Patents by Inventor Taku Umebayashi
Taku Umebayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240096925Abstract: A semiconductor device including a first semiconductor section including a first wiring layer at one side thereof, the first semiconductor section further including a photodiode, a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together, a third semiconductor section including a third wiring layer at one side thereof, the second and the third semiconductor sections being secured together such the first semiconductor section, second semiconductor section, and the third semiconductor section are stacked together, and a first conductive material electrically connecting at least two of (i) the first wiring layer, (ii) the second wiring layer, and (iii) the third wiring layer such that the electrically connected wiring layers are in electrical communication.Type: ApplicationFiled: November 27, 2023Publication date: March 21, 2024Applicant: SONY GROUP CORPORATIONInventors: Taku UMEBAYASHI, Keiji TATANI, Hajime INOUE, Ryuichi KANAMURA
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Patent number: 11875989Abstract: A semiconductor device including a first semiconductor section including a first wiring layer at one side thereof, the first semiconductor section further including a photodiode, a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together, a third semiconductor section including a third wiring layer at one side thereof, the second and the third semiconductor sections being secured together such the first semiconductor section, second semiconductor section, and the third semiconductor section are stacked together, and a first conductive material electrically connecting at least two of (i) the first wiring layer, (ii) the second wiring layer, and (iii) the third wiring layer such that the electrically connected wiring layers are in electrical communication.Type: GrantFiled: April 13, 2022Date of Patent: January 16, 2024Assignee: SONY GROUP CORPORATIONInventors: Taku Umebayashi, Keiji Tatani, Hajime Inoue, Ryuichi Kanamura
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Patent number: 11764243Abstract: A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.Type: GrantFiled: December 2, 2020Date of Patent: September 19, 2023Assignee: SONY CORPORATIONInventors: Taku Umebayashi, Hiroshi Takahashi, Reijiroh Shohji
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Publication number: 20230290800Abstract: A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.Type: ApplicationFiled: May 22, 2023Publication date: September 14, 2023Applicant: SONY GROUP CORPORATIONInventors: Taku Umebayashi, Hiroshi Takahashi, Reijiroh Shohji
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Patent number: 11721716Abstract: A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.Type: GrantFiled: December 2, 2020Date of Patent: August 8, 2023Assignee: SONY CORPORATIONInventors: Taku Umebayashi, Hiroshi Takahashi, Reijiroh Shohji
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Publication number: 20220246668Abstract: A semiconductor device including a first semiconductor section including a first wiring layer at one side thereof, the first semiconductor section further including a photodiode, a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together, a third semiconductor section including a third wiring layer at one side thereof, the second and the third semiconductor sections being secured together such the first semiconductor section, second semiconductor section, and the third semiconductor section are stacked together, and a first conductive material electrically connecting at least two of (i) the first wiring layer, (ii) the second wiring layer, and (iii) the third wiring layer such that the electrically connected wiring layers are in electrical communication.Type: ApplicationFiled: April 13, 2022Publication date: August 4, 2022Applicant: SONY GROUP CORPORATIONInventors: Taku UMEBAYASHI, Keiji TATANI, Hajime INOUE, Ryuichi KANAMURA
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Patent number: 11374049Abstract: A semiconductor device including a first semiconductor section including a first wiring layer at one side thereof, the first semiconductor section further including a photodiode, a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together, a third semiconductor section including a third wiring layer at one side thereof, the second and the third semiconductor sections being secured together such the first semiconductor section, second semiconductor section, and the third semiconductor section are stacked together, and a first conductive material electrically connecting at least two of (i) the first wiring layer, (ii) the second wiring layer, and (iii) the third wiring layer such that the electrically connected wiring layers are in electrical communication.Type: GrantFiled: October 12, 2020Date of Patent: June 28, 2022Assignee: SONY CORPORATIONInventors: Taku Umebayashi, Keiji Tatani, Hajime Inoue, Ryuichi Kanamura
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Patent number: 11289527Abstract: A semiconductor device having a first semiconductor section including a first wiring layer at one side thereof; a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together with the respective first and second wiring layer sides of the first and second semiconductor sections facing each other; a conductive material extending through the first semiconductor section to the second wiring layer of the second semiconductor section and by means of which the first and second wiring layers are in electrical communication; and an opening, other than the opening for the conductive material, which extends through the first semiconductor section to the second wiring layer.Type: GrantFiled: August 4, 2020Date of Patent: March 29, 2022Assignee: SONY CORPORATIONInventors: Hiroshi Takahashi, Taku Umebayashi
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Patent number: 11094729Abstract: A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.Type: GrantFiled: January 17, 2020Date of Patent: August 17, 2021Inventors: Taku Umebayashi, Hiroshi Takahashi, Reijiroh Shohji
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Patent number: 11043532Abstract: A semiconductor device according to an embodiment of the present technology, and the semiconductor device includes: a first substrate provided with a memory array; and a second substrate that is stacked with the first substrate, and is provided with a peripheral circuit that controls operation of the memory array.Type: GrantFiled: December 13, 2017Date of Patent: June 22, 2021Assignee: Sony Semiconductor Solutions CorporationInventors: Takashi Yokoyama, Taku Umebayashi
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Publication number: 20210091133Abstract: A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.Type: ApplicationFiled: December 2, 2020Publication date: March 25, 2021Applicant: Sony CorporationInventors: Taku Umebayashi, Hiroshi Takahashi, Reijiroh Shohji
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Patent number: 10950647Abstract: A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.Type: GrantFiled: June 26, 2020Date of Patent: March 16, 2021Assignee: SONY CORPORATIONInventors: Taku Umebayashi, Hiroshi Takahashi, Reijiroh Shohji
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Publication number: 20210043676Abstract: A semiconductor device including a first semiconductor section including a first wiring layer at one side thereof, the first semiconductor section further including a photodiode, a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together, a third semiconductor section including a third wiring layer at one side thereof, the second and the third semiconductor sections being secured together such the first semiconductor section, second semiconductor section, and the third semiconductor section are stacked together, and a first conductive material electrically connecting at least two of (i) the first wiring layer, (ii) the second wiring layer, and (iii) the third wiring layer such that the electrically connected wiring layers are in electrical communication.Type: ApplicationFiled: October 12, 2020Publication date: February 11, 2021Applicant: SONY CORPORATIONInventors: Taku UMEBAYASHI, Keiji TATANI, Hajime INOUE, Ryuichi KANAMURA
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Patent number: 10916577Abstract: A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.Type: GrantFiled: March 19, 2019Date of Patent: February 9, 2021Assignee: Sony CorporationInventors: Taku Umebayashi, Hiroshi Takahashi, Reijiroh Shohji
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Patent number: 10879299Abstract: A semiconductor device including a semiconductor substrate having a first surface and a second surface that face each other, and having an element region and an isolation region, the element region including a transistor in the first surface, and the isolation region including an element isolation layer surrounding the element region; and a contact plug extending from the first surface to the second surface in the isolation region of the semiconductor substrate.Type: GrantFiled: January 30, 2018Date of Patent: December 29, 2020Assignee: SONY CORPORATIONInventors: Takashi Yokoyama, Taku Umebayashi
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Publication number: 20200365641Abstract: A semiconductor device having a first semiconductor section including a first wiring layer at one side thereof; a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together with the respective first and second wiring layer sides of the first and second semiconductor sections facing each other; a conductive material extending through the first semiconductor section to the second wiring layer of the second semiconductor section and by means of which the first and second wiring layers are in electrical communication; and an opening, other than the opening for the conductive material, which extends through the first semiconductor section to the second wiring layer.Type: ApplicationFiled: August 4, 2020Publication date: November 19, 2020Applicant: Sony CorporationInventors: Hiroshi Takahashi, Taku Umebayashi
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Patent number: 10840290Abstract: A semiconductor device including a first semiconductor section including a first wiring layer at one side thereof, the first semiconductor section further including a photodiode, a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together, a third semiconductor section including a third wiring layer at one side thereof, the second and the third semiconductor sections being secured together such the first semiconductor section, second semiconductor section, and the third semiconductor section are stacked together, and a first conductive material electrically connecting at least two of (i) the first wiring layer, (ii) the second wiring layer, and (iii) the third wiring layer such that the electrically connected wiring layers are in electrical communication.Type: GrantFiled: August 29, 2019Date of Patent: November 17, 2020Assignee: Sony CorporationInventors: Taku Umebayashi, Keiji Tatani, Hajime Inoue, Ryuichi Kanamura
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Publication number: 20200328244Abstract: A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.Type: ApplicationFiled: June 26, 2020Publication date: October 15, 2020Applicant: Sony CorporationInventors: Taku Umebayashi, Hiroshi Takahashi, Reijiroh Shohji
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Patent number: 10777600Abstract: A semiconductor device having a first semiconductor section including a first wiring layer at one side thereof; a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together with the respective first and second wiring layer sides of the first and second semiconductor sections facing each other; a conductive material extending through the first semiconductor section to the second wiring layer of the second semiconductor section and by means of which the first and second wiring layers are in electrical communication; and an opening, other than the opening for the conductive material, which extends through the first semiconductor section to the second wiring layer.Type: GrantFiled: August 22, 2019Date of Patent: September 15, 2020Assignee: Sony CorporationInventors: Hiroshi Takahashi, Taku Umebayashi
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Publication number: 20200152685Abstract: A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.Type: ApplicationFiled: January 17, 2020Publication date: May 14, 2020Inventors: Taku Umebayashi, Hitoshi Takahashi, Reijiroh Shohji