Abstract: A charged-particle detecting device 108, 108a, 108b, 108c, 108d, 108e, 108f, 108g or a radiation detecting device 203 detects charged particles or radiation as a detection target. These detection devices are each provided with: a scintillator 109 provided with a fluorescent layer 109a that converts the detection target into light 112; a light detector 111, 111b that detects the light 112 emitted from the scintillator 109; a light guide 110, 117 provided between the scintillator 109 and the light detector 111, 111b; and a blocking part 113, 114 that blocks a portion of the detection target incident on the scintillator 109 or the light emitted from the scintillator 109.

Abstract: Provided are a charged particle detector and a radiation detector capable of obtaining an observation image with correct contrast without saturation even when the number of signal electrons incident on a detector is increased due to an increase in the current of a primary electron beam. The charged particle detector is characterized by having a scintillator (109) having a signal electron detection surface (109a) for detecting signal electrons emitted when a specimen is irradiated with primary electrons and converting the signal electrons into light, a light detector (111) having a light detection surface (111a) for detecting the light emitted from the scintillator (109), and a light guide (110) disposed between the scintillator (109) and the light detector (111), wherein the area of the light detection surface (111a) is larger than the area of the signal electron detection surface (109a).

Abstract: Provided is an MgB2 superconductive thin film wire material allowing for lower costs while maintaining superconductive properties that are equal to or greater than those of the MgB2 superconductive thin film wire material of prior art, and to provide a production method for the superconductive thin film wire material. The MgB2 superconductive thin film wire material according to the present invention is a superconductive wire material comprising an MgB2 thin film formed over an elongated metal base material, characterized in that the MgB2 thin film exhibits a critical temperature of 30 K or higher, and has a microscopic organization wherein MgB2 columnar crystal grains stand densely packed on the surface of the elongated metal base material, and a layer of Mg oxide is formed in such a manner as to surround the MgB2 columnar crystal grains in the grain boundary regions of the MgB2 columnar crystal grains.