Patents by Inventor Takuma MINAMIYAMA

Takuma MINAMIYAMA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device using diamond
    Patent number: 9711638
    Abstract: A semiconductor device includes a MISFET having: a diamond substrate; a drift layer having a first layer with a first density for providing a hopping conduction and a second layer with a second density lower than the first density, and having a ? dope structure; a body layer on the drift layer; a source region in an upper portion of the body layer; a gate insulation film on a surface of the body layer; a gate electrode on a surface of the gate insulation film; a first electrode electrically connected to the source region and a channel region; and a second electrode electrically connected to the diamond substrate. The MISFET flows current in the drift layer in a vertical direction, and the current flows between the first electrode and the second electrode.
    Type: Grant
    Filed: November 25, 2014
    Date of Patent: July 18, 2017
    Assignee: DENSO CORPORATION
    Inventors: Kazuhiro Oyama, Toshiharu Makino, Masahiko Ogura, Hiromitsu Kato, Daisuke Takeuchi, Satoshi Yamasaki, Norio Tokuda, Takao Inokuma, Takuma Minamiyama
  • SEMICONDUCTOR DEVICE USING DIAMOND
    Publication number: 20160372590
    Abstract: A semiconductor device includes a MISFET having: a diamond substrate; a drift layer having a first layer with a first density for providing a hopping conduction and a second layer with a second density lower than the first density, and having a ? dope structure; a body layer on the drift layer; a source region in an upper portion of the body layer; a gate insulation film on a surface of the body layer; a gate electrode on a surface of the gate insulation film; a first electrode electrically connected to the source region and a channel region; and a second electrode electrically connected to the diamond substrate. The MISFET flows current in the drift layer in a vertical direction, and the current flows between the first electrode and the second electrode.
    Type: Application
    Filed: November 25, 2014
    Publication date: December 22, 2016
    Inventors: Kazuhiro OYAMA, Toshiharu MAKINO, Masahiko OGURA, Hiromitsu KATO, Daisuke TAKEUCHI, Satoshi YAMASAKI, Norio TOKUDA, Takao INOKUMA, Takuma MINAMIYAMA