Abstract: A solid-state battery is provided that allows the exterior can to be sufficiently crimped onto the seal can without leading to improper crimping, thus preventing entry of water from the outside. The solid-state battery 1 includes an exterior can 2, a seal can 3, facing the exterior can 2 and a power generation element 4 contained in the space between the exterior can 2 and seal can 3. The seal can 3 includes a flat portion 31 and a peripheral wall 32 that are contiguous to each other with a curved-surface portion 33 provided therebetween. A first clearance g1 is defined between the upper edge of the outer peripheral surface of the power generation element 4 and the border 10 between the inner surface of the flat portion 31 and the inner surface of the curved-surface portion 33, the first clearance having a radial dimension not larger than 2.0 mm at a position where its dimension is at its largest.

Abstract: An all-solid-state battery 1 includes: an exterior can 2 having a bottom 21 and a cylindrical side wall 22; a negative-electrode can 3 having a flat portion 31 and a peripheral wall 32; a power generation element 4 located between the exterior can 2 and the negative-electrode can 3; a gasket 6 positioned between the cylindrical side wall 22 and peripheral wall 32; and recoverable conductive sheets 5. The bottom 21 of the exterior can 2 includes a recessed portion 211 recessed toward the outside. A recoverable conductive sheet 5 is located between the power generation element 4 and the inner bottom surface of the recessed portion 211, and another recoverable conductive sheet is located between the power generation element 4 and the flat portion 31 of the seal can 3.

Abstract: A method of manufacturing a nitride semiconductor light-emitting element configured to emit deep ultraviolet light includes: providing a semiconductor structure comprising: an n-side semiconductor layer comprising an n-side contact layer comprising aluminum, gallium, and nitrogen, a p-side semiconductor layer, and an active layer between the n-side semiconductor layer and the p-side semiconductor layer; forming an n-side electrode, which comprises forming, successively from an n-side contact layer side: a first layer located above the n-side contact layer and comprising a titanium layer, a second layer located above the first layer and comprising a silicon-containing aluminum alloy layer, and a third layer located above the second layer and comprising a tantalum layer and/or a tungsten layer; and heating the n-side electrode.

Abstract: A semiconductor light-emitting element includes a semiconductor structure including an n-side semiconductor layer including a first region, a second region located on an outer periphery of the first region, and a plurality of third regions surrounded by the first region in a plan view, a light-emitting layer disposed on the first region, and a p-side semiconductor layer disposed on the light-emitting layer; a first insulating film disposed on the semiconductor structure and defining a plurality of first openings, each located above a corresponding one of the plurality of third regions and a plurality of second openings located above the p-side semiconductor layer; an n-side electrode disposed on the first insulating film and electrically connected to the n-side semiconductor layer through the plurality of first openings; at least one n-pad electrode disposed in the second region and electrically connected to the n-side electrode; a second insulating film disposed on the first insulating film and defining a pl

Abstract: A method of manufacturing a nitride semiconductor light-emitting element configured to emit deep ultraviolet light includes: providing a semiconductor structure comprising: an n-side semiconductor layer comprising an n-side contact layer comprising aluminum, gallium, and nitrogen, a p-side semiconductor layer, and an active layer between the n-side semiconductor layer and the p-side semiconductor layer; forming an n-side electrode, which comprises forming, successively from an n-side contact layer side: a first layer located above the n-side contact layer and comprising a titanium layer, a second layer located above the first layer and comprising a silicon-containing aluminum alloy layer, and a third layer located above the second layer and comprising a tantalum layer and/or a tungsten layer; and heating the n-side electrode.

Abstract: A light emitting element includes: a semiconductor structure including an n-side layer, a p-side layer, and an active layer, each being made of a nitride semiconductor, wherein the active layer is positioned between the n-side layer and the p-side layer and is configured to emit ultraviolet light; an n-electrode electrically connected to the n-side layer; and a p-electrode comprising a first metal layer in contact with the p-side layer and electrically connected to the p-side layer. The p-side layer comprises a first layer, a second layer disposed on the first layer, and a third layer disposed on the second layer, each containing a p-type impurity. A surface of the second layer includes an exposed region that is exposed from the third layer. The first layer and the second layer contain Al.

Abstract: The all-solid-state battery 1 includes: an exterior can 2 with a bottom 21; a seal can 3 having a flat portion 31 and facing the exterior can 2; and a power generation element 4 contained between the exterior can 2 and seal can 3, where at least one of the inner surface of the bottom 21 of the exterior can 2 and the inner surface of the flat portion 31 of the seal can 3 includes a recess-protrusion structure. The battery includes a conductive sheet 5 located between that one of the inner surfaces which includes the recess-protrusion structure and the power generation element 4, the conductive sheet having an ability to recover against a pressing force. The rate of recovery of the conductive sheet 5 against a pressing force is not lower than 7%.

Abstract: A solid-state battery is provided that allows the exterior can to be sufficiently crimped onto the seal can without leading to improper crimping, thus preventing entry of water from the outside. The solid-state battery 1 includes an exterior can 2, a seal can 3, facing the exterior can 2 and a power generation element 4 contained in the space between the exterior can 2 and seal can 3. The seal can 3 includes a flat portion 31 and a peripheral wall 32 that are contiguous to each other with a curved-surface portion 33 provided therebetween. A first clearance g1 is defined between the upper edge of the outer peripheral surface of the power generation element 4 and the border 10 between the inner surface of the flat portion 31 and the inner surface of the curved-surface portion 33, the first clearance having a radial dimension not larger than 2.0 mm at a position where its dimension is at its largest.

Abstract: A method of manufacturing a nitride semiconductor light-emitting element configured to emit deep ultraviolet light includes: providing a semiconductor structure comprising: an n-side semiconductor layer comprising an n-side contact layer comprising aluminum, gallium, and nitrogen, a p-side semiconductor layer, and an active layer between the n-side semiconductor layer and the p-side semiconductor layer; forming an n-side electrode, which comprises forming, successively from an n-side contact layer side: a first layer located above the n-side contact layer and comprising a titanium layer, a second layer located above the first layer and comprising a silicon-containing aluminum alloy layer, and a third layer located above the second layer and comprising a tantalum layer and/or a tungsten layer; and heating the n-side electrode.

Abstract: A method of manufacturing a nitride semiconductor light-emitting element configured to emit deep ultraviolet light includes: providing a semiconductor structure comprising: an n-side semiconductor layer comprising an n-side contact layer comprising aluminum, gallium, and nitrogen, a p-side semiconductor layer, and an active layer between the n-side semiconductor layer and the p-side semiconductor layer; forming an n-side electrode, which comprises forming, successively from an n-side contact layer side: a first layer located above the n-side contact layer and comprising a titanium layer, a second layer located above the first layer and comprising a silicon-containing aluminum alloy layer, and a third layer located above the second layer and comprising a tantalum layer and/or a tungsten layer; and heating the n-side electrode.

Abstract: A flat-shaped all-solid battery described in this application includes a battery container constituted by an outer can and a sealing can and a stack which a positive electrode, a solid electrolyte layer, and a negative electrode are stacked W form. The stack is housed in the battery container. A conducive porous member constituted by a molded body of graphite and having flexibility is disposed between the stack and an inner bottom surface of the outer can or an inner bottom surface of the sealing can. Moreover, in the above flat-shaped all-solid battery, the conductive porous member can be disposed between the stack and the inner bottom surface of the sealing can, and between the stack and the inner bottom surface of the outer can.

Abstract: A method of manufacturing a nitride semiconductor light-emitting element configured to emit deep ultraviolet light includes: providing a semiconductor structure comprising: an n-side semiconductor layer comprising an n-side contact layer comprising aluminum, gallium, and nitrogen, a p-side semiconductor layer, and an active layer between the n-side semiconductor layer and the p-side semiconductor layer; forming an n-side electrode, which comprises forming, successively from an n-side contact layer side: a first layer located above the n-side contact layer and comprising a titanium layer, a second layer located above the first layer and comprising a silicon-containing aluminum alloy layer, and a third layer located above the second layer and comprising a tantalum layer and/or a tungsten layer; and heating the n-side electrode.

Abstract: A nitride semiconductor light emitting element configured to emit deep ultraviolet light, the light emitting element comprises: an n-side contact layer comprising Al, Ga, and N; and an n-electrode disposed on the contact layer, wherein the n-electrode comprises, successively from the n-side contact layer side, a first layer consisting essentially of Ti, a second layer consisting essentially of a Si-containing Al alloy, and a third layer comprising at least one of a layer consisting essentially of Ta and/or a layer consisting essentially of W.

Abstract: A nitride semiconductor light emitting element configured to emit deep ultraviolet light, the light emitting element comprises: an n-side contact layer comprising Al, Ga, and N; and an n-electrode disposed on the contact layer, wherein the n-electrode comprises, successively from the n-side contact layer side, a first layer consisting essentially of Ti, a second layer consisting essentially of a Si-containing Al alloy, and a third layer comprising at least one of a layer consisting essentially of Ta and/or a layer consisting essentially of W.

Abstract: A non-aqueous electrolyte primary battery of the present invention includes: a negative electrode; a positive electrode; a separator; and a non-aqueous electrolyte. The negative electrode contains metallic lithium or a lithium alloy. The positive electrode contains a manganese oxide or a lithium-containing manganese oxide with a lithium content of 3.5% by mass or less. The non-aqueous electrolyte contains a phosphoric acid compound or a boric acid compound having in its molecule a group represented by General Formula (1) below, and the content of the phosphoric acid compound or the boric acid compound in the non-aqueous electrolyte is 8% by mass or less: where X is Si, Ge or Sn; R1, R2 and R3 independently represent an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, or an aryl group having 6 to 10 carbon atoms; and some or all of hydrogen atoms may be substituted with a fluorine atom.