Abstract: A semiconductor device which could strengthen the mechanical strength of the protective film and with which packaging of the wafer level with electric high reliability is performed and a fabrication method for the semiconductor device are provided. The semiconductor device includes a semiconductor substrate; a field effect transistor including a gate electrode, a drain electrode, and a source electrode which are formed on the semiconductor substrate; a hollow protective film provided on the semiconductor substrate so that an inner surface bonds to the upper surface of the one or both of the drain electrode and the source electrode of the field effect transistor, wherein the hollow protective film includes a first cap layer contacting the upper surface of the one or both of the drain electrode and the source electrode, and a second cap layer placed on the first cap layer.