Abstract: There are provided a novel norbornene derivative which is a material for a chemically amplifying type photoresist for F2 laser, possesses excellent transparency and improved dry etching resistivity and has a fluorine-containing ketone unit or fluorine-containing tertiary alcohol unit directly bonded to the norbornene backbone; a fluorine-containing polymer obtained by using the norbornene derivative as a copolymerizable monomer; and a chemically amplifying type photoresist composition comprising the fluorine-containing polymer, a photoacid generator and a solvent.

Abstract: The invention provides a fluoroethercarboxylic acid which is represented by the general formula (I): Rf1OCHFCF2ORf2COOM ??(I) wherein Rf1 represents a partially or fully fluorinated alkyl group, which may optionally be interrupted with one or more oxygen atoms, Rf2 represents a partially or fully fluorinated alkylene group, which may optionally be interrupted with one or more oxygen atoms, and M represents a monovalent alkali metal, NH4 or H. The fluoroethercarboxylic acid can be suitably used as a surfactant and is low in bioaccumulation. The invention is also a method of fluoropolymer production and an aqueous fluoropolymer dispersion, using the fluoroethercarboxylic acid as a surfactant.

Abstract: There is provided a laminated resist which is transparent in the case of exposure light of not less than 193 nm and can form a fine pattern having an intended form without defects with good reproducibility. The laminated resist has a photoresist layer (L1) and a transparent protective layer (L2) on a substrate and the protective layer (L2) is formed on an outermost surface of the laminated resist. The protective layer (L2) has an absorption coefficient of not more than 1.0 ?m?1 in the case of ultraviolet light of a wavelength of not less than 193 nm, a dissolution rate in a developing solution of not less than 50 nm/sec and a dissolution rate in pure water of not more than 10 nm/min.

Abstract: A fluorine-containing unsaturated cyclic compound represented by the formula (1)(a): wherein Z3 are the same or different and each is —Rf3-Z4, in which Z4 is at least one functional group selected from the group consisting of OH group, COOH group, a derivative of carboxylic acid group and a functional group protected by a protective group which can convert the functional group to OH group by reaction with an acid; Rf3 is a fluorine-containing alkylene group which has 1 to 30 carbon atoms and may have ether bond; n11 is an integer of from 1 to 4.

Abstract: The present invention provides a process for producing a fluorinated ionomer, comprising copolymerizing, in the presence of a polymerization initiator, (i) a compound represented by Formula (I) (M)1/LOSO2CFY(CF2)mO(CFXCF2O)nCF?CF2??(I) wherein M is H or a metal with a valence of L (L is 1, 2 or 3), X is F, Cl or CF3, Y is halogen, m is 1 to 5, and n is 0 to 5, (ii) tetrafluoroethylene and (iii) at least one third monomer selected from the group consisting of hexafluoropropylene, chlorotrifluoroethylene, vinylidene fluoride, CF2?CFORf (Rf is C1 to C5 perfluoroalkyl) and ethylene. The present invention further provides a method for purifying and concentrating a fluorinated ionomer, comprising ultrafiltration or dialysis of a fluorinated ionomer solution or dispersion, and a method for forming a film of the fluorinated ionomer.

Abstract: There is provided a laminated resist which is transparent in the case of exposure light of not less than 193 nm and can form a fine pattern having an intended form without defects with good reproducibility. The laminated resist has a photoresist layer (L1) and a transparent protective layer (L2) on a substrate and the protective layer (L2) is formed on an outermost surface of the laminated resist. The protective layer (L2) has an absorption coefficient of not more than 1.0 ?m?1 in the case of ultraviolet light of a wavelength of not less than 193 nm, a dissolution rate in a developing solution of not less than 50 nm/sec and a dissolution rate in pure water of not more than 10 nm/min.

Abstract: There are provided a novel norbornene derivative which is a material for a chemically amplifying type photoresist for F2 laser, possesses excellent transparency and improved dry etching resistivity and has a fluorine-containing ketone unit or fluorine-containing tertiary alcohol unit directly bonded to the norbornene backbone; a fluorine-containing polymer obtained by using the norbornene derivative as a copolymerizable monomer; and a chemically amplifying type photoresist composition comprising the fluorine-containing polymer, a photoacid generator and a solvent.

Abstract: There are provided a novel norbornene derivative which is a material for a chemically amplifying type photoresist for F2 laser, possesses excellent transparency and improved dry etching resistivity and has a fluorine-containing ketone unit or fluorine-containing tertiary alcohol unit directly bonded to the norbornene backbone; a fluorine-containing polymer obtained by using the norbornene derivative as a copolymerizable monomer; and a chemically amplifying type photoresist composition comprising the fluorine-containing polymer, a photoacid generator and a solvent.

Abstract: There is provided a method of forming a fine pattern by using a practicable fluorine-containing polymer which has a high transparency to exposure light having a short wavelength such as F2 laser and can undergo resolution of a fine pattern.

Abstract: There is provided a fluorine-containing copolymer having an aliphatic monocyclic structure in the polymer trunk chain which has a number average molecular weight of from 500 to 1,000,000 and is represented by the formula (Ma): -(M1)-(M2a)-(N)-??(Ma) in which the structural unit M1 is a structural unit derived from an ethylenic monomer having 2 or 3 carbon atoms and at least one fluorine atom, the structural unit M2a is at least one structural unit which introduces an aliphatic monocyclic structure in the polymer trunk chain and is represented by the formula (a): wherein R1 is at least one hydrocarbon group selected from the group consisting of a divalent hydrocarbon group having 1 to 8 carbon atoms and constituting a ring which may be further substituted with a hydrocarbon group or a fluorine-containing alkyl group and a divalent hydrocarbon group having ether bond which has the sum of carbon atoms and oxygen atoms of 2 to 8, constitutes a ring and may be further substituted with a hydrocarbon group or

Abstract: There is provided a fluorine-containing copolymer having an aliphatic monocyclic structure in the polymer trunk chain which has a number average molecular weight of from 500 to 1,000,000 and is represented by the formula (Ma): -(M1)-(M2a)-(N)—??(Ma) in which the structural unit M1 is a structural unit derived from an ethylenic monomer having 2 or 3 carbon atoms and at least one fluorine atom, the structural unit M2a is at least one structural unit which introduces an aliphatic monocyclic structure in the polymer trunk chain and is represented by the formula (a): wherein R1 is at least one hydrocarbon group selected from the group consisting of a divalent hydrocarbon group having 1 to 8 carbon atoms and constituting a ring which may be further substituted with a hydrocarbon group or a fluorine-containing alkyl group and a divalent hydrocarbon group having ether bond which has the sum of carbon atoms and oxygen atoms of 2 to 8, constitutes a ring and may be further substituted with a hydrocarbon group o

Abstract: There is provided a fluorine-containing copolymer having an aliphatic monocyclic structure in the polymer trunk chain which has a number average molecular weight of from 500 to 1,000,000 and is represented by the formula (Ma): -(M1)-(M2a)-(N)-??(Ma) in which the structural unit M1 is a structural unit derived from an ethylenic monomer having 2 or 3 carbon atoms and at least one fluorine atom, the structural unit M2a is at least one structural unit which introduces an aliphatic monocyclic structure in the polymer trunk chain and is represented by the formula (a): wherein R1 is at least one hydrocarbon group selected from the group consisting of a divalent hydrocarbon group having 1 to 8 carbon atoms and constituting a ring which may be further substituted with a hydrocarbon group or a fluorine-containing alkyl group and a divalent hydrocarbon group having ether bond which has the sum of carbon atoms and oxygen atoms of 2 to 8, constitutes a ring and may be further substituted with a hydrocarbon group or

Abstract: There is provided a novel fluorine-containing polymer having an acid-reactive group which has a high transparency against energy rays (radioactive rays) in a vacuum ultraviolet region (157 nm), and further there are provided a material for fluorine-containing base polymer prepared from the polymer and suitable for a photoresist and a chemically amplifying type resist composition obtained therefrom. The polymer has a number average molecular weight of from 1,000 to 1,000,000 and represented by the formula: -(M1)-(M2)-(A)-, wherein M1 is a structural unit having an acid-labile or acid-degradable functional group, M2 is a structural unit of fluorine-containing acryl ester, A is a structural unit derived from other copolymerizable monomer, the percent by mole ratio M1/M2 is 1 to 99/99 to 1 and the polymer comprises from 1 to 99% by mole of the structural unit M1, from 1 to 99% by mole of the structural unit M2 and from 0 to 98% by mole of the structural unit A1.

Abstract: There is provided a process for preparing a fluorine-containing polymer for resist which is excellent in transparency in a vacuum ultraviolet region, comprises a structural unit derived from a fluorine-containing ethylenic monomer and/or a structural unit derived from a monomer which can provide an aliphatic ring structure in the polymer trunk chain and may have a fluorine atom, and has an acid-reactive group Y1 reacting with an acid or a group Y2 which can be converted to the acid-reactive group Y1, in which the fluorine-containing ethylenic monomer and/or the monomer which can provide an aliphatic ring structure in the polymer trunk chain are subjected to radical polymerization by using an organic peroxide represented by the formula (1): wherein R50 and R51 are the same or different and each is a hydrocarbon group having 1 to 30 carbon atoms which may have ether bond (an atom at an end of bond is not oxygen atom); p1 and p2 are the same or different and each is 0 or 1; p3 is 1 or 2, and also there is pr

Abstract: There is provided a method of forming a fine pattern by using a highly practicable fluorine-containing polymer which has a high transparency to exposure light having a short wavelength such as F2 laser and can improve dry etching resistance without remarkably lowering transparency.

Abstract: There is provided a novel fluorine-containing polymer having an acid-reactive group which has a high transparency against energy rays (radioactive rays) in a vacuum ultraviolet region (157 nm), and further there are provided a material for fluorine-containing base polymer prepared from the polymer and suitable for a photoresist and a chemically amplifying type resist composition obtained therefrom. The polymer has a number average molecular weight of from 1,000 to 1,000,000 and represented by the formula: —(M1)—(M2)—(A)—, wherein M1 is a structural unit having an acid-labile or acid-degradable functional group, M2 is a structural unit of fluorine-containing acryl ester, A is a structural unit derived from other copolymerizable monomer, the percent by mole ratio M1/M2 is 1 to 99/99 to 1 and the polymer comprises from 1 to 99% by mole of the structural unit M1, from 1 to 99% by mole of the structural unit M2 and from 0 to 98% by mole of the structural unit A1.

Abstract: There is provided a method of forming a fine pattern by using a practicable fluorine-containing polymer which has a high transparency to exposure light having a short wavelength such as F2 laser and can undergo resolution of a fine pattern.

Abstract: There is provided a method of forming, on a substrate, a fine resist pattern comprising a step for forming a photosensitive layer by using a photo-sensitive composition comprising at least a compound generating an acid by irradiation of light and a fluorine-containing polymer,

Abstract: There is provided a method of forming a fine resist pattern in which a highly practicable photosensitive composition obtained from a material having a high transparency against an exposure light having a short wavelength such as F2 excimer laser beam is used as a resist.

Abstract: There are provided a novel norbornene derivative which is a material for a chemically amplifying type photoresist for F2 laser, possesses excellent transparency and improved dry etching resistivity and has a fluorine-containing ketone unit or fluorine-containing tertiary alcohol unit directly bonded to the norbornene backbone; a fluorine-containing polymer obtained by using the norbornene derivative as a copolymerizable monomer; and a chemically amplifying type photoresist composition comprising the fluorine-containing polymer, a photoacid generator and a solvent.