Patents by Inventor Takuro Iwamura

Takuro Iwamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5705125
    Abstract: A wire for electric railways comprises a copper alloy which consists essentially, by weight percent, of 0.1 to 1.0% Cr, 0.01 to 0.3% Zr, 0.05 to 0.15% Sn, and 10 ppm or less O, and if required, further contains 0.01 to 0.1% Si, or 0.01 to 0.1% Si and 0.001 to 0.05% Mg, with the balance being Cu and inevitable impurities.
    Type: Grant
    Filed: November 22, 1994
    Date of Patent: January 6, 1998
    Assignees: Mitsubishi Materials Corporation, Railway Technical Research Institute
    Inventors: Motoo Goto, Shizuo Kawakita, Yoshiharu Mae, Takuro Iwamura, Yutaka Koshiba, Kenji Yajima, Syunji Ishibashi, Hiroki Nagasawa, Atsushi Sugahara, Sumihisa Aoki, Haruhiko Asao
  • Patent number: 5391243
    Abstract: A wire for electric railways comprises a copper alloy which consists essentially, by weight percent, of 0.1 to 1.0% Cr, 0.01 to 0.3% Zr, and 10 ppm or less O, and if required, further contains at least one element selected from the group consisting of 0.01 to 0.1% Si and 0.001 to 0.05% Mg, with the balance being Cu and inevitable impurities. The wire is manufactured by hot working a copper alloy billet having the above composition, immediately quenching the hot worked billet to prepare an element wire, cold working the element wire at least once, and subjecting the cold worked element wire to aging treatment.
    Type: Grant
    Filed: October 28, 1993
    Date of Patent: February 21, 1995
    Assignees: Mitsubishi Materials Corporation, Railway Technical Research Institute
    Inventors: Motoo Goto, Shizuo Kawakita, Yoshiharu Mae, Takuro Iwamura, Yutaka Koshiba, Kenji Yajima, Syunji Ishibashi, Hiroki Nagasawa, Atsushi Sugahara, Sumihisa Aoki, Haruhiko Asao
  • Patent number: 5143355
    Abstract: Method and apparatus for manufacturing an oxygen-free copper having an oxygen content of no greater than 3 ppm by weight are disclosed. In the method, a deoxidizing step is carried out by bringing a reducing gas containing hydrogen gas into contact with a molten copper to react on the oxygen to remove the same. Then a dehydrogenation step may be carried out by bringing a gas of lean hydrogen concentration into contact with the molten copper. Accordingly, the apparatus has a deoxidizing device for blowing the reducing gas into the molten copper and preferably a dehydrogenation device.
    Type: Grant
    Filed: June 5, 1991
    Date of Patent: September 1, 1992
    Assignee: Mitsubishi Materials Corporation
    Inventors: Takuro Iwamura, Tsugio Koya, Izumi Sukekawa, Hideru Hagiwara, Haruhiko Asao, Toshiaki Shigematsu, Hideki Sato
  • Patent number: 5037471
    Abstract: Method and apparatus for manufacturing an oxygen-free copper having an oxygen content of no greater than 3 ppm by weight are disclosed. In the method, a deoxidizing step is carried out by bringing a reducing gas containing hydrogen gas into contact with a molten copper to react to the oxygen to remove the same. Then a dehydrogenation step may be carried out by bringing a gas of lean hydrogen concentration into contact with the molten copper. Accordingly, the apparatus has a deoxidizing device for blowing the reducing gas into the molten copper and preferably a dehydrogenation device.
    Type: Grant
    Filed: November 21, 1989
    Date of Patent: August 6, 1991
    Assignee: Mitsubishi Metal Corporation
    Inventors: Takuro Iwamura, Tsugio Koya, Izumi Sukekawa, Hideru Hagiwara, Haruhiko Asao, Toshiaki Shigematsu, Hideki Sato
  • Patent number: 4901550
    Abstract: In a method of manufacturing an extra fine wire, a blank wire cooled to a low temperature is caused to pass through a high humidity atmosphere and, immediately thereafter, is drawn to a diameter such that wire breakage due to the drawing does not occur. Alternatively, a blank wire is caused to pass through a die assembly so arranged as to be immersed in refrigerant, and is drawn within the refrigerant of low temperature, to a diameter with which wire breakage due to the drawing does not occur. The drawn wire material is heated rapidly and is annealed and, thereafter, is cooled rapidly to form an intermediate blank wire. Subsequently, the intermediate wire is drawn at the ordinary temperature.
    Type: Grant
    Filed: December 28, 1988
    Date of Patent: February 20, 1990
    Assignee: Mitsubishi Kinzoku Kabushiki Kaisha
    Inventors: Masato Koide, Takuro Iwamura, Tsugio Koya
  • Patent number: 4886641
    Abstract: A novel electrical contact spring material made of a copper base alloy is disclosed. This spring material has high strength and toughness, as well as good adhesion of solder. It also has reduced anisotropy in its characteristics in two directions, i.e., the working direction and the direction perpendicular to it. A very thin-walled member can be produced from this spring material since its anisotropy in characteristics is small and will not increase even if the amount of working is increased.The copper base alloy of which this spring material is made consists essentially of 2.2-5% Ti, 0.1-0.8% Co, 0.02-0.5% Cr, 0-0.6% of Ni and/or Fe, 0-0.5% of at least one of Ca, Mg, Zn, Cd, Li, Zr, Si, Mn, Sn and Al, and the balance being Cu and incidental impurities.
    Type: Grant
    Filed: April 20, 1988
    Date of Patent: December 12, 1989
    Assignee: Mitsubishi Kinzoku Kabushiki Kaisha
    Inventors: Takuro Iwamura, Masao Kobayashi
  • Patent number: 4872048
    Abstract: A semiconductor device having leads of high strength and elongation and which consist essentially of a copper alloy that contains 0.05-1% of Cr, 0.005-0.3% of Zr, 0.001-0.05% of Li, 0-1% of Ni, 0-1% of Sn, 0-1% of Ti, 0-0.1% of Si and 0.001-0.3% of at least one element selected from the group consisting of P, Mg, Al, Zn and Mn, with the balance being Cu and no more than 0.1% of incidental impurities, the percent being on a weight basis. The invention also provides a semiconductor device having leads of high strength and elongation and which consist essentially of a copper alloy that contains either 0.05-1% of Cr or 0.005-0.3% of Zr or both, 0.001-0.05% of Li, 0-1% of Ni, 0-1% of Sn, 0-1% of Ti, 0-0.
    Type: Grant
    Filed: March 10, 1988
    Date of Patent: October 3, 1989
    Assignee: Mitsubishi Kinzoku Kabushiki Kaisha
    Inventors: Hidetoshi Akutsu, Takuro Iwamura, Masao Kobayashi
  • Patent number: 4830086
    Abstract: A mold member and a rapidly solidifying water cooled rotary roll member contain 1.3 to 5% of Ni, 0.2 to 2% of Ti, 0.1 to 1.5% of Cr, 0 to 0.5% of Zr, 0 to 1% of Al, 0 to 0.5% of at least one of Fe and Co, 0 to 1.2% of Sn, 0 to 1.2% of Mn, 0 to 1.2% of Zn, 0 to 0.2% of Mg, 0 to 0.2% of P, and 0 to 0.2% of a rare earth element, wherein the remainder of the material has a composition consisting of Cu and unavoidable impurities. Each of the members has superior thermal fatigue resistance and erosion resistance against molten metal, high-temperature strength, high-temperature hardness, high-temperature ductility and heat resistance.
    Type: Grant
    Filed: August 30, 1988
    Date of Patent: May 16, 1989
    Assignee: Mitsubishi Kinzoku Kabushiki Kaisha
    Inventors: Masao Kobayashi, Takuro Iwamura, Kazuhiko Tabei
  • Patent number: 4749548
    Abstract: Copper alloy lead materials used in the fabrication of semiconductor devices such as ICs and LSIs are required to have a tensile strength of 40 kgf/mm.sup.2 or more, an elongation of 4% or more, an electrical conductivity of 50% IACS or more, and a softening point of 400.degree. C. or higher.The copper alloy lead material of the present invention exhibits even higher degrees of tensile strength and elongation and yet satisfy the values of electrical conductivity and softening point that are required for Cu alloy lead materials to be used with ordinary semiconductor devices. Therefore, the Cu alloy lead material of the present invention is applicable not only to ordinary semiconductor devices but also to those with higher packing densities while displaying equally superior performance.
    Type: Grant
    Filed: September 3, 1986
    Date of Patent: June 7, 1988
    Assignee: Mitsubishi Kinzoku Kabushiki Kaisha
    Inventors: Hidetoshi Akutsu, Takuro Iwamura, Masao Kobayashi