Abstract: An inspection system (a secondary battery anomaly detection system) has a ROM which stores data including information about a V-dQ/dV curve upon initial charge of a reference secondary battery. At inspection of a secondary battery, upon initial charge from a power supply, an anomaly detecting unit uses an amount of stored electricity calculated from a current value detected by a current detecting unit to calculate a dQ/dV actual measurement value, which is a ratio of a changed amount of the amount of stored electricity to a changed amount of a voltage value detected by a voltage detecting unit, compares the calculated value and the information about the V-dQ/dV curve to determine whether the calculated value corresponds to a feature point on the curve, and detects an anomaly of the secondary battery (incapability of long-term capacity reliability) when the calculated value does not correspond to the feature point on the curve.

Abstract: An automatic analyzer is capable of reducing the influence of scattered light having noise components to enhance the S/N ratio properties of a light reception signal. Data is obtained at a plurality of angles by a plurality of detectors and a signal obtained by one detector selected from among the detectors is selected as a reference signal. An approximation is applied by an approximation selection unit, and an approximation calculation unit calculates an approximation using the selected approximation. A degree of variability of the reference signal is determined and a data correction unit corrects the signal of the detector by dividing the signal of the detector by the degree of variability of the reference signal. A concentration calculation processing unit performs the concentration calculation by use of the corrected signal data, and a result output unit outputs the results on a display.

Abstract: Disclosed is an automatic analysis device including light detectors that detect scattered light, whereby highly reliable analysis results can be obtained by reduction of the effect of noise components. Highly reliable concentration analysis with little effect from noise components can be achieved by calculating the correlation between scattered light detected by a plurality of light detectors before calculating concentration, and by performing concentration analysis using scattered light with high correlation.

Abstract: An image display device in which each pixel has a thin-film electron source composed of a lower electrode (which is a signal wire), an electron accelerating layer (which is formed by anodizing the surface of said signal wire), and an upper electrode (which covers said electron accelerating layer and releases electrons), in which the anodized film constituting said electron accelerating layer contains hydrated alumina component and anhydrous alumina component such that their ratio in the side close to the upper electrode is greater than that in the side close to the lower electrode. This structure prevents said thin-film electron source from being deteriorated in diode characteristics by said electron accelerating layer, thereby enhancing the reliability of said image display device.

Abstract: An image display device in which each pixel has a thin-film electron source composed of a lower electrode (which is a signal wire), an electron accelerating layer (which is formed by anodizing the surface of said signal wire), and an upper electrode (which covers said electron accelerating layer and releases electrons), in which the anodized film constituting said electron accelerating layer contains hydrated alumina component and anhydrous alumina component such that their ratio in the side close to the upper electrode is greater than that in the side close to the lower electrode. This structure prevents said thin-film electron source from being deteriorated in diode characteristics by said electron accelerating layer, thereby enhancing the reliability of said image display device.

Abstract: A system for analyzing defects in electronic circuit patterns, including: comparing position information of structural defects with position information of electrical faults and extracting corroborated defects having common position information between the structural defects and electrical faults; classifying images of extracted corroborated defects into critical defect images and non-critical defect images based on a pre-stored classification rule which defines critical and non-critical defects by referring to images of defects, position information of defects, and results of performing an electronic test; modifying the pre-stored classification rule by correcting classification of classified defect images displayed on the screen; and repeating the operations for each subsequent object, wherein for each present object under inspection, using a modified pre-stored classification rule with respect to a previous object, as the pre-stored classification rule for the operations with respect to the present object.

Abstract: Disclosed herein is an image display device including: plural pixels arranged two-dimensionally; and a thin film electron emitter that has a lower electrode formed of one of data lines, an electron acceleration layer formed by an anodic oxidation of a surface of the lower electrode, and an upper electrode stacked on the electron acceleration layer to emit electrons thereby provided in each of the plural pixels, in which a ratio of hydrate-alumina to the total of the hydrate-alumina and anhydrous-alumina contained in the electron acceleration layer (the anodic oxide film) arranged in each of the pixels in regulated in a range from 0.25 to 0.42.

Abstract: When any of pixels is not lit in an organic EL display having an organic EL layer between a first electrode and a second electrode, an organic layer of the pixel is observed. If the organic layer of the pixel contains foreign matter, the second electrode is separated into a region in contact with the foreign matter and a region not in contact with both the contact region and the foreign matter. Thus, not-lit display regions are reduced as less as possible, making it possible to manufacture an organic EL display excellent in display performance.

Abstract: The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film, and the grain size distribution of the polysilicon film is measured. An optimum value of energy density of laser beam irradiation is calculated on the basis of grain size values measured at two points A and B of the polysilicon film. Then, the average film thickness of an amorphous silicon film formed on a subsequent substrate is measured. A value of energy density of laser beam irradiation for the subsequent amorphous silicon film is calculated on the basis of the two average film thicknesses. Accordingly, a uniform polysilicon film of large grain sizes is formed on the whole surface of a large-size substrate to provide polysilicon TFTs in a large area.

Abstract: An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.

Abstract: An image display device according to the present invention comprises a back panel on which a plurality of pixels each having a thin film electron emitter are arranged two-dimensionally, a front panel disposed opposite the back panel on which phosphor layer is formed, and a sealing frame with which the back panel and the front panel are fixed mutually to seal the plurality of pixels and the phosphor layer in a space enclosed by the back panel, the front panel, and the sealing frame, and is characterized in that double-layered signal lines each electrically connected to a group of the plurality of pixels are formed on the back panel, each of the double-layered signal lines consists of a lower-level electrode made from a silver paste and an upper-level electrode covering at least a part of the lower-level electrode laminated in this order on the back panel. The lower-level electrode is shaped e.g.

Abstract: For inhibiting generation of pixels that could not be displayed in a line in a display screen of an electron emission display comprising the pixels each provided with an electron source in which a first electrode at a signal line side and a second electrode at a scanning line side are joined through an isolating layer (electron acceleration layer), the present invention cuts off continuity between the first electrode and the second electrode which are short-circuited caused by a defect, so that the electron source with the defect is isolated from other electron sources. In the electron source with a defect, for example, a portion of the second electrode surrounding the above-mentioned defect thereof is excised by laser.

Abstract: In an image display device having, in each pixel, an electron emitter containing a first electrode, an insulating layer, and a second electrode arranged in this order, the insulating layer is formed by anodic oxidation using the first electrode and has defects, if any, in a number of 3×1019 or less cubic centimeter. The electron emitter has a longer life, and the image display device using the electron emitter has improved reliability and image quality.

Abstract: A system for analyzing defects in electronic circuit patterns, including: comparing position information of structural defects with position information of electrical faults and extracting corroborated defects having common position information between the structural defects and electrical faults; classifying images of extracted corroborated defects into critical defect images and non-critical defect images based on a pre-stored classification rule which defines critical and non-critical defects by referring to images of defects, position information of defects, and results of performing an electronic test; modifying the pre-stored classification rule by correcting classification of classified defect images displayed on the screen; and repeating the operations for each subsequent object, wherein for each present object under inspection, using a modified pre-stored classification rule with respect to a previous object, as the pre-stored classification rule for the operations with respect to the present object.

Abstract: In order to allow critical flaws in an inspected item to be determined early during a production process, the present invention includes the following steps: a step of detecting defects in a production process for the inspected item and storing defect positions; a step of collecting detailed defect information and storing the detailed information in association with defect positions; a step of storing positions at which flaws were generated based on a final inspection of the inspected item; a step of comparing defect positions with positions at which flaws were generated; and a step of classifying and displaying detailed information based on the comparison results.

Abstract: When any of pixels is not lit in an organic EL display having an organic EL layer between a first electrode and a second electrode, an organic layer of the pixel is observed. If the organic layer of the pixel contains foreign matter, the second electrode is separated into a region in contact with the foreign matter and a region not in contact with both the contact region and the foreign matter. Thus, not-lit display regions are reduced as less as possible, making it possible to manufacture an organic EL display excellent in display performance.

Abstract: An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.

Abstract: The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film. The grain size distribution of the polysilicon film is measured. An optimum value of energy density of laser beam irradiation is calculated on the basis of grain size values measured at two points A and B of the polysilicon film. Then, the average film thickness of a next amorphous silicon film is measured. A value of energy density of laser beam irradiation is calculated on the basis of the average film thickness of the next amorphous silicon film and the average film thickness of the previous amorphous silicon film. The value of energy density is fed back to a laser beam irradiation system.

Abstract: An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.

Abstract: Inexpensive, unannealed glass is used as a substrate. The surface of a polycrystalline silicon film doped with boron (B) or phosphorus (P) is oxidized with ozone at a processing temperature of 500° C. or below to form a silicon oxide film of 4 to 20 nm thick on the surface of polycrystalline silicon. On account of this treatment, the level density at the interface between the gate-insulating layer and the channel layer can be made lower, and a thin-film transistor having less variations of characteristics can be formed on the unannealed glass substrate.