring comprise bends in the spot of junction.