Abstract: A glass substrate for a front filter of a display device having considerable strength and excellent display quality, and being lightweight is provided. A display device employing this display filter substrate is provided. The glass substrate has one or more of electromagnetic-wave shielding function, near infrared ray blocking function, and anti-reflection function. The glass substrate has a thickness of 1.8-3.2 mm, an average surface compressive stress of 20-70 MPa, and a warp ratio of the glass substrate of 1.0% or less. The surface compressive stress is applied by an air blast cooling process or a chemical reinforcing process. The filter substrate is disposed over a front surface of the display device.

Abstract: A glass substrate for a front filter of a display device having considerable strength and excellent display quality, and being lightweight is provided. A display device employing this display filter substrate is provided. The glass substrate has one or more of electromagnetic-wave shielding function, near infrared ray blocking function, and anti-reflection function. The glass substrate has a thickness of 1.8-3.2 mm, an average surface compressive stress of 20-70 MPa, and a warp ratio of the glass substrate of 1.0% or less. The surface compressive stress is applied by an air blast cooling process or a chemical reinforcing process. The filter substrate is disposed over a front surface of the display device.

Abstract: A glass article having no problem of stain due to metal colloids because of its excellent efficiency of preventing the diffusion of metal ions, and a glass substrate for a high-quality display comprising the aforementioned glass article are provided. The glass article comprises an alkali-containing glass substrate 1, and a barrier film 2 formed on a surface of the alkali-containing glass substrate 1. The metal ion diffusion barrier film 2 mainly contains indium oxide and/or tin oxide. A glass substrate for a display comprises: an alkali-containing glass substrate 1; an alkali ion diffusion barrier film 5 formed on a surface of said alkali-containing glass substrate 1; a barrier film 2 mainly containing indium oxide and/or tin oxide; an insulating film 3; and an electrode film 4. The surface electrical resistance of the insulating film is kept in a range from 1.0×106 &OHgr;/□ to 1.0×1016 &OHgr;/□ even after heating process at 550° C. for 1 hour.

Abstract: A method for producing a silicon dioxide film by contacting a substrate such as glass with a treating liquid comprising a hydrosilicofluoric acid solution supersaturated with silicon dioxide to deposit a silicon dioxide film on the surface of the substrate, the method being characterized by providing a device for preventing an Si component from escaping from the treating liquid. According to the method, pollution of working environment and decrease in concentration of solution do not occur during the formation of silicon dioxide film.

Abstract: A process for depositing a silicon dioxide film on the surface of a substrate such as alkali-containing glass by bringing the substrate into contact with a treating solution comprising a hydrosilicofluoric acid solution supersaturated with silicon dioxide, which is obtained by heating a hydrosilicofluoric acid solution substantially saturated with silicon dioxide which has a temperature of not more than 0.degree. C., to a temperature of not less than 25.degree. C.

Abstract: A method of depositing a silicon dioxide film on the surface of a substrate such as alkali-containing glass by bringing the substrate into contact with a treating solution comprising a hydrosilicofluoric acid solution supersaturated with silicon dioxide, which is obtained by increasing the temperature of a hydrosilicofluoric acid solution substantially saturated with silicon dioxide.