Abstract: Training data including a first and second group of questions each associated with an answer is read into memory by a computer. A class of answers including the answer to a question for each question is determined, where each class of answers has a class label that is associated with each of the questions, and each of the questions are classified into a respective class of answers, accordingly. First and second training data is generated including the first and second groups of questions and corresponding classes of answers for use in first and second classifiers, respectively. Each question of the first and second group of questions is classified by the second and first classifiers, respectively, where the classifying generates corresponding classification results. The first or second training data is updated based on the classification results to generate corresponding updated first or second training data, respectively.

Abstract: Training data including a first and second group of questions each associated with an answer is read into memory by a computer. A class of answers including the answer to a question for each question is determined, where each class of answers has a class label that is associated with each of the questions, and each of the questions are classified into a respective class of answers, accordingly. First and second training data is generated including the first and second groups of questions and corresponding classes of answers for use in first and second classifiers, respectively. Each question of the first and second group of questions is classified by the second and first classifiers, respectively, where the classifying generates corresponding classification results. The first or second training data is updated based on the classification results to generate corresponding updated first or second training data, respectively.

Abstract: Training data including a first and second group of questions each associated with an answer is read into memory by a computer. A class of answers including the answer to a question for each question is determined, where each class of answers has a class label that is associated with each of the questions, and each of the questions are classified into a respective class of answers, accordingly. First and second training data is generated including the first and second groups of questions and corresponding classes of answers for use in first and second classifiers, respectively. Each question of the first and second group of questions is classified by the second and first classifiers, respectively, where the classifying generates corresponding classification results. The first or second training data is updated based on the classification results to generate corresponding updated first or second training data, respectively.

Abstract: A plasma source assembly for use with a processing chamber includes a blocker plate with at least one elongate slot through the blocker plate. The elongate slots can be have different lengths and angles relative to sides of the blocker plate.

Abstract: An apparatus for etching a dielectric layer contained by a substrate is provided. An etch reactor comprises a top electrode and a bottom electrode. An etch gas source supplies an etch gas into the etch reactor. A first Radio Frequency (RF) source generates a first RF power with a first frequency and supplies the first RF power into the etch reactor, whereas the first frequency is between 100 kilo Hertz (kHz) and 600 kHz. A second RF source generates a second RF power with a second frequency and supplies the second RF power into the etch reactor, whereas the second frequency is at least 10 mega Hertz (MHz).

Abstract: A method for etching features in a dielectric layer is provided. A mask is formed over the dielectric layer. A protective silicon-containing coating is formed on exposed surfaces of the mask. The features are etched through the mask and protective silicon-containing coating. The features may be partially etched before the protective silicon-containing coating is formed.

Abstract: An apparatus for etching a dielectric layer contained by a substrate is provided. An etch reactor comprises a top electrode and a bottom electrode. An etch gas source supplies an etch gas into the etch reactor. A first Radio Frequency (RF) source generates a first RF power with a first frequency and supplies the first RF power into the etch reactor, whereas the first frequency is between 100 kilo Hertz (kHz) and 600 kHz. A second RF source generates a second RF power with a second frequency and supplies the second RF power into the etch reactor, whereas the second frequency is at least 10 mega Hertz (MHz).

Abstract: An apparatus for etching a dielectric layer contained by a substrate is provided. An etch reactor comprises a top electrode and a bottom electrode. An etch gas source supplies an etch gas into the etch reactor. A first Radio Frequency (RF) source generates a first RF power with a first frequency and supplies the first RF power into the etch reactor, whereas the first frequency is between 100 kilo Hertz (kHz) and 600 kHz. A second RF source generates a second RF power with a second frequency and supplies the second RF power into the etch reactor, whereas the second frequency is at least 10 mega Hertz (MHz).

Abstract: A method for etching features in a dielectric layer is provided. A mask is formed over the dielectric layer. A protective silicon-containing coating is formed on exposed surfaces of the mask. The features are etched through the mask and protective silicon-containing coating. The features may be partially etched before the protective silicon-containing coating is formed.