Abstract: A semiconductor laminate film includes a silicon substrate and a semiconductor layer formed on the silicon substrate and containing silicon and germanium. The semiconductor layer having a surface roughness Rms of 1 nm or less. Further, the semiconductor layer satisfies the following relationship t?0.881×x?4.79 where t represents a thickness (nm) of the semiconductor layer, and x represents a ratio of the number of germanium atoms to a sum of the number of silicon atoms and the number of germanium atoms in the semiconductor layer. Also, the semiconductor layer being a mixed crystal semiconductor layer containing silicon and germanium.

Abstract: A method of producing a semiconductor laminate film includes forming a semiconductor layer containing silicon and germanium on a silicon substrate by a sputtering method. In the sputtering method, a film formation temperature of the semiconductor layer is less than 500° C., and a film formation pressure of the semiconductor layer ranges from 1 mTorr to 11 mTorr, or, a film formation temperature of the semiconductor layer is less than 600° C., and a film formation pressure of the semiconductor layer is equal to or more than 2 mTorr and less than 5 mTorr. The sputtering method uses a sputtering gas having a volume ratio of a hydrogen gas of less than 0.1%, and the semiconductor layer satisfies a relationship of t?0.881×x?4.79, where t represents a thickness (nm) of the semiconductor layer, and x represents a ratio of the number of germanium atoms to a sum of the number of silicon atoms and the number of germanium atoms in the semiconductor layer.

Abstract: A semiconductor laminate film includes a silicon substrate and a semiconductor layer formed on the silicon substrate and containing silicon and germanium. The semiconductor layer having a surface roughness Rms of 1 nm or less. Further, the semiconductor layer satisfies the following relationship t?0.881×x?4.79 where t represents a thickness (nm) of the semiconductor layer, and x represents a ratio of the number of germanium atoms to a sum of the number of silicon atoms and the number of germanium atoms in the semiconductor layer. Also, the semiconductor layer being a mixed crystal semiconductor layer containing silicon and germanium.

Abstract: A method of producing a semiconductor laminate film includes forming a semiconductor layer containing silicon and germanium on a silicon substrate by a sputtering method. In the sputtering method, a film formation temperature of the semiconductor layer is less than 500° C., and a film formation pressure of the semiconductor layer ranges from 1 mTorr to 11 mTorr, or, a film formation temperature of the semiconductor layer is less than 600° C., and a film formation pressure of the semiconductor layer is equal to or more than 2 mTorr and less than 5 mTorr. The sputtering method uses a sputtering gas having a volume ratio of a hydrogen gas of less than 0.1%, and the semiconductor layer satisfies a relationship of t?0.881×x?4.79, where t represents a thickness (nm) of the semiconductor layer, and x represents a ratio of the number of germanium atoms to a sum of the number of silicon atoms and the number of germanium atoms in the semiconductor layer.

Abstract: A moving body position detection system including an unit acquiring dead reckoning navigation information including a moving body direction; a unit identifying a moving body position based on the dead reckoning navigation information on the moving body; a unit predicting a predicted arrived position of the moving body after a predetermined interval from the position of the moving body based on the dead reckoning navigation information on the moving body; a unit calculating a difference direction angle between a direction from the position of the moving body to the predicted position and the direction of the moving body; a unit correcting the difference direction angle if it is equal to or larger than a threshold; and a unit updating the moving body position based on the difference direction angle.

Abstract: A moving body position detection system including a unit that acquires dead reckoning navigation information on a moving body; a unit that identifies a position on the moving body on a link based on the dead reckoning navigation information on the moving body; a unit that acquires current position link data on a current position link and neighboring link data on a neighboring link. The current position link is a link on which the moving body position is located, and the neighboring link is connected to the current position link. The system also includes a unit that compares the dead reckoning navigation information on the moving body with the current position link data and with the neighboring link data; and a unit that updates the position of the moving body based on a comparison result of the comparison unit.

Abstract: A moving body position detection system including a unit that acquires dead reckoning navigation information on a moving body; a unit that identifies a position on the moving body on a link based on the dead reckoning navigation information on the moving body; a unit that acquires current position link data on a current position link and neighboring link data on a neighboring link. The current position link is a link on which the moving body position is located, and the neighboring link is connected to the current position link. The system also includes a unit that compares the dead reckoning navigation information on the moving body with the current position link data and with the neighboring link data; and a unit that updates the position of the moving body based on a comparison result of the comparison unit.

Abstract: A moving body position detection system including an unit acquiring dead reckoning navigation information including a moving body direction; a unit identifying a moving body position based on the dead reckoning navigation information on the moving body; a unit predicting a predicted arrived position of the moving body after a predetermined interval from the position of the moving body based on the dead reckoning navigation information on the moving body; a unit calculating a difference direction angle between a direction from the position of the moving body to the predicted position and the direction of the moving body; a unit correcting the difference direction angle if it is equal to or larger than a threshold; and a unit updating the moving body position based on the difference direction angle.