Abstract: In a high-frequency module, a first chip includes one of a plurality of first acoustic wave resonators of a first filter a mounting substrate. A second chip includes one of a plurality of second acoustic wave resonators of a second filter. The second chip is on a side of the first chip opposite to the mounting substrate side. The first chip has a first main surface on the second chip side and a second main surface on the mounting substrate side. The second chip includes a third main surface on the first chip side and a fourth main surface on a side opposite to the first chip side. A first circuit element related to the first filter is on the second main surface side of the first chip. A second circuit element related to the second filter is disposed on the fourth main surface side of the second chip.

Abstract: A manufacturing method includes loading a substrate into a chamber, the substrate including oxide semiconductor; configuring a temperature in the chamber to a first temperature; supplying an oxidizing gas into the chamber; lowering the temperature in the chamber from the first temperature; stopping supplying the oxidizing gas into the chamber after lowering the temperature; and unloading the substrate from the chamber after the temperature in the chamber reaches a second temperature lower than the first temperature.

Abstract: A semiconductor device manufacturing method of embodiments includes: forming a first conductive film containing indium on a substrate; forming a first insulating film; forming a second conductive film; forming a second insulating film; forming an opening penetrating the second insulating film, the second conductive film, and the first insulating film to reach the first conductive film; forming a third insulating film in the opening so as to be in contact with bottom and side surfaces of the opening; removing the third insulating film at a bottom of the opening to expose the first conductive film at the bottom of the opening; performing a first treatment using a first gas containing silicon or a second treatment using a second gas containing oxygen; and forming a semiconductor film in the opening without exposing the substrate to an atmosphere with a pressure equal to or more than atmospheric pressure.

Abstract: A method of manufacturing a semiconductor composite device includes picking up a composite integrated film from a formation substrate having a formation surface, the composite integrated film being in advance formed on the formation substrate; and bonding in a first bonding process the composite integrated film to a substrate front surface of a circuit board. The composite integrated film includes a base member thin film having a base member first surface and a base member second surface facing each other, one or more penetration parts each penetrating the base member thin film, one or more electrodes each including an electrode surface in a planar shape formed on the base member second surface's side, and an element disposed on the base member first surface. In the first bonding process, the base member second surface of the composite integrated film is bonded to the substrate front surface.

Abstract: A substrate is held in a horizontal attitude by a substrate holder. At a processing position, a lower surface of the substrate held by the substrate holder is cleaned by a lower-surface brush. The lower-surface brush is cleaned by a brush cleaner at a waiting position that overlaps with the substrate held by the substrate holder in an up-and-down direction and is below a processing position. The lower-surface brush is lifted and lowered by a lower-surface brush lifting-lowering driver between the processing position and the waiting position.

Abstract: A radio frequency module includes a mounting board, a first acoustic wave filter including a first support disposed at a first main surface of the mounting board, a second acoustic wave filter including a second support disposed on the first acoustic wave filter, and a shield electrode. The shield electrode covers at least a part of the resin layer. The first acoustic wave filter and the second acoustic wave filter pass signals to perform simultaneous communication. A main surface of the second acoustic wave filter on an opposite side from a first acoustic wave filter side is in contact with the shield electrode. A ground electrode of the mounting board is connected to a functional electrode of the first acoustic wave filter.

Abstract: A substrate cleaning device includes an upper holding device. The upper holding device holds a substrate in a horizontal attitude without rotating the substrate, while being in contact with an outer peripheral end of the substrate. A lower-surface brush wetted with a cleaning liquid is pressed against a lower-surface center region of the substrate held by the upper holding device. In this state, the lower-surface brush is rotated or moved with respect to the lower-surface center region of the substrate. Thus, the lower-surface center region of the substrate is cleaned.

Abstract: A substrate processing apparatus includes a substrate holder that holds an outer peripheral end of a substrate, a processor that processes a front surface or a back surface of the substrate, and a holding controller that controls the substrate holder such that a center portion of the substrate is displaced in an upward direction or a downward direction in a period during which the substrate is processed by the processor.

Abstract: A substrate cleaning device includes a pair of upper holding devices that hold an outer peripheral end of a substrate, a lower-surface brush that comes into contact with a lower surface of the substrate to clean the lower surface of the substrate and a control device that changes an uplift force for uplifting the lower-surface brush in a period during which the lower-surface brush cleans a lower-surface center region of the substrate.

Abstract: A substrate cleaning device includes a substrate holder, a lower-surface brush, a first liquid nozzle and a second liquid nozzle. The substrate holder holds a substrate in a horizontal attitude. The lower-surface brush is configured to be movable between a processing position for cleaning of the substrate and a waiting position that overlaps with the substrate held by the substrate holder in an up-and-down direction. Further, the lower-surface brush is configured to be rotatable about an axis extending in the up-and-down direction. The lower-surface brush cleans a lower surface of the substrate by coming into contact with the lower surface of the substrate. The first liquid nozzle discharges a cleaning liquid to a center portion of the lower-surface brush, at a waiting position. The second liquid nozzle discharges a cleaning liquid to an end portion of the lower-surface brush, at the waiting position.

Abstract: A cleaner comes into contact with a lower-surface center region of a substrate held by a first holder, so that the lower-surface center region is cleaned. The cleaner comes into contact with a lower-surface outer region of the substrate rotated by a second holder, so that the lower-surface outer region of the substrate is cleaned. During cleaning of the lower-surface center region, the second holder is rotated about a vertical axis while not holding the substrate. Alternatively, during cleaning of the lower-surface center region, the gas injector arranged between the cleaner and the second holder injects gas toward the substrate from a first height spaced apart from the substrate by a predetermined distance. Further, during drying of the lower-surface center region, the gas injector injects gas toward the substrate from a second height closer to the substrate than the first height.

Abstract: A lower-surface center region of a substrate held by a first holder is cleaned by a cleaner. A lower-surface outer region of the substrate rotated by a second holder is cleaned by the cleaner. A mobile base provided with the second holder and the cleaner is moved in a horizontal plane such that a reference position of the first holder coincides with a center axis of the second holder in a plan view when the substrate is received and transferred between the first holder and the second holder, and is moved in the horizontal plane such that the cleaner overlaps with the lower-surface center region of the substrate held by the first holder and a center axis of the cleaner coincides with a first portion different from a center of the substrate in the plan view when the lower-surface center region is cleaned.

Abstract: An upper holding device holds a substrate in a horizontal attitude without rotating the substrate. A lower holding device rotates a substrate while holding the substrate by suction. A substrate held by the upper holding device is cleaned with use of a cleaning liquid, and a substrate held by the lower holding device is cleaned with use of a cleaning liquid. Gas in a processing space is exhausted by exhaust equipment of a factory through an exhaust system. When a substrate is held by the upper holding device, gas in the processing space is not exhausted or gas in the processing space is exhausted at a first flow rate. Gas in the processing space is exhausted at a second or third flow rate that is higher than the first flow rate when the substrate is held by the lower holding device.

Abstract: A substrate alignment device includes first and second support members that are arranged to be opposite to each other and be spaced apart from each other in a plan view, and respectively support an outer peripheral end of a substrate from a position below the substrate. Further, the substrate alignment device includes a first pressing member that is arranged to be opposite to the first support member in a plan view, and moves the substrate by pressing one portion of the outer peripheral end of the substrate in a first direction directed from the second support member toward the first support member with the substrate supported by the first and second support members. The first support member includes a movement limiter that limits movement of the substrate in the first direction past a predetermined prescribed position.

Abstract: A cleaner comes into contact with a lower-surface center region of a substrate held by a first holder, so that the lower-surface center region is cleaned. The cleaner comes into contact with a lower-surface outer region of the substrate rotated by a second holder, so that the lower-surface outer region of the substrate is cleaned. During cleaning of the lower-surface center region, the second holder is rotated about a vertical axis while not holding the substrate. Alternatively, during cleaning of the lower-surface center region, the gas injector arranged between the cleaner and the second holder injects gas toward the substrate from a first height spaced apart from the substrate by a predetermined distance. Further, during drying of the lower-surface center region, the gas injector injects gas toward the substrate from a second height closer to the substrate than the first height.

Abstract: A lower-surface center region of a substrate held by a first holder is cleaned by a cleaner. A lower-surface outer region of the substrate rotated by a second holder is cleaned by the cleaner. A mobile base provided with the second holder and the cleaner is moved in a horizontal plane such that a reference position of the first holder coincides with a center axis of the second holder in a plan view when the substrate is received and transferred between the first holder and the second holder, and is moved in the horizontal plane such that the cleaner overlaps with the lower-surface center region of the substrate held by the first holder and a center axis of the cleaner coincides with a first portion different from a center of the substrate in the plan view when the lower-surface center region is cleaned.

Abstract: A substrate is held in a horizontal attitude by a substrate holder. At a processing position, a lower surface of the substrate held by the substrate holder is cleaned by a lower-surface brush. The lower-surface brush is cleaned by a brush cleaner at a waiting position that overlaps with the substrate held by the substrate holder in an up-and-down direction and is below a processing position. The lower-surface brush is lifted and lowered by a lower-surface brush lifting-lowering driver between the processing position and the waiting position.

Abstract: A first cleaner cleans an upper surface of a substrate by scanning above the substrate to pass through a first point in an outer edge of the substrate in a plan view. A second cleaner cleans an outer peripheral end of the substrate by coming into contact with a second point in the outer edge of the substrate in a plan view. A virtual first straight line passing through the first point and the second point and a virtual second straight line passing through a center of the substrate and is parallel to the first straight line are defined. A third cleaner is arranged below the substrate and opposite to the first cleaner and the second cleaner with the second straight line located between the third cleaner, and the first cleaner and the second cleaner, and cleans a lower surface of the substrate.

Abstract: A fluorescent member according to present invention is composed of a sintered body for wavelength conversion containing a matrix containing magnesium oxide and magnesium hydroxide as main components, and phosphor particles dispersed in the matrix. A thermal conductivity of the fluorescent member is preferably 5 W/(m·K) or higher. A fluorescent member having both a satisfactory thermal conductivity and a satisfactory fluorescent property is provided without requiring a high-temperature sintering process (a high-temperature process at a temperature higher than 250° C.). Further, a method for manufacturing such a fluorescent member and a light-emitting apparatus using such a fluorescent member are provided.

Abstract: The purpose of the present invention is to achieve an in-situ observation of structural change in a shear field of slurry, i.e. an evaluation of a rheology property of slurry containing raw materials of a ceramic as a fluid sample, together with an in-situ observation of internal structure of the fluid sample in an evaluation process, and a clarification of internal structural change.