Abstract: A capacitor element includes a lower conductive portion, an underlying film which covers the lower conductive portion, a lower electrode formed on the underling film, a capacitor insulating film including (i) a dielectric film formed on the lower electrode and (ii) a protective film formed on the dielectric film and having a lower etching rate than that of the dielectric film, and an upper electrode formed on the capacitor insulating film. The upper electrode and the lower conductive portion are electrically connected to each other through a connection portion exposed from the underlying film by partially removing the underlying film and the capacitor insulating film.

Abstract: An electro-optical device includes an insulating film having a tilted face, the tilted face sloping down toward inside of an opening area of a pixel arranged in a pixel area in plan view, and a pixel electrode that is disposed in the pixel on an upper layer side relative to the insulating film and is formed so as to include at least an area that overlaps the tilted face of the insulating film in plan view.

Abstract: An electro-optical device in which a plurality of thin films are laminated on a substrate and a transistor is formed by a part of the plurality of laminated thin films includes a light-shielding insulating layer that forms a part of the plurality of thin films and is laminated on the substrate so as to cover at least a part of a semiconductor layer of the transistor in plan view.

Abstract: There is provided an electro-optical device comprising, above a substrate, a first conductor layer, a second conductor layer, an interlayer insulating film formed between the first conductor layer and the second conductor layer, and a contact hole, provided in the interlayer insulating film, for electrically connecting the first conductor layer and the second conductor layer in a contact portion. The first conductor layer has a multilayered structure in which an electrolytic corrosion preventing film is provided on a conductor film, in a region including at least the contact portion among the entire region thereof, and the electrolytic corrosion preventing film is not provided in other regions thereof. Thus, an electrolytic corrosion can be prevented and a contact resistance can be reduced. Further, heat can be prevented from generating.

Abstract: An electro-optical device in which a plurality of thin films are laminated on a substrate and a transistor is formed by a part of the plurality of laminated thin films includes a light-shielding insulating layer that forms a part of the plurality of thin films and is laminated on the substrate so as to cover at least a part of a semiconductor layer of the transistor in plan view.

Abstract: An electro-optical device includes, above a substrate: data lines extending in a first direction; scanning lines extending in a second direction and intersecting the data lines; pixel electrodes and thin film transistors disposed so as to correspond to intersection regions of the data lines and the scanning lines; storage capacitors electrically connected to the thin film transistors and the pixel electrodes; and shielding layers disposed between the data lines and the pixel electrodes. Further, nitride films are included in the shielding layers and are formed along the data lines and are wider than the data lines.

Abstract: To display high quality images by preventing quality of images from deteriorating due to reverse tilt domains and reducing or preventing light leakage from being generated on images, an electro-optical device includes data lines, scanning lines, TFTs, and pixel electrodes on a substrate. Cutout portions are formed in parts of the pixel electrodes. First light-shielding films extend along at least one of the data lines and the scanning lines. Quadrangular portions formed of the same film as the first light-shielding films are formed in the first light-shielding films to reduce or prevent the light leakage due to the cutout portions.

Abstract: An electro-optical device includes, above a substrate: data lines extending in a first direction; scanning lines extending in a second direction and intersecting the data lines; pixel electrodes and thin film transistors disposed so as to correspond to intersection regions of the data lines and the scanning lines; storage capacitors electrically connected to the thin film transistors and the pixel electrodes; and shielding layers disposed between the data lines and the pixel electrodes. Further, nitride films are included in the shielding layers and are formed along the data lines and are wider than the data lines.

Abstract: An electro-optical device includes, above a substrate: data lines extending in a first direction; scanning lines extending in a second direction and intersecting the data lines; pixel electrodes and thin film transistors disposed so as to correspond to intersection regions of the data lines and the scanning lines; storage capacitors electrically connected to the thin film transistors and the pixel electrodes; and shielding layers disposed between the data lines and the pixel electrodes. Further, nitride films are included in the shielding layers and are formed along the data lines and are wider than the data lines.

Abstract: An electro-optical device includes: data lines extending in a first direction on a substrate; scanning lines extending in a second direction and intersecting with the data lines; pixel electrodes and thin film transistors disposed corresponding to intersections of the data lines and the scanning lines; storage capacitors electrically connected to the thin film transistors and the pixel electrodes; and a shielding layer disposed between the data lines and the pixel electrodes. One of a pair of electrodes forming the storage capacitor is formed of a multi-layered film containing a low resistance film.

Abstract: The invention provides a substrate device having thin film transistors (TFTs), each including a semiconductor layer and capacitors formed above the TFTs, that are provided on a substrate. Each of the capacitors can include a first electrode electrically connected to a part of the semiconductor layer, a second electrode arranged to face the first electrode, and a dielectric film including a nitride film arranged between the first electrode and the second electrode on the substrate. Further, the nitride film has an aperture facing the semiconductor layer as seen in plan view. Accordingly, it is possible to effectively hydrogenate the semiconductor layer using the aperture.

Abstract: There is provided an electro-optical device comprising, above a substrate, a first conductor layer, a second conductor layer, an interlayer insulating film formed between the first conductor layer and the second conductor layer, and a contact hole, provided in the interlayer insulating film, for electrically connecting the first conductor layer and the second conductor layer in a contact portion. The first conductor layer has a multilayered structure in which an electrolytic corrosion preventing film is provided on a conductor film, in a region including at least the contact portion among the entire region thereof, and the electrolytic corrosion preventing film is not provided in other regions thereof. Thus, an electrolytic corrosion can be prevented and a contact resistance can be reduced. Further, heat can be prevented from generating.

Abstract: An electro-optical device includes, above a substrate: data lines extending in a first direction; scanning lines extending in a second direction and intersecting the data lines; pixel electrodes and thin film transistors disposed so as to correspond to intersection regions of the data lines and the scanning lines; storage capacitors electrically connected to the thin film transistors and the pixel electrodes; and shielding layers disposed between the data lines and the pixel electrodes. Further, nitride films are included in the shielding layers and are formed along the data lines and are wider than the data lines.

Abstract: To display high quality images by preventing quality of images from deteriorating due to reverse tilt domains and reducing or preventing light leakage from being generated on images, an electro-optical device includes data lines, scanning lines, TFTs, and pixel electrodes on a substrate. Cutout portions are formed in parts of the pixel electrodes. First light-shielding films extend along at least one of the data lines and the scanning lines. Quadrangular portions formed of the same film as the first light-shielding films are formed in the first light-shielding films to reduce or prevent the light leakage due to the cutout portions.

Abstract: An electro-optical device includes, above a substrate, data lines extending in a first direction, scanning lines which extend in a second direction and which cross the data lines, pixel electrodes and thin film transistors disposed so as to correspond to regions in which the data lines and the scanning lines cross, storage capacitors electrically connected to the thin film transistors and the pixel electrodes, and a shield layer disposed between the data lines and the pixel electrodes. An upper electrode and a lower electrode between which a dielectric film forming each storage capacitor is supported including a first portion laminated along a plane parallel with one surface of the substrate and a second portion laminated along a plane orthogonal to the surface of the substrate, the sectional shape of the capacitor including a projecting shape.

Abstract: An electro-optical device includes, above a substrate, data lines extending in a first direction, scanning lines which extend in a second direction and which cross the data lines, pixel electrodes and thin film transistors disposed so as to correspond to regions in which the data lines and the scanning lines cross, storage capacitors electrically connected to the thin film transistors and the pixel electrodes, and a shield layer disposed between the data lines and the pixel electrodes. An upper electrode and a lower electrode between which a dielectric film forming each storage capacitor is supported including a first portion laminated along a plane parallel with one surface of the substrate and a second portion laminated along a plane orthogonal to the surface of the substrate, the sectional shape of the capacitor including a projecting shape.

Abstract: The invention provides a substrate device having thin film transistors (TFTs), each including a semiconductor layer and capacitors formed above the TFTs, that are provided on a substrate. Each of the capacitors can include a first electrode electrically connected to a part of the semiconductor layer, a second electrode arranged to face the first electrode, and a dielectric film including a nitride film arranged between the first electrode and the second electrode on the substrate. Further, the nitride film has an aperture facing the semiconductor layer as seen in plan view. Accordingly, it is possible to effectively hydrogenate the semiconductor layer using the aperture.