Abstract: A method for manufacturing a light-emitting element includes: providing a structure body including: a semiconductor structure body having a first surface, a second surface located on a side opposite to the first surface, and a lateral surface that connects the first surface and the second surface, a first insulating film covering the lateral surface of the semiconductor structure body, a second insulation film covering the first surface of the semiconductor structure body and an upper surface of the first insulating film on a first surface side, and a substrate facing the second surface of the semiconductor structure body; forming a mask on a part of the second insulating film located above the first surface of the semiconductor structure body; and removing a part of the second insulating film located around the mask in a top view and exposed from the mask.

Abstract: A method for manufacturing a light-emitting element includes: providing a structure body including: a semiconductor structure body having a first surface, a second surface located on a side opposite to the first surface, and a lateral surface that connects the first surface and the second surface, a first insulating film covering the lateral surface of the semiconductor structure body, a second insulation film covering the first surface of the semiconductor structure body and an upper surface of the first insulating film on a first surface side, and a substrate facing the second surface of the semiconductor structure body; forming a mask on a part of the second insulating film located above the first surface of the semiconductor structure body; and removing a part of the second insulating film located around the mask in a top view and exposed from the mask.

Abstract: A method of manufacturing light-emitting elements includes: providing a wafer comprising a semiconductor stack that comprises: a first semiconductor layer, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer, wherein the semiconductor stack comprises a plurality of mutually isolated element areas each comprising a part of the first semiconductor layer, a part of the active layer, and a part of the second semiconductor layer; forming a first reflection layer contiguously on or above (i) the second semiconductor layer in the plurality of element areas and (ii) the second semiconductor layer located between adjacent ones of the plurality of element areas; forming a plurality of first masks covering parts of the first reflection layer that are on or above the second semiconductor layer in the plurality of element areas; and forming a groove between the adjacent ones of the element areas.