Abstract: An object of the present invention is to provide a negative thermal expansion material having better negative thermal expansion characteristics. The present invention is a negative thermal expansion material, comprising a copper vanadium composite oxide represented by the following general formula (1): CuxCayVzOt. In the general formula (1), 0<x<2.50, 0<y<2.00, 1.70?z?2.30, 6.00?t?9.00, and 1.00?x+y?3.00.

Abstract: An object of the present invention is to provide a negative thermal expansion material having better negative thermal expansion characteristics. The present invention is a negative thermal expansion material, comprising copper vanadium composite oxide powder dissolving Al atoms and represented by the following general formula (1), CuxMyVzOt (1). In general formula (1), M represents a metallic element with an atomic number of 11 or more other than Cu, V, and Al, 1.60?x?2.40, 0.00?y?0.40, 1.70?z?2.30, 6.00?t?9.00, 1.00?x+y?3.00, and a molar number of the Al atoms in terms of atoms>a molar number of M atoms in terms of atoms if an M element is contained.

Abstract: An object of the present invention is to provide a negative thermal expansion material having better negative thermal expansion characteristics. The present invention is a negative thermal expansion material, comprising a copper vanadium composite oxide dissolving Li atoms and represented by the following general formula (1): (CuxMy)(VaPb)Ot. In the general formula (1), M represents a metallic element with an atomic number of 11 or more other than Cu and V, 1.60?x?2.40, 0.00?y?0.40, 1.60?a?2.40, 0.00?b?0.40, 5.00?t?9.00, 1.60?x+y?2.40, and 1.60?a+b?2.40.

Abstract: There is provided a method for producing a fluoropolymer, the method including polymerizing a fluoromonomer in an aqueous medium to obtain a polymerization dispersion containing the fluoropolymer, and bringing the fluoropolymer in the polymerization dispersion into contact with an alcohol having 3 to 5 carbon atoms to coagulate the fluoropolymer to thereby obtain the fluoropolymer.

Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, the protection film, and the phase shift film being arranged in this order. The phase shift film contains at least one first element X1 selected from the first group consisting of ruthenium (Ru), iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), and at least one second element X2 selected from the second group consisting of oxygen (O), boron (B), carbon (C), and nitrogen (N). In the phase shift film, a chemical shift of a peak of 3d5/2 or a peak of 4f7/2 of the first element X1 observed by X-ray electron spectroscopy is less than 0.3 eV.

Abstract: A reflective mask blank includes a substrate, a multilayered reflection film configured to reflect EUV rays, a protection film configured to protect the multilayered reflection film, and an absorption film configured to absorb the EUV rays in this order. The protection film contains Rh as a main component. The multilayered reflection film includes an uppermost layer that is closest to the protection film in the multilayered reflection film and contains Si and N. In the uppermost layer, an element ratio (N/Si) of N to Si is greater than 0.00 and less than 1.50, and an element ratio (O/Si) of O to Si is 0.00 or greater and less than 0.44.

Abstract: The purpose of the present invention is to provide a power conversion device capable of further decreasing, compared to the prior art, misdetection of failures in a chopper circuit which constitutes phases. In order to achieve the foregoing, the present invention comprises: a multi-phase transformer circuit in which a plurality of chopper circuits are connected in parallel according to the number of phases; a drift detection unit which detects drift in a phase current in each chopper circuit; and a failure detection unit which variably sets a failure threshold value according to a state quantity of the chopper circuit, and which detects a failure in the chopper circuit by comparing the drift with the failure threshold value.

Abstract: A reflective mask blank includes a substrate, a multilayered reflection film configured to reflect EUV rays, a protection film configured to protect the multilayered reflection film, and an absorption film configured to absorb the EUV rays in this order. The protection film contains Rh as a main component. The multilayered reflection film includes an uppermost layer that is closest to the protection film in the multilayered reflection film and contains Si and N. In the uppermost layer, an element ratio (N/Si) of N to Si is greater than 0.00 and less than 1.50, and an element ratio (O/Si) of O to Si is 0.00 or greater and less than 0.44.

Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light, in this order. The protection film contains 50 at % or more of Rh. When a band-shaped gray scale image parallel to an interface between the protection film and the multilayer reflective film is obtained by imaging a cross section of the protection film with a transmission electron microscope (TEM) and a luminance profile of the gray scale image in a longitudinal direction of the gray scale image is created, a number of peaks of the luminance profile per 100 nm in the longitudinal direction of the gray scale image is 50 or more.

Abstract: An information processing system includes a memory and processing circuitry configured to generate a display image by rendering plural objects in a virtual space according to the object information; acquire a user input relating to a user object of the plural objects, the user object associated with the user; determine movement of the user object in the virtual space in accordance with the user input; generate positional relationship information indicating a positional relationship in the virtual space between the user object and a predetermined object of the plural objects; store first rendering information for rendering a first animation with a combination of the predetermined object and the user object; and generate the first animation according to the first rendering information in a case that a distance between the predetermined object and the user object is shorter than or equal to a predetermined distance according to the positional relationship information.

Abstract: A reflective mask blank includes a substrate, a multilayered reflection film configured to reflect EUV rays, a protection film configured to protect the multilayered reflection film, and an absorption film configured to absorb the EUV rays in this order. The protection film contains Rh as a main component. The multilayered reflection film includes an uppermost layer that is closest to the protection film in the multilayered reflection film and contains Si and N. In the uppermost layer, an element ratio (N/Si) of N to Si is greater than 0.00 and less than 1.50, and an element ratio (O/Si) of O to Si is 0.00 or greater and less than 0.44.

Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light, in this order. The protection film contains 50 at % or more of Rh. When a band-shaped gray scale image parallel to an interface between the protection film and the multilayer reflective film is obtained by imaging a cross section of the protection film with a transmission electron microscope (TEM) and a luminance profile of the gray scale image in a longitudinal direction of the gray scale image is created, a number of peaks of the luminance profile per 100 nm in the longitudinal direction of the gray scale image is 50 or more.

Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, the protection film, and the phase shift film being arranged in this order. The phase shift film contains at least one first element X1 selected from the first group consisting of ruthenium (Ru), iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), and at least one second element X2 selected from the second group consisting of oxygen (O), boron (B), carbon (C), and nitrogen (N). In the phase shift film, a chemical shift of a peak of 3d5/2 or a peak of 4f7/2 of the first element X1 observed by X-ray electron spectroscopy is less than 0.3 eV.

Abstract: A voltage transformer includes a magnetic coupling interleaved chopper circuit and a control unit configured to control the magnetic coupling interleaved chopper circuit. The control unit includes a switching frequency setting unit configured to set a switching frequency of the magnetic coupling interleaved chopper circuit on the basis of a state quantity indicating an operation state of the magnetic coupling interleaved chopper circuit and is configured to generate a voltage-transformation gate signal of the switching frequency set by the switching frequency setting unit and to output the generated voltage-transformation gate signal to the magnetic coupling interleaved chopper circuit.

Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, the protection film, and the phase shift film being arranged in this order. The phase shift film contains at least one first element X1 selected from the first group consisting of ruthenium (Ru), iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), and at least one second element X2 selected from the second group consisting of oxygen (O), boron (B), carbon (C), and nitrogen (N). In the phase shift film, a chemical shift of a peak of 3d5/2 or a peak of 4f7/2 of the first element X1 observed by X-ray electron spectroscopy is less than 0.3 eV.

Abstract: A power control unit includes a power device, a heat dissipation member disposed to face the power device with an insulating resin member interposed therebetween, and a plurality of plate-shaped bus bars each of which has one end connected to the power device, in which a plurality of input bus bars connected to an input terminal of the power device are provided as the bus bar, and at least one of the plurality of input bus bars is erected so that a direction along a plate width is aligned with a direction along a normal line of a surface of the heat dissipation member facing the power device, and is disposed with respect to the heat dissipation member with the insulating resin member interposed therebetween.

Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light, in this order. The protection film contains 50 at % or more of Rh. When a band-shaped gray scale image parallel to an interface between the protection film and the multilayer reflective film is obtained by imaging a cross section of the protection film with a transmission electron microscope (TEM) and a luminance profile of the gray scale image in a longitudinal direction of the gray scale image is created, a number of peaks of the luminance profile per 100 nm in the longitudinal direction of the gray scale image is 50 or more.

Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, the protection film, and the phase shift film being arranged in this order. The phase shift film contains at least one first element X1 selected from the first group consisting of ruthenium (Ru), iridium (Ir), platinum (Pt), palladium (Pd), and gold (Au), and at least one second element X2 selected from the second group consisting of oxygen (O), boron (B), carbon (C), and nitrogen (N). In the phase shift film, a chemical shift of a peak of 3d5/2 or a peak of 4f7/2 of the first element X1 observed by X-ray electron spectroscopy is less than 0.3 eV.

Abstract: A coating film has a lamination unit including a first layer and at least one of a second layer and a third layer. The first layer is a nitride or the like of a first material represented by (Cr1-a-b-cAla[Ni1-dZrd]bXc). X is at least one element selected from Ti, Nb, Si, B, W, and V. a, b, c, and d represent atomic concentrations. The second layer is a nitride or the like of the second material represented by (AlcCr1-e-fZf). Z is at least one element selected from Si, Y, and B. e and f represent atomic concentrations. The third layer is a nitride or the like of the third material represented by (AlgCr1-g).

Abstract: A power conversion device having a multi-phase converter in which a plurality of chopper circuits each including a switching element and a reactor connected to the switching element are connected in parallel is provided. The power conversion device includes a single current sensor that is provided on a primary side of the chopper circuit, and detects a phase current flowing through each of the reactors when the switching elements are in both an on state and an off state, and a drift current detection unit configured to detect a drift current of a phase current in the multi-phase converter on the basis of the phase current detected by the current sensor, wherein the current sensor detects a phase current such that directions of phase currents flowing through each of the reactors are the same as each other.