Patents by Inventor Taku MIZUKAMI

Taku MIZUKAMI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device including insulated gate bipolar transistor element and freewheeling diode element
    Patent number: 11217580
    Abstract: A semiconductor device includes a single semiconductor substrate on which an IGBT region including an IGBT element and an FWD region including a FWD element are formed. In the semiconductor device, a cathode layer is formed with a carrier injection layer, which is electrically connected to a second electrode and has a PN junction with a field stop layer. When a first carrier in the FWD element passes through the field stop layer on the carrier injection layer and flows into the cathode layer in a situation where a forward-biased current is cut off from a state in which the forward-biased current is flowing through the FWD element, a second carrier is injected from the second electrode into a drift layer through the carrier injection layer.
    Type: Grant
    Filed: November 13, 2018
    Date of Patent: January 4, 2022
    Assignee: DENSO CORPORATION
    Inventor: Taku Mizukami
  • SEMICONDUCTOR DEVICE
    Publication number: 20190081163
    Abstract: A semiconductor device includes a single semiconductor substrate on which an IGBT region including an IGBT element and an FWD region including a FWD element are formed. In the semiconductor device, a cathode layer is formed with a carrier injection layer, which is electrically connected to a second electrode and has a PN junction with a field stop layer. When a first carrier in the FWD element passes through the field stop layer on the carrier injection layer and flows into the cathode layer in a situation where a forward-biased current is cut off from a state in which the forward-biased current is flowing through the FWD element, a second carrier is injected from the second electrode into a drift layer through the carrier injection layer.
    Type: Application
    Filed: November 13, 2018
    Publication date: March 14, 2019
    Inventor: Taku MIZUKAMI