Abstract: A semiconductor device according to an embodiment includes first to third semiconductor regions, a structure body, a gate electrode, and a high resistance part. The structure body includes an insulating part and a conductive part. The insulating part is arranged with the third semiconductor region, the second semiconductor region, and a portion of the first semiconductor region. The conductive part is located in the insulating part. The conductive part includes a portion facing the first semiconductor region. The high resistance part is located in the first semiconductor region and has a higher electrical resistance than the first semiconductor region. A plurality of the structure bodies includes first to third structure bodies. The second and third structure bodies are next to the first structure body. The high resistance part overlaps a circle center of an imaginary circle passing through centers of the first to third structure bodies.

Abstract: There is provided a method of fabricating a semiconductor device including forming a first film on a base layer, forming a first mask pattern on the first film, the first mask pattern having mask portions arranged at a given pitch, forming first sidewall films on sidewalls of the first mask pattern by etchback of a deposited second film, removing the first mask pattern, and forming a second mask pattern composed of the first sidewall films and second sidewall films defined by etchback of a deposited third film. It is possible to form a stripe pattern with the line width and the line space thereof having the same sizes and at a pitch the same as the minimum process size determined by the photolithographic performance, thereby enabling fabrication of a semiconductor device with a high degree of integration.

Abstract: A semiconductor device that includes: a memory cell array that includes non-volatile memory cells; an area that is contained in the memory cell array and stores area data; a first storage unit that holds data transferred from the memory cell array, and outputs the data; and a control circuit that selects between a primary reading mode for causing the first storage unit to hold the area data transferred from the memory cell array and to output the area data, and a secondary reading mode for causing the first storage unit to hold a plurality of pieces of divisional data formed by dividing the area data and transferred from the memory cell array and to output the divisional data.

Abstract: A semiconductor device that includes: a memory cell array that includes non-volatile memory cells; an area that is contained in the memory cell array and stores area data; a first storage unit that holds data transferred from the memory cell array, and outputs the data; and a control circuit that selects between a primary reading mode for causing the first storage unit to hold the area data transferred from the memory cell array and to output the area data, and a secondary reading mode for causing the first storage unit to hold a plurality of pieces of divisional data formed by dividing the area data and transferred from the memory cell array and to output the divisional data.

Abstract: A hydrogen sensor includes a hydrogen-absorbing material, a thermoelectric element, an electrical circuit for driving the thermoelectric element, a thermometer for the hydrogen-absorbing material, a temperature control circuit for maintaining the hydrogen-absorbing material at a constant temperature using the thermoelectric element, a unit for calculating the exothermic value of the hydrogen-absorbing material based on the electrical current flowing from the drive circuit, and a unit for calculating the hydrogen uptake of the hydrogen-absorbing material based on the exothermic value.

Abstract: There is provided a method of fabricating a semiconductor device including forming a first film on a base layer, forming a first mask pattern on the first film, the first mask pattern having mask portions arranged at a given pitch, forming first sidewall films on sidewalls of the first mask pattern by etchback of a deposited second film, removing the first mask pattern, and forming a second mask pattern composed of the first sidewall films and second sidewall films defined by etchback of a deposited third film. It is possible to form a stripe pattern with the line width and the line space thereof having the same sizes and at a pitch the same as the minimum process size determined by the photolithographic performance, thereby enabling fabrication of a semiconductor device with a high degree of integration.

Abstract: A pressure-sensitive capacitive sensor is provided that can easily remove noises delivered from a human body. The capacitive sensor includes a sensor unit having a first substrate where a plurality of vertical wiring lines is formed and a second substrate where a plurality of horizontal wiring lines is formed, the first and second substrates being disposed in a matrix and facing each other with a gap interposed therebetween, and a capacitance at intersections between the vertical wiring lines and the horizontal wiring lines changed in response to an external pressure; and a detecting unit for detecting the change in capacitance at the intersections between the vertical wiring lines and the horizontal wiring lines, and detecting an externally applied pressure distribution based on the detecting result. In this case, a horizontal wiring line 50 for noise detection is disposed on a surface where the horizontal wiring lines are formed in the second substrate.

Abstract: A hydrogen sensor includes a hydrogen-absorbing material, a thermoelectric element, an electrical circuit for driving the thermoelectric element, a thermometer for the hydrogen-absorbing material, a temperature control circuit for maintaining the hydrogen-absorbing material at a constant temperature using the thermoelectric element, a unit for calculating the exothermic value of the hydrogen-absorbing material based on the electrical current flowing from the drive circuit, and a unit for calculating the hydrogen uptake of the hydrogen-absorbing material based on the exothermic value.

Abstract: A flash memory having a nonvolatile memory cell, includes a plurality of banks each having a plurality of sectors, an erasing voltage generator circuit and a writing voltage generator circuit, wherein while an applying an erase pulse to a sector to be erased in a first bank, an erasing control is performed by, a pre-writing control is concurrently performed by applying a writing pulse to a sector to be erased in a second bank. At the time when erasing control of the sector to be erased in a first bank is finished, pre-writing control of the sector to be erased in a second bank is finished or partially finished, and thus the time required for erasing operations of the first and the second bank can be reduced.

Abstract: A flash memory having a nonvolatile memory cell, includes a plurality of banks each having a plurality of sectors, an erasing voltage generator circuit and a writing voltage generator circuit, wherein while an applying an erase pulse to a sector to be erased in a first bank, an erasing control is performed by, a pre-writing control is concurrently performed by applying a writing pulse to a sector to be erased in a second bank.

Abstract: In the image display device of the present invention, a number of light scattering layers formed on the ends of optical fibers are spotwise distributed on the image display surface, and said scattering layers are comprised of a transparent resin having a granular light scattering material added or very small depressions and projections produced on the surface. Further, the method of manufacturing the image display device according to the present invention is characterized by arranging the end faces of a number of optical fibers to the image display surface, then applying a photosensitive resin onto the image display surface, hardening the resin around the end of the respective optical fibers on the image display surface by the beam of light from the incident surface to form light scattering layers, then removing the unhardened portions.

Abstract: A heat-resistant alloy having excellent properties at high temperatures and useful for producing exhaust valves, comprises, in weight %, not more than 0.10% C, not more than 2.0% Si, not more than 2.0% Mn, from 35 to 50% Ni, from 17 to 25% Cr, from 3.2 to 5% Mo, from 2.0 to 3.2% Ti, from 0.5 to 1.5% Al, with the balance consisting essentially of Fe, wherein the weight ratio of Ti/Al is not more than 5/1. The alloy may further comprise at least one of B, Ca, and Mg, and/or at least one of Nb and Ta.