Abstract: A positive resist composition includes a resin (A) that increases alkali solubility due to action of an acid, wherein the resin comprises a copolymer containing a first structural unit (a1) derived from hydroxystyrene, and a second structural unit (a2) derived from a (meth)acrylate with an alcoholic hydroxyl group, and a weight average molecular weight of the copolymer is within a range from 2000 to 8500, and 10 mol % to 25 mol % of a combined total of hydroxyl groups within the structural units (a1) and alcoholic hydroxyl groups within the structural units (a2) are protected with acid dissociable, dissolution inhibiting groups, an acid generator (B) that generates an acid on exposure to light, and polypropylene glycol (C).

Abstract: A positive resist composition includes a resin component (A) whose alkaline solubility changes by an action of an acid, an acid generator component (B), and polypropylene glycol, wherein the component (A) includes a resin component (A1) including a constitutional unit (a1) represented by general formula (I), a constitutional unit (a2) represented by general formula (II), and a constitutional unit (a3) having an acid dissociable dissolution inhibiting group, wherein R represents a hydrogen atom or a methyl group, and m represents an integer of 1 to 3, wherein R represents a hydrogen atom or a methyl group, and R1 represents alkyl group having a carbon number of 1 to 5, and l represents an integer of 0 to 3.

Abstract: Disclosed is a method for decreasing the surface defects of a patterned photoresist layer on a substrate surface obtained by the procedure comprising the steps of (a) forming a photoresist layer of a positive-working chemical-amplification photoresist composition on the substrate surface, (b) patternwise exposing the photoresist layer to actinic rays, (c) subjecting the patternwise-exposed photoresist layer to a post-exposure baking treatment and (d) a development treatment. The improvement can be accomplished by bringing the photoresist layer after the post-exposure baking treatment into contact with an aqueous acidic solution having a pH of 3.5 or lower for 1 to 90 seconds. The acid contained in the aqueous acidic solution is preferably an aromatic sulfonic acid or, more preferably, a diphenyl ether sulfonic acid such as dodecyl(diphenyl ether) disulfonic acids.

Abstract: A positive resist composition includes a resin component (A) whose alkaline solubility changes by an action of an acid, an acid generator component (B), and polypropylene glycol, wherein the component (A) includes a resin component (A1) including a constitutional unit (a1) represented by general formula (I), a constitutional unit (a2) represented by general formula (II), and a constitutional unit (a3) having an acid dissociable dissolution inhibiting group, wherein R represents a hydrogen atom or a methyl group, and m represents an integer of 1 to 3, wherein R represents a hydrogen atom or a methyl group, and R1 represents alkyl group having a carbon number of 1 to 5, and 1 represents an integer of 0 to 3.

Abstract: A positive resist composition includes a resin (A) that increases alkali solubility due to action of an acid, wherein the resin comprises a copolymer containing a first structural unit (a1) derived from hydroxystyrene, and a second structural unit (a2) derived from a (meth)acrylate with an alcoholic hydroxyl group, and a weight average molecular weight of the copolymer is within a range from 2000 to 8500, and 10 mol % to 25 mol % of a combined total of hydroxyl groups within the structural units (a1) and alcoholic hydroxyl groups within the structural units (a2) are protected with acid dissociable, dissolution inhibiting groups, an acid generator (B) that generates an acid on exposure to light, and polypropylene glycol (C).

Abstract: Disclosed is a novel chemical-amplification positive-working photoresist composition capable of giving a patterned resist layer with excellent properties such as photosensitivy, pattern resolution, heat resistance and cross sectional profile of the patterned resist layer. The composition is characterized by the use of, as the film-forming resinous component, a hydroxyl-containing resinous ingredient which is a combination of a first resin of which from 30 to 60% of the hydroxyl groups are substituted by acid-dissociable solubility-reducing groups and a second resin of which from 5 to 20% of the hydroxyl groups are substituted by acid-dissociable groups of the same kind as in the first resin in a weight proportion of 1.9 to 9:1.

Abstract: Disclosed is a novel chemical-amplification positive-working photoresist composition capable of giving a patterned resist layer with excellent properties such as photosensitivity, pattern resolution, heat resistance and cross sectional profile of the patterned resist layer. The composition is characterized by the use of, as the film-forming resinous component, a hydroxyl-containing resinous ingredient which is a combination of a first resin of which from 30 to 60% of the hydroxyl groups are substituted by acid-dissociable solubility-reducing groups and a second resin of which from 5 to 20% of the hydroxyl groups are substituted by acid-dissociable groups of the same kind as in the first resin in a weight proportion of 1.9 to 9:1.

Abstract: Disclosed is a method for decreasing the surface defects of a patterned photoresist layer on a substrate surface obtained by the procedure comprising the steps of (a) forming a photoresist layer of a positive-working chemical-amplification photoresist composition on the substrate surface, (b) patternwise exposing the photoresist layer to actinic rays, (c) subjecting the patternwise-exposed photoresist layer to a post-exposure baking treatment and (d) a development treatment. The improvement can be accomplished by bringing the photoresist layer after the post-exposure baking treatment into contact with an aqueous acidic solution having a pH of 3.5 or lower for 1 to 90 seconds. The acid contained in the aqueous acidic solution is preferably an aromatic sulfonic acid or, more preferably, a diphenyl ether sulfonic acid such as dodecyl(diphenyl ether)disulfonic acids.

Abstract: Disclosed is a method for decreasing the surface defects of a patterned photoresist layer on a substrate surface obtained by the procedure comprising the steps of (a) forming a photoresist layer of a positive-working chemical-amplification photoresist composition on the substrate surface, (b) patternwise exposing the photoresist layer to actinic rays, (c) subjecting the patternwise-exposed photoresist layer to a post-exposure baking treatment and (d) a development treatment. The improvement can be accomplished by bringing the photoresist layer after the post-exposure baking treatment into contact with an aqueous acidic solution having a pH of 3.5 or lower for 1 to 90 seconds. The acid contained in the aqueous acidic solution is preferably an aromatic sulfonic acid or, more preferably, a diphenyl ether sulfonic acid such as dodecyl(diphenyl ether) disulfonic acids.

Abstract: Disclosed is a novel chemical-amplification positive-working photoresist composition capable of giving a patterned resist layer with excellent properties such as photosensitivity, pattern resolution, heat resistance and cross sectional profile of the patterned resist layer. The composition is characterized by the use of, as the film-forming resinous component, a hydroxyl-containing resinous ingredient which a combination of a first resin of which from 30 to 60% the hydroxyl groups are substituted by acid-dissociable solubility-reducing groups and a second resin of which from 5 to 20% of the hydroxyl groups are substituted by acid-dissociable groups of the same kind as in the first resin a weight proportion of 1.9 to 9:1.

Abstract: Disclosed is a novel chemical-amplification positive-working photoresist composition capable of giving a patterned resist layer with excellent properties such as photosensitivity, pattern resolution, heat resistance and cross sectional profile of the patterned resist layer. The composition is characterized by the use of, as the film-forming resinous component, a hydroxyl-containing resinous ingredient which is a combination of a first resin of which from 30 to 60% of the hydroxyl groups are substituted by acid-dissociable solubility-reducing groups and a second resin of which from 5 to 20% of the hydroxyl groups are substituted by acid-dissociable groups of the same kind as in the first resin in a weight proportion of 1.9 to 9:1.

Abstract: Disclosed is a method for decreasing the surface defects of a patterned photoresist layer on a substrate surface obtained by the procedure comprising the steps of (a) forming a photoresist layer of a positive-working chemical-amplification photoresist composition on the substrate surface, (b) patternwise exposing the photoresist layer to actinic rays, (c) subjecting the patternwise-exposed photoresist layer to a post-exposure baking treatment and (d) a development treatment. The improvement can be accomplished by bringing the photoresist layer after the post-exposure baking treatment into contact with an aqueous acidic solution having a pH of 3.5 or lower for 1 to 90 seconds. The acid contained in the aqueous acidic solution is preferably an aromatic sulfonic acid or, more preferably, a diphenyl ether sulfonic acid such as dodecyl(diphenyl ether) disulfonic acids.

Abstract: A positive photoresist coating solution comprising (a) an alkali-soluble resin, (b) a quinone diazide group-containing compound, and (c) an organic solvent in an amount sufficient for dissolving said (a) and (b) components, wherein said organic solvent contains (i) propylene glycol monopropyl ether and (ii) 2-heptanone. The solution of the present invention exhibits excellent coating ability, sensitivity, thermostability, focal depth range, shape-profiling ability, and the like.

Abstract: Disclosed is an improved positive-working photoresist composition comprising an alkali-soluble resin as a film-forming agent and a quinone diazide group-containing compound as a photosensitive agent. The most characteristic feature of the inventive composition consists in the unique formulation of the alkali-soluble resin which is a combination of two or three kinds of novolac resins selected from novolac resins (a), (b1) or (b2) and (c1) or (c2), each of which is characterized by the unique formulation of the phenolic compounds as a mixture to be subjected to a condensation reaction with an aldehyde compound to form the novolac resin.

Abstract: An improvement is proposed in a double-coated patterning plate, which consists of a substrate, an undercoat levelling layer and a photoresist layer thereon, as well as in the patterning method therewith. Different from conventional double-coated patterning plate in which the undercoat levelling layer is formed from poly(methyl methacrylate) resin, the layer in the invention is formed from a copolymeric resin of methyl methacrylate and glycidyl methacrylate in a specified copolymerization ratio and the resin is admixed with 2,2',4,4'-tetrahydroxybenzophenone. By virtue of the use of this unique resin composition for the undercoat levelling layer, the troubles due to intermixing between the undercoat levelling layer and the photoresist layer thereon can be avoided to impart the patterned resist layer with excellent properties.

Abstract: An improvement is proposed in a double-coated patterning plate, which consists of a substrate, an undercoat levelling layer and a photoresist layer thereon, as well as in the patterning method therewith. Different from conventional double-coated patterning plate in which the undercoat levelling layer is formed from poly(methyl methacrylate) resin, the layer in the invention is formed from a copolymeric resin of methyl methacrylate and glycidyl methacrylate in a specified copolymerization ratio and the resin is admixed with 2,2',4,4'-tetrahydroxybenzophenone. By virtue of the use of this unique resin composition for the undercoat levelling layer, the troubles due to intermixing between the undercoat levelling layer and the photoresist layer thereon can be avoided to impart the patterned resist layer with excellent properties.

Abstract: Proposed is a novel positive-working photoresist composition suitable for use in the fine patterning works in the manufacture of electronic devices and capable of exhibiting excellent performance with high resolution, high sensitivity, wide range of focusing depth, large exposure dose latitude and other characteristics. The photoresist composition is formulated, in addition to the basic ingredients of an alkali-soluble novolac resin as a film-forming agent and photosensitive ingredient such as an ester of naphthoquinone-1,2-diazide sulfonic acid and a polyhydroxy compound, with a limited amount of 4,4'-bis(dialkylamino) benzophenone, e.g., 4,4'-bis(diethylamino) benzophenone, preferably, in combination with a polyhydroxy compound such as 4,6-bis[1-methyl-1-(4-hydroxyphenyl)ethyl]-1,3-dihydroxy phenol.

Abstract: Disclosed is a positive-working photoresist composition suitable for use in the photolithographic fine patterning work in the manufacture of electronic devices such as VLSIs. The composition comprises, in addition to an alkali-soluble novolac resin as a film-forming ingredient and an esterification product of naphthoquinone-1,2-diazide sulfonic acid as a photosensitive ingredient, a unique additive compound which is an alkyl or aralkyl ester of 2-hydroxy benzoic acid, such as benzyl salicylate, or a phenol compound substituted at least one alkyl group such as 2-tert-butyl-4-methyl phenol. By virtue of the addition of this unique additive, the inventive photoresist composition exhibits an excellent performance of suppressing the standing wave effect in addition to the excellent photosensitivity, resolving power and depth of focusing in the patterning exposure to light as well as good heat resistance of the patterned resist layer.