Abstract: A technique for improving the performance of a secondary battery is provided. A secondary battery according to an embodiment includes a first electrode, a second electrode, a first layer disposed on the first electrode, and including a first n-type oxide semiconductor, a second layer disposed on the first layer and including a second n-type oxide semiconductor material and a first insulating material, a third layer disposed on the second layer and including tantalum oxide, and a fourth layer disposed on the third layer and including a second insulating material.

Abstract: An object of the present invention is to provide a power storage device structure in which the number of layers to be laminated is reduced as compared with a conventional power storage device. A power storage device according to the present invention includes a conductive electrode, an insulator and an n-type metal oxide semiconductor, and a charging layer for storing charges and an iridium oxide layer formed of iridium oxide as a material to be used for a dielectric layer of a solid-state electrochromic element are sequentially laminated. Since iridium oxide has a low resistivity, the iridium oxide layer is given the function of the conductive electrode to eliminate the conductive electrode and reduce the number of layers to be laminated.

Abstract: A secondary battery according to the present invention includes a first electrode, a second electrode, a charging layer arranged between the first electrode (11) and the second electrode and containing a mixture of an insulating material and a first n-type oxide semiconductor material, an n-type oxide semiconductor layer arranged between the charging layer and the first electrode and containing a second n-type oxide semiconductor material, a p-type oxide semiconductor layer (16) arranged between the charging layer and the second electrode and containing a p-type oxide semiconductor material, a mixture layer arranged between the charging layer and the p-type oxide semiconductor layer and containing a mixture of silicon oxide and a third n-type oxide semiconductor material, and a conductive layer arranged between the first electrode and the n-type oxide semiconductor layer and containing a metal material.

Abstract: A method for manufacturing oxide semiconductor secondary cells concurrently and evenly on a plurality of chips. A method for manufacturing a chip on which an oxide semiconductor secondary cell is mounted, the oxide semiconductor secondary cell that is formed by layering a first electrode, a charging function layer, and a second electrode being layered on a circuit. The method includes a layering process to layer and form the oxide semiconductor secondary cells integrally at regions corresponding to a plurality of chips formed on a wafer without separately forming oxide semiconductor secondary cells at regions corresponding to the respective chips, and a separating process to perform separation into individual oxide semiconductor secondary cells corresponding to the respective chips by performing pattern etching on the integrally-formed oxide semiconductor secondary cells to eliminate regions not corresponding to the respective chips except for regions corresponding to the respective chips.

Abstract: A secondary battery according to the present invention includes a first electrode, a second electrode, a charging layer arranged between the first electrode (11) and the second electrode and containing a mixture of an insulating material and a first n-type oxide semiconductor material, an n-type oxide semiconductor layer arranged between the charging layer and the first electrode and containing a second n-type oxide semiconductor material, a p-type oxide semiconductor layer (16) arranged between the charging layer and the second electrode and containing a p-type oxide semiconductor material, a mixture layer arranged between the charging layer and the p-type oxide semiconductor layer and containing a mixture of silicon oxide and a third n-type oxide semiconductor material, and a conductive layer arranged between the first electrode and the n-type oxide semiconductor layer and containing a metal material.

Abstract: The electricity storage device includes: a first oxide semiconductor layer having a first conductivity-type first oxide semiconductor; a first charge layer disposed on the first oxide semiconductor layer, and composed by including a first insulating material and a first conductivity-type second oxide semiconductor; and a third oxide semiconductor layer disposed on the first charge layer. The third oxide semiconductor layer has hydrogen and a second conductivity-type third oxide semiconductor, and a percentage of the hydrogen with respect to a metal constituting the third oxide semiconductor is equal to or greater than 40%. The embodiments provide an electricity storage device capable of increasing an electricity storage capacity per unit volume (weight).

Abstract: Provided is a secondary battery which is small in size and in which current capacity per unit volume can be increased. The present invention provides a secondary battery including two cell units each including a charging layer between a first electrode layer and a second electrode layer, the two cell units being parallel-connected by juxtaposing and connecting a first electrode layer of one cell unit and a first electrode layer of the other cell unit or a second electrode layer of the one cell unit and a second electrode layer of the other cell unit, and by wire-connecting the second electrode layer of the one cell unit and the second electrode layer of the other cell unit or the first electrode layer of the one cell unit and the first electrode layer of the other cell unit.

Abstract: A method for manufacturing oxide semiconductor secondary cells concurrently and evenly on a plurality of chips. A method for manufacturing a chip on which an oxide semiconductor secondary cell is mounted, the oxide semiconductor secondary cell that is formed by layering a first electrode, a charging function layer, and a second electrode being layered on a circuit. The method includes a layering process to layer and form the oxide semiconductor secondary cells integrally at regions corresponding to a plurality of chips formed on a wafer without separately forming oxide semiconductor secondary cells at regions corresponding to the respective chips, and a separating process to perform separation into individual oxide semiconductor secondary cells corresponding to the respective chips by performing pattern etching on the integrally-formed oxide semiconductor secondary cells to eliminate regions not corresponding to the respective chips except for regions corresponding to the respective chips.

Abstract: Provided is a secondary battery in which a single-layer secondary cell has an all-solid-state secondary cell structure with a storage layer sandwiched between a positive electrode layer and a negative electrode layer and which is superior to a conventional secondary battery with respect to at least one of volume, operation, and positioning. The present invention provides a secondary battery including a folded single-layer secondary cell formed by folding a sheet-shaped single-layer secondary cell, with a storage layer sandwiched between a positive electrode layer and a negative electrode layer, two or more times while alternately reversing the folding direction.

Abstract: There is provided an electrode structure for preventing cracks occurring in a metal electrode due to heating in a manufacturing process in the case of stacking an insulating resin and the metal electrode which are different in thermal expansion coefficient. An electrode for a semiconductor circuit, stacked on a substrate made of an insulating resin, has an electrode structure composed of a main electrode including a slit formed by cutting out a part thereof to prevent occurrence of a crack in a manufacturing process caused by a difference in thermal expansion coefficient from the substrate, and an auxiliary electrode that covers the slit in the main electrode. No slit is provided but a bridge is formed at a portion where the slit in the main electrode and the slit in the auxiliary electrode overlap with each other, thereby eliminating a gap portion where the electrode does not exist.

Abstract: The purpose of this invention is to provide a repeatedly chargeable and dischargeable quantum battery that is available for a long period of time without an aging change. The quantum battery is charged by causing an n-type metal oxide semiconductor to have a photo-exited structural change, thereby the electrode of quantum battery is prevented from being oxide and a price reduction and stable operation are possible. The repeatedly usable quantum battery is constituted by laminating; a first metal electrode having an oxidation preventing function, charging layer in which an energy level is formed in the band gap by causing an n-type metal oxide semiconductor covered with an insulating material to have a photo-exited structure change and electrons are trapped at the energy level; p-type metal oxide semiconductor layer; and a second metal electrode having the oxidation preventing function, the electrodes are passive metal layers formed of metals having passive characteristics.

Abstract: Provided is a secondary battery adopting an all-solid-state secondary cell structure with a storage layer sandwiched between a positive electrode layer and a negative electrode layer and which is superior to a conventional secondary battery with respect to at least one of volume, manufacturing, and positioning. The present invention provides a secondary battery including a single-layer secondary cell having a folded structure that a sheet-shaped single-layer secondary cell with a storage layer sandwiched between a positive electrode layer and a negative electrode layer is folded in two or four.

Abstract: Provided is a secondary battery which is small in size and in which current capacity per unit volume can be increased. The present invention provides a secondary battery including two cell units each including a charging layer between a first electrode layer and a second electrode layer, the two cell units being parallel-connected by juxtaposing and connecting a first electrode layer of one cell unit and a first electrode layer of the other cell unit or a second electrode layer of the one cell unit and a second electrode layer of the other cell unit, and by wire-connecting the second electrode layer of the one cell unit and the second electrode layer of the other cell unit or the first electrode layer of the one cell unit and the first electrode layer of the other cell unit.

Abstract: There is provided an electrode structure for preventing cracks occurring in a metal electrode due to heating in a manufacturing process in the case of stacking an insulating resin and the metal electrode which are different in thermal expansion coefficient. An electrode for a semiconductor circuit, stacked on a substrate made of an insulating resin, has an electrode structure composed of a main electrode including a slit formed by cutting out a part thereof to prevent occurrence of a crack in a manufacturing process caused by a difference in thermal expansion coefficient from the substrate, and an auxiliary electrode that covers the slit in the main electrode. No slit is provided but a bridge is formed at a portion where the slit in the main electrode and the slit in the auxiliary electrode overlap with each other, thereby eliminating a gap portion where the electrode does not exist.

Abstract: Provided is a secondary battery adopting an all-solid-state secondary cell structure with a storage layer sandwiched between a positive electrode layer and a negative electrode layer and which is superior to a conventional secondary battery with respect to at least one of volume, manufacturing, and positioning. The present invention provides a secondary battery including a single-layer secondary cell having a folded structure that a sheet-shaped single-layer secondary cell with a storage layer sandwiched between a positive electrode layer and a negative electrode layer is folded in two or four.

Abstract: Provided is a secondary battery in which a single-layer secondary cell has an all-solid-state secondary cell structure with a storage layer sandwiched between a positive electrode layer and a negative electrode layer and which is superior to a conventional secondary battery with respect to at least one of volume, operation, and positioning. The present invention provides a secondary battery including a folded single-layer secondary cell formed by folding a sheet-shaped single-layer secondary cell, with a storage layer sandwiched between a positive electrode layer and a negative electrode layer, two or more times while alternately reversing the folding direction.

Abstract: The purpose of this invention is to provide a repeatedly chargeable and dischargeable quantum battery that is available for a long period of time without an aging change. The quantum battery is charged by causing an n-type metal oxide semiconductor to have a photo-exited structural change, thereby the electrode of quantum battery is prevented from being oxide and a price reduction and stable operation are possible. The repeatedly usable quantum battery is constituted by laminating; a first metal electrode having an oxidation preventing function, charging layer in which an energy level is formed in the band gap by causing an n-type metal oxide semiconductor covered with an insulating material to have a photo-exited structure change and electrons are trapped at the energy level; p-type metal oxide semiconductor layer; and a second metal electrode having the oxidation preventing function, the electrodes are passive metal layers formed of metals having passive characteristics.