Abstract: A resonant power conversion device includes: a main circuit provided with a semiconductor switch, a capacitor and an inductor connected in series or parallel to the semiconductor switch; and a drive circuit configured to drive the switching element. The switching element enters an off-state or an on-state depending on a control voltage input to a gate terminal, and the drive circuit includes two or more types of control voltages, as a control voltage at which the switching element enters an off-state.

Abstract: A resonant power conversion device includes: a main circuit provided with a semiconductor switch, a capacitor and an inductor connected in series or parallel to the semiconductor switch; and a drive circuit configured to drive the switching element. The switching element enters an off-state or an on-state depending on a control voltage input to a gate terminal, and the drive circuit includes two or more types of control voltages, as a control voltage at which the switching element enters an off-state.

Abstract: The present disclosure includes by controlling at least either one of a switching frequency of a switching element (S) or a duty ratio indicating an ON period of the switching element, securing delay time from voltage at both ends of the switching element reaches zero voltage by resonance of the resonant circuit (L0, C0) in an OFF state of the switching element until the switching element is turned on, and turning on the switching element within the delay time.

Abstract: The present disclosure includes a drive circuit (2-4) for switching a switching element, and a variable capacity circuit (6A), connected between a control terminal (G) of the switching element and the drive circuit (2-4), capable of switching at least between a first capacity value and a second capacity value different from the first capacity value, and controls a capacity value between the control terminal and the drive circuit via the variable capacity circuit.

Abstract: The present disclosure includes by controlling at least either one of a switching frequency of a switching element (S) or a duty ratio indicating an ON period of the switching element, securing delay time from voltage at both ends of the switching element reaches zero voltage by resonance of the resonant circuit (L0, C0) in an OFF state of the switching element until the switching element is turned on, and turning on the switching element within the delay time.

Abstract: The present disclosure includes a drive circuit (2-4) for switching a switching element, and a variable capacity circuit (6A), connected between a control terminal (G) of the switching element and the drive circuit (2-4), capable of switching at least between a first capacity value and a second capacity value different from the first capacity value, and controls a capacity value between the control terminal and the drive circuit via the variable capacity circuit.

Abstract: A drive device wherein a main switching element is connected to a main current path, an input terminal of the switching element on the higher potential side and an output terminal of the switching element on the lower potential side are electrically connected to a control terminal of the main switching element, a first resistance is connected between an input terminal of the switching element on the lower potential side and a control terminal of the main switching element, a first capacitor is parallelly connected to the first resistance, and a second capacitor is connected between a connection point of the first resistance and a control terminal of the main switching element and a terminal on the higher potential side of the main switching element.

Abstract: A drive device wherein a main switching element is connected to a main current path, an input terminal of the switching element on the higher potential side and an output terminal of the switching element on the lower potential side are electrically connected to a control terminal of the main switching element, a first resistance is connected between an input terminal of the switching element on the lower potential side and a control terminal of the main switching element, a first capacitor is parallelly connected to the first resistance, and a second capacitor is connected between a connection point of the first resistance and a control terminal of the main switching element and a terminal on the higher potential side of the main switching element.

Abstract: A power supply control apparatus includes a DC power supply including a positive electrode and a negative electrode, a load electrically connected to the DC power supply, a relay connected to a current path from the positive electrode to the negative electrode through the load in series, a switching device connected to the current path in series, and a controller controlling the relay and the switching device. The controller, in a case in which the current path is to be electrically cut off, switches the switching device to an Off state and then switches the relay to the Off state.

Abstract: A power conversion device includes a gate voltage adjustment unit (a detection circuit 12) which acts on a drive signal from a gate drive circuit 11 that sends a drive signal to the respective gates of a plurality of semiconductor elements Q1 to Q2 provided in parallel, and which adjusts the gate voltages of the semiconductor elements. The gate voltage adjustment unit superimposes an induction voltage generated on the basis of a difference between a magnetic flux due to a current flowing through one of the plurality of semiconductor elements and a magnetic flux due to a current flowing through each of the other semiconductor elements, onto a gate voltage sent to at least one gate of the plurality of semiconductor elements.

Abstract: A power conversion device includes a gate voltage adjustment unit (a detection circuit 12) which acts on a drive signal from a gate drive circuit 11 that sends a drive signal to the respective gates of a plurality of semiconductor elements Q1 to Q2 provided in parallel, and which adjusts the gate voltages of the semiconductor elements. The gate voltage adjustment unit superimposes an induction voltage generated on the basis of a difference between a magnetic flux due to a current flowing through one of the plurality of semiconductor elements and a magnetic flux due to a current flowing through each of the other semiconductor elements, onto a gate voltage sent to at least one gate of the plurality of semiconductor elements.

Abstract: A power supply control apparatus includes a DC power supply including a positive electrode and a negative electrode, a load electrically connected to the DC power supply, a relay connected to a current path from the positive electrode to the negative electrode through the load in series, a switching device connected to the current path in series, and a controller controlling the relay and the switching device. The controller, in a case in which the current path is to be electrically cut off, switches the switching device to an Off state and then switches the relay to the Off state.

Abstract: An anode region 106 is formed on a bottom portion of a trench 105 in which a gate electrode 108 is formed or in a drift region 102 immediately under the trench 105. A contact hole 110 is formed in the trench 105 at a depth reaching the anode region 106. A source electrode 112 is embedded in the contact hole 110 while interposing an inner wall insulating film 111 therebetween. The anode region 106 and the source electrode 112 are electrically connected to each other in a state of being insulated from the gate electrode 108 by the inner wall insulating film 111.

Abstract: An anode region 106 is formed on a bottom portion of a trench 105 in which a gate electrode 108 is formed or in a drift region 102 immediately under the trench 105. A contact hole 110 is formed in the trench 105 at a depth reaching the anode region 106. A source electrode 112 is embedded in the contact hole 110 while interposing an inner wall insulating film 111 therebetween. The anode region 106 and the source electrode 112 are electrically connected to each other in a state of being insulated from the gate electrode 108 by the inner wall insulating film 111.