Patents by Inventor Takuo Oohashi

Takuo Oohashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing semiconductor devices
    Patent number: 6602751
    Abstract: A disclosed method for manufacturing semiconductor devices includes the steps of: implanting an ion in a region in which a medium thickness gate oxide film is to be formed, under such conditions that a range of fluorine may measure 15-150 nm in a P-type silicon substrate; removing a chemical oxide film on the surface or the region; and forming by oxidation processing the gate oxide film with the medium film thickness in the region.
    Type: Grant
    Filed: April 17, 2001
    Date of Patent: August 5, 2003
    Assignee: NEC Corporation
    Inventor: Takuo Oohashi
  • Method for manufacturing semiconductor devices
    Publication number: 20010039093
    Abstract: A disclosed method for manufacturing semiconductor devices includes the steps of: implanting an ion in a region in which a medium thickness gate oxide film is to be formed, under such conditions that a range of fluorine may measure 15-150 nm in a P-type silicon substrate; removing a chemical oxide film on the surface or the region; and forming by oxidation processing the gate oxide film with the medium film thickness in the region.
    Type: Application
    Filed: April 17, 2001
    Publication date: November 8, 2001
    Applicant: NEC Corporation
    Inventor: Takuo Oohashi