Abstract: A substrate processing apparatus includes a processing tub configured to perform an etching processing therein by immersing multiple substrates in a processing liquid; a first and second discharge opening groups disposed under the substrates within the processing tub, and configured to discharge the processing liquid into the processing tub; a first adjusting device configured to change a flow rate of the processing liquid discharged from the first discharge opening group; a second adjusting device configured to change a flow rate of the processing liquid discharged from the second discharge opening group; a controller configured to control the first and second adjusting devices to perform, during the etching processing, a flow rate adjusting processing of increasing and decreasing the flow rate of the processing liquid discharged from the first discharge opening group and the flow rate of the processing liquid discharged from the second discharge opening group to different values.

Abstract: A substrate processing method includes preparing a phosphoric acid processing liquid, etching a substrate and increasing a concentration of the precipitation inhibitor. The phosphoric acid processing liquid is prepared by supplying a precipitation inhibitor into a phosphoric acid aqueous solution. The substrate having a silicon oxide film and a silicon nitride film is etched by immersing the substrate in a processing tub. The concentration of the precipitation inhibitor is increased by additionally supplying the precipitation inhibitor into the phosphoric acid processing liquid when a number of substrates etched has reached a first threshold value or when a silicon concentration in the phosphoric acid processing liquid has reached a second threshold value. The etching of the substrate comprises etching a new substrate by immersing the new substrate in the processing tub in which the phosphoric acid processing liquid with the increased concentration of the precipitation inhibitor is stored.

Abstract: A substrate processing apparatus includes a substrate processing unit and a controller. The substrate processing unit is configured to perform an etching processing on one or more substrates each having a silicon nitride film and a silicon oxide film on a surface thereof with a processing liquid containing a phosphoric acid aqueous solution and a silicic acid compound. The controller is configured to control individual components of the substrate processing apparatus. The controller includes a concentration control unit configured to control a phosphoric acid concentration of the processing liquid such that etching selectivity of the silicon nitride film with respect to the silicon oxide film falls within a given range from a beginning of the etching processing to an end thereof.

Abstract: A substrate processing apparatus includes a substrate processing unit and a controller. The substrate processing unit is configured to perform an etching processing on one or more substrates each having a silicon nitride film and a silicon oxide film on a surface thereof with a processing liquid containing a phosphoric acid aqueous solution and a silicic acid compound. The controller is configured to control individual components of the substrate processing apparatus. The controller includes a correction unit configured to correct a phosphoric acid concentration of the processing liquid such that etching selectivity of the silicon nitride film with respect to the silicon oxide film becomes constant at a given value from a beginning of the etching processing to an end thereof.

Abstract: Substrates can be suppressed from being separated from supporting grooves. A substrate processing apparatus includes a substrate holding unit and a processing tub. The substrate holding unit is configured to hold multiple substrates. The processing tub is configured to store a processing liquid therein. The substrate holding unit comprises a supporting body, an elevating device and a restriction unit. The supporting body has multiple supporting grooves and is configured to support the multiple substrates with a vertically standing posture from below in the multiple supporting grooves, respectively. The elevating device is configured to move the supporting body between a standby position above the processing tub and a processing position within the processing tub. The restriction unit is configured to be moved up and down along with the supporting body by the elevating device and configured to restrict an upward movement of the substrates with respect to the supporting body.

Abstract: A device includes a processor configured to: classify arithmetic processing devices that executes tasks in parallel by distributing loads into arithmetic processing device groups; select a representative arithmetic processing device; notify the representative arithmetic processing device of identification information of other arithmetic processing devices of an arithmetic processing device group to which the representative arithmetic processing device belongs; instruct the representative arithmetic processing device to acquire information regarding tasks to be executed by the arithmetic processing devices of the arithmetic processing device group from a first task list, and to generate a second task list; notify each other arithmetic processing devices of identification information of the representative arithmetic processing device; and instruct each other arithmetic processing device to acquire information regarding tasks to be executed by the representative arithmetic processing device and each other arithm

Abstract: An arithmetic processing apparatus includes a plurality of processing circuits each configured to execute processing of a predetermined number of tasks, and each of the plurality of processing circuits: predicts, when there is an unprocessed task in another processing circuit at completion of processing of the predetermined number of tasks, a processing time of an unprocessed task for each processing circuit, and transfers at least one of tasks from a processing circuit that has a longest predicted processing time and has a predicted processing time equal to or larger than a threshold value to an own processing circuit to execute processing.

Abstract: A recording medium stores a program for causing a computer to execute process including: incrementing a counter when a CISC instruction is converted into a RISC instruction; updating conversion timing of a register used for conversion with a value of the counter; recording a difference before and after update of conversion timing as an interval; selecting a register number from among register numbers that have a same interval condition, and updating the use register number with a selected register number; saving data for a register indicated by the updated use register number and generating an instruction for reading data of a memory operand; when a CISC instruction before conversion does not include the use register number, generating an instruction for reading data of a memory operand without restoring and saving data for a register indicated by the use register number; and generating the RISC instruction equivalent to the CISC instruction.

Abstract: A substrate processing method includes etching a substrate having a first film and a second film at a first etching rate; changing an etching rate from the first etching rate to a second etching rate; and etching the substrate at the second etching rate.

Abstract: A recording medium stores a program for causing a computer to execute processing including: incrementing a counter every time translating a CISC instruction into a RISC instruction; updating previously referenced translation timing of a register to be used for translation with a value of the counter; in a case where a use register number that stores a register number to be used for translation of the memory operand is an initial value, selecting the register number, and updating the use register number to the selected register number; in a case where the use register number is not the initial value, and when the use register number is not used, skipping data restoration and data saving for the register of the use register number, and generating an instruction to read data of the memory operand by using the register; and generating the RISC instruction equivalent to the CISC instruction.

Abstract: The purpose of the present invention is to provide a sandwich structure that has both excellent heat dissipation properties and excellent mechanical properties. In order to achieve this purpose, the sandwich structure of the present invention has the following structure. The sandwich structure includes a core member (I), and a fiber reinforced member (II) disposed on both sides of the core member (I), wherein the core member (I) includes a sheet-shaped heat conductive member (III) having an in-plane thermal conductivity of 300 W/m.K or more.

Abstract: The purpose of the present invention is to provide a thermal conductor achieving both excellent light weight and excellent rigidity and also having excellent heat dissipation property. In order to achieve the above object, the thermal conductor according to the present invention has the following configuration. That is, a thermal conductor in which a sheet-shaped thermal conductive material (II) having an in-plane thermal conductivity of 300 W/m·K or more is contained in a porous structure (I) configured of reinforcing fibers and a resin.

Abstract: A recording medium recording an appearance frequency calculation program for causing an information processing apparatus to execute processing includes: construction processing of constructing thread groups each including threads; acquisition processing in which the thread group acquires a data group including a same number of pieces of data as a number of threads constituting the thread group, each thread being responsible for one piece of data of the data group; and addition processing in which the thread adds one to a first storage area that stores an appearance frequency of a first numerical value, and a duplication number indicating a number of duplication is added to the first storage area when the own thread is a representative thread that is present alone in the thread group that is responsible for the data of the first numerical value when the first numerical value is duplicated in the data group.

Abstract: A substrate processing method includes preparing a phosphoric acid processing liquid, etching a substrate and increasing a concentration of the precipitation inhibitor. The phosphoric acid processing liquid is prepared by supplying a precipitation inhibitor into a phosphoric acid aqueous solution. The substrate having a silicon oxide film and a silicon nitride film is etched by immersing the substrate in a processing tub. The concentration of the precipitation inhibitor is increased by additionally supplying the precipitation inhibitor into the phosphoric acid processing liquid when a number of substrates etched has reached a first threshold value or when a silicon concentration in the phosphoric acid processing liquid has reached a second threshold value. The etching of the substrate comprises etching a new substrate by immersing the new substrate in the processing tub in which the phosphoric acid processing liquid with the increased concentration of the precipitation inhibitor is stored.

Abstract: Substrates can be suppressed from being separated from supporting grooves. A substrate processing apparatus includes a substrate holding unit and a processing tub. The substrate holding unit is configured to hold multiple substrates. The processing tub is configured to store a processing liquid therein. The substrate holding unit comprises a supporting body, an elevating device and a restriction unit. The supporting body has multiple supporting grooves and is configured to support the multiple substrates with a vertically standing posture from below in the multiple supporting grooves, respectively. The elevating device is configured to move the supporting body between a standby position above the processing tub and a processing position within the processing tub. The restriction unit is configured to be moved up and down along with the supporting body by the elevating device and configured to restrict an upward movement of the substrates with respect to the supporting body.

Abstract: Substrates can be suppressed from being separated from supporting grooves. A substrate processing apparatus includes a substrate holding unit and a processing tub. The substrate holding unit is configured to hold multiple substrates. The processing tub is configured to store a processing liquid therein. The substrate holding unit includes a supporting body, an elevating device and a restriction unit. The supporting body has multiple supporting grooves and is configured to support the multiple substrates with a vertically standing posture from below in the multiple supporting grooves, respectively. The elevating device is configured to move the supporting body between a standby position above the processing tub and a processing position within the processing tub. The restriction unit is configured to be moved up and down along with the supporting body by the elevating device and configured to restrict an upward movement of the substrates with respect to the supporting body.

Abstract: A recording medium recording an appearance frequency calculation program for causing an information processing apparatus to execute processing includes: construction processing of constructing thread groups each including threads; acquisition processing in which the thread group acquires a data group including a same number of pieces of data as a number of threads constituting the thread group, each thread being responsible for one piece of data of the data group; and addition processing in which the thread adds one to a first storage area that stores an appearance frequency of a first numerical value, and a duplication number indicating a number of duplication is added to the first storage area when the own thread is a representative thread that is present alone in the thread group that is responsible for the data of the first numerical value when the first numerical value is duplicated in the data group.

Abstract: A non-transitory computer-readable recording medium stores a trading program far causing a computer to execute a process including: acquiring a number of sell orders for each of sell limits and a number of buy orders for each of buy limits; executing one of pairings of one of the sell orders and one of the buy orders in which one of the sell limits of the one of the sell orders is equal to or lower than one of the buy limits of the one of the buy orders, among the pairings of the sell orders and the buy orders, based on the acquired number of the sell orders for each of the sell limits and the acquired number of the buy orders for each of the buy limits; and resolving an execution price for each of executions.

Abstract: A substrate processing apparatus includes: a processing container, a mixing device, a liquid feeding path, and a controller. The processing container processes a substrate by immersing the substrate in a processing liquid. The mixing device mixes a phosphoric acid aqueous solution and an additive, to produce a mixed liquid to be used as a raw material of the processing liquid. The liquid feeding path feeds the mixed liquid from the mixing device to the processing container. The controller controls the substrate processing apparatus. The controller performs a control to feed the mixed liquid from the mixing device to the processing container in which the substrate is immersed, after a phosphoric acid concentration of the mixed liquid is regulated from a first concentration to a second concentration higher than the first concentration. The first concentration is a concentration when the phosphoric acid aqueous solution is supplied to the mixing device.

Abstract: A substrate processing apparatus includes a processing tub configured to perform an etching processing therein by immersing multiple substrates in a processing liquid; a first and second discharge opening groups disposed under the substrates within the processing tub, and configured to discharge the processing liquid into the processing tub; a first adjusting device configured to change a flow rate of the processing liquid discharged from the first discharge opening group; a second adjusting device configured to change a flow rate of the processing liquid discharged from the second discharge opening group; a controller configured to control the first and second adjusting devices to perform, during the etching processing, a flow rate adjusting processing of increasing and decreasing the flow rate of the processing liquid discharged from the first discharge opening group and the flow rate of the processing liquid discharged from the second discharge opening group to different values.