Patents by Inventor Takuma Takimoto

Takuma Takimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11004974
    Abstract: A semiconductor structure includes a source region, a drain region, a channel region located between the source region and the drain region, a gate stack structure including a gate dielectric and a gate electrode that overlies the gate dielectric, such that a first gap region is present between an area of the source region and an area of the gate electrode in a plan view and a second gap region is present between an area of the drain region and the area of the gate electrode in the plan view, a contact-level dielectric layer overlying the source region and the drain region and laterally surrounding the gate stack structure, and at least one assist-field metallic plate located vertically above a top surface of the gate electrode and having an areal overlap with at least one of the first gap region and the second gap region in the plan view.
    Type: Grant
    Filed: February 14, 2020
    Date of Patent: May 11, 2021
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventor: Takuma Takimoto