Abstract: The present embodiment provides a material for forming an underlayer film for lithography, containing at least any of a compound represented by following formula (1) or a resin including a structural unit derived from a compound represented by the following formula (1), wherein R1 represents a 2n-valent group having 1 to 60 carbon atoms, or a single bond, each R2 independently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, a hydroxyl group, or a group where a hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, and may be the same or different in the same naphthalene ring or benzene ring, in which at least one R2 represents a group where a hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, n is an integer of 1 to 4, and structural formulae of n struct

Abstract: The present invention employs a compound represented by the following formula (0): wherein RY is a linear, branched, or cyclic alkyl group of 1 to 30 carbon atoms or an aryl group of 6 to 30 carbon atoms; RZ is an N-valent group of 1 to 60 carbon atoms or a single bond; each RT is independently an alkyl group of 1 to 30 carbon atoms optionally having a substituent, an aryl group of 6 to 40 carbon atoms optionally having a substituent, an alkenyl group of 2 to 30 carbon atoms optionally having a substituent, an alkoxy group of 1 to 30 carbon atoms optionally having a substituent, a halogen atom, a nitro group, an amino group, a cyano group, a thiol group, a hydroxy group, or a group in which a hydrogen atom of a hydroxy group is replaced with an acid dissociation group, wherein the alkyl group, the alkenyl group, and the aryl group each optionally contain an ether bond, a ketone bond, or an ester bond, wherein at least one RT is a hydroxy group or a group in which a hydrogen atom of a hydroxy group is

Abstract: The present invention provides a radiation-sensitive composition containing (A) a resist base material, (B) an optically active diazonaphthoquinone compound, and (C) a solvent, wherein the content of a solid component in the composition is within the range of 1 to 80% by mass, the content of the solvent is within the range of 20 to 99% by mass, and the resist base material (A) is a compound represented by a specific formula.

Abstract: The present invention provides a material for forming an underlayer film for lithography, containing at least any of a compound represented by following formula (1) or a resin including a structural unit derived from a compound represented by the following formula (1), wherein R1 represents a 2n-valent group having a 1 to 60 carbon atoms, or a single bond, each R2 independently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, or a hydroxyl group, and may be the same or different in the same naphthalene ring or benzene ring, n is an integer of 1 to 4, structural formulae of n's structural units in square brackets [ ] may be the same or different when n is an integer of 2 or more, X represents an oxygen atom, a sulfur atom, or an uncrosslinked state, each m2 is independently an integer of 0 to 7, in which at lea

Abstract: A material for lithography containing a tellurium-containing compound or a tellurium-containing resin, a production method therefor, a composition for lithography, a pattern formation method, a compound, a resin, and a method for purifying the compound or the resin.

Abstract: The present invention provides a resist base material containing a compound having a specific structure and/or a resin derived from the compound as a monomer.

Abstract: The present invention provides a compound represented by following formula (1), wherein R1 represents a 2n-valent group having 1 to 30 carbon atoms, each of R2 to R5 independently represents a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a halogen atom, a thiol group or a hydroxyl group, provided that at least one selected from R1 to R5 represents a group including an iodine atom and at least one R4 and/or at least one R5 represent/represents one or more selected from the group consisting of a hydroxyl group and a thiol group, each of m2 and m3 independently represents an integer of 0 to 8, each of m4 and m5 independently represents an integer of 0 to 9, provided that m4 and m5 do not represent 0 at the same time, n represents an integer of 1 to 4, and each of p2 to p5 independently represents an integer of 0 to 2.

Abstract: A radiation-sensitive composition comprising a resist base material (A), an optically active diazonaphthoquinone compound (B), and a solvent (C), wherein the content of the solvent (C) in the composition is 20 to 99% by mass, the content of components except for the solvent (C) is 1 to 80% by mass, and the resist base material (A) is a compound represented by the following formula (1): wherein R1 is a 2n-valent group of 1 to 30 carbon atoms; R2 to R5 are each independently an alkyl group of 1 to 10 carbon atoms, an aryl group of 6 to 10 carbon atoms, an alkenyl group of 2 to 10 carbon atoms, an alkoxy group of 1 to 30 carbon atoms, a halogen atom, a thiol group, or a hydroxyl group, wherein at least one of R4 and/or at least one of R5 is one or more kinds selected from a hydroxyl group and a thiol group; m2 and m3 are each independently an integer of 0 to 8; m4 and m5 are each independently an integer of 0 to 9, wherein m4 and m5 are not 0 at the same time; n is an integer of 1 to 4; and p2 to p5 are ea

Abstract: The resist composition of the present invention contains one or more selected from compounds represented by specific formulae and resins obtained using these as monomers.

Abstract: A radiation-sensitive composition comprising (A) a resist base material, (B) an optically active diazonaphthoquinone compound, and (C) a solvent, wherein in the radiation-sensitive composition, the content of a solid component is 1 to 80% by mass, the content of the solvent is 20 to 99% by mass, and the resist base material (A) is a compound represented by the formula (1):

Abstract: The present invention is a compound represented by the following general formula (1).

Abstract: A compound represented by the following formula (1). (in formula (1), R1 represents a 2n-valent group having 1 to 30 carbon atoms, R2 to R5 each independently represent an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group or a hydroxyl group, provided that at least one R4 and/or at least one R5 represents an alkoxy group having 1 to 30 carbon atoms, m2 and m3 are each independently an integer of 0 to 8, m4 and m5 are each independently an integer of 0 to 9, provided that m4 and m5 are not 0 at the same time, n is an integer of 1 to 4, and p2 to p5 are each independently an integer of 0 to 2.

Abstract: A compound represented by the following formula (1): wherein each X independently represents an oxygen atom or a sulfur atom, or non-crosslinking, R1 represents a single bond or a 2n-valent group having 1 to 30 carbon atoms, the group may have an alicyclic hydrocarbon group, a double bond, a hetero atom, or an aryl group having 6 to 30 carbon atoms, each R2 independently represents a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, an aryloxy group having 6 to 30 carbon atoms, or a hydroxyl group, in which at least one R2 represents an alkoxy group having 1 to 30 carbon atoms or an aryloxy group having 6 to 30 carbon atoms, each m is independently an integer of 1 to 6, each p is independently 0 or 1, and n is an integer of 1 to 4.

Abstract: The resist material according to the present invention contains a compound represented by the following formula (1): wherein each R0 is independently a monovalent group having an oxygen atom, a monovalent group having a sulfur atom, a monovalent group having a nitrogen atom, a hydrocarbon group, or a halogen atom; and each p is independently an integer of 0 to 4.

Abstract: A polymer compound including a unit structure represented by the following general formula (1): wherein m1 equals 1 to 8, n1 equals 0 to 7, m1+n1 equals 4 to 8, m2 equals 1 to 8, n2 equals 0 to 7, m2+n2 equals 4 to 8, m1 equals m2, y represents 0 to 2, R1 represents a hydroxy group, a substituted or unsubstituted straight, branched or cyclic alkyl group, a substituted or unsubstituted aryl group, or a halogen atom, R3 represents a hydrogen atom, a substituted or unsubstituted straight, branched or cyclic alkyl group, or a substituted or unsubstituted aryl group, each R2 independently represents any structure represented by general formula (2) in the specification, at least one R2 has an acid-dissociable site, and R5 represents a hydroxy group or —O—R2—O—*.

Abstract: A polymer compound including a unit structure represented by the general formula (1): wherein m1 and m2 each equal 1 to 8, n1 and n2 each equal 0 to 7, m1+n1 and m2+n2 each equal 4 to 8, y represents 0 to 2, R1 represents a hydroxy group; a substituted or unsubstituted straight, branched or cyclic alkyl group; a substituted or unsubstituted aryl group, or a halogen atom, R3 represents a hydrogen atom, a substituted or unsubstituted straight, branched or cyclic alkyl group, or a substituted or unsubstituted aryl group, R2 represents any structure represented by general formula (2) in the specification, at least one R2 has an acid-dissociable site, R5 represents a hydroxy group, —O—R2—O—* or —O—R2—O—R55, and R6 represents a hydroxy group or —O—R2—O—*.