Abstract: A plasma processing apparatus includes a chamber, a bias power supply, a substrate support configured to support a substrate and an edge ring in the chamber, a plurality of first impedance adjusting mechanisms, and an electrical path. The substrate support includes a first region configured to support the substrate, a second region provided around the first region and configured to support the edge ring, a first bias electrode provided in the first region, a plurality of first impedance adjusting electrodes provided in the first region and grounded, and a second bias electrode provided in the second region. The plurality of first impedance adjusting mechanisms are configured to be respectively connected to the plurality of first impedance adjusting electrodes. The electrical path is configured to connect the bias power supply, the first bias electrode, and the second bias electrode.