Abstract: A technique is provided that can prevent cracking of a protective film in the uppermost layer of a semiconductor device and improve the reliability of the semiconductor device. Bonding pads formed over a principal surface of a semiconductor chip are in a rectangular shape, and an opening is formed in a protective film over each bonding pad in such a manner that an overlapping width of the protective film in a wire bonding region of each bonding pad becomes wider than an overlapping width of the protective film in a probe region of each bonding pad.

Abstract: A technique is provided that can prevent cracking of a protective film in the uppermost layer of a semiconductor device and improve the reliability of the semiconductor device. Bonding pads formed over a principal surface of a semiconductor chip are in a rectangular shape, and an opening is formed in a protective film over each bonding pad in such a manner that an overlapping width of the protective film in a wire bonding region of each bonding pad becomes wider than an overlapping width of the protective film in a probe region of each bonding pad.

Abstract: A technique is provided that can prevent cracking of a protective film in the uppermost layer of a semiconductor device and improve the reliability of the semiconductor device. Bonding pads formed over a principal surface of a semiconductor chip are in a rectangular shape, and an opening is formed in a protective film over each bonding pad in such a manner that an overlapping width of the protective film in a wire bonding region of each bonding pad becomes wider than an overlapping width of the protective film in a probe region of each bonding pad.

Abstract: A technique is provided that can prevent cracking of a protective film in the uppermost layer of a semiconductor device and improve the reliability of the semiconductor device. Bonding pads formed over a principal surface of a semiconductor chip are in a rectangular shape, and an opening is formed in a protective film over each bonding pad in such a manner that an overlapping width of the protective film in a wire bonding region of each bonding pad becomes wider than an overlapping width of the protective film in a probe region of each bonding pad.

Abstract: A technique is provided that can prevent cracking of a protective film in the uppermost layer of a semiconductor device and improve the reliability of the semiconductor device. Bonding pads formed over a principal surface of a semiconductor chip are in a rectangular shape, and an opening is formed in a protective film over each bonding pad in such a manner that an overlapping width of the protective film in a wire bonding region of each bonding pad becomes wider than an overlapping width of the protective film in a probe region of each bonding pad.

Abstract: A technique is provided that can prevent cracking of a protective film in the uppermost layer of a semiconductor device and improve the reliability of the semiconductor device. Bonding pads formed over a principal surface of a semiconductor chip are in a rectangular shape, and an opening is formed in a protective film over each bonding pad in such a manner that an overlapping width of the protective film in a wire bonding region of each bonding pad becomes wider than an overlapping width of the protective film in a probe region of each bonding pad.

Abstract: A technique is provided that can prevent cracking of a protective film in the uppermost layer of a semiconductor device and improve the reliability of the semiconductor device. Bonding pads formed over a principal surface of a semiconductor chip are in a rectangular shape, and an opening is formed in a protective film over each bonding pad in such a manner that an overlapping width of the protective film in a wire bonding region of each bonding pad becomes wider than an overlapping width of the protective film in a probe region of each bonding pad.

Abstract: The cost of a semiconductor device is to be reduced. An electrical connection between a first semiconductor chip and a second semiconductor chip stacked on the first semiconductor chip is made through an inner lead portion of a lead disposed at a position around the first semiconductor chip and two bonding wires.

Abstract: A semiconductor device according to the invention is provided with square first semiconductor chip and second semiconductor chip laminated with each one main surface opposite, a supporting lead a part of which is arranged between one main surface of the first semiconductor chip and one main surface of the second semiconductor chip and a resin sealing body that seals the first semiconductor chip, the second semiconductor chip and the supporting lead and is characterized in that the respective one main surfaces of the first semiconductor chip and the second semiconductor chip are bonded to a part of the supporting lead via an adhesive layer and a part of the supporting lead is formed so that it has smaller width than the respective sides of the first semiconductor chip and the second semiconductor chip.

Abstract: A semiconductor device according to the invention is provided with square first semiconductor chip and second semiconductor chip laminated with each one main surface opposite, a supporting lead a part of which is arranged between one main surface of the first semiconductor chip and one main surface of the second semiconductor chip and a resin sealing body that seals the first semiconductor chip, the second semiconductor chip and the supporting lead and is characterized in that the respective one main surfaces of the first semiconductor chip and the second semiconductor chip are bonded to a part of the supporting lead via an adhesive layer and a part of the supporting lead is formed so that it has smaller width than the respective sides of the first semiconductor chip and the second semiconductor chip.

Abstract: A semiconductor device according to the invention is provided with square first semiconductor chip and second semiconductor chip laminated with each one main surface opposite, a supporting lead a part of which is arranged between one main surface of the first semiconductor chip and one main surface of the second semiconductor chip and a resin sealing body that seals the first semiconductor chip, the second semiconductor chip and the supporting lead and is characterized in that the respective one main surfaces of the first semiconductor chip and the second semiconductor chip are bonded to a part of the supporting lead via an adhesive layer and a part of the supporting lead is formed so that it has smaller width than the respective sides of the first semiconductor chip and the second semiconductor chip.

Abstract: A semiconductor device according to the invention is provided with square first semiconductor chip and second semiconductor chip laminated with each one main surface opposite, a supporting lead a part of which is arranged between one main surface of the first semiconductor chip and one main surface of the second semiconductor chip and a resin sealing body that seals the first semiconductor chip, the second semiconductor chip and the supporting lead and is characterized in that the respective one main surfaces of the first semiconductor chip and the second semiconductor chip are bonded to a part of the supporting lead via an adhesive layer and a part of the supporting lead is formed so that it has smaller width than the respective sides of the first semiconductor chip and the second semiconductor chip.

Abstract: The cost of a semiconductor device is to be reduced. An electrical connection between a first semiconductor chip and a second semiconductor chip stacked on the first semiconductor chip is made through an inner lead portion of a lead disposed at a position around the first semiconductor chip and two bonding wires.

Abstract: A semiconductor device according to the invention is provided with square first semiconductor chip and second semiconductor chip laminated with each one main surface opposite, a supporting lead a part of which is arranged between one main surface of the first semiconductor chip and one main surface of the second semiconductor chip and a resin sealing body that seals the first semiconductor chip, the second semiconductor chip and the supporting lead and is characterized in that the respective one main surfaces of the first semiconductor chip and the second semiconductor chip are bonded to a part of the supporting lead via an adhesive layer and a part of the supporting lead is formed so that it has smaller width than the respective sides of the first semiconductor chip and the second semiconductor chip.

Abstract: A semiconductor device according to the invention is provided with square first semiconductor chip and second semiconductor chip laminated with each one main surface opposite, a supporting lead a part of which is arranged between one main surface of the first semiconductor chip and one main surface of the second semiconductor chip and a resin sealing body that seals the first semiconductor chip, the second semiconductor chip and the supporting lead and is characterized in that the respective one main surfaces of the first semiconductor chip and the second semiconductor chip are bonded to a part of the supporting lead via an adhesive layer and a part of the supporting lead is formed so that it has smaller width than the respective sides of the first semiconductor chip and the second semiconductor chip.