Abstract: A reflective mask blank including a substrate, a multilayer reflection film formed on one main surface of the substrate and reflects exposure light. The multilayer reflection film has a periodically laminated structure portion in which low refractive index layers and high refractive index layers are alternately laminated, and at least one of the low refractive index layer has a two-layered structure consisting of one layer containing molybdenum, and at least one additive element selected from the group consisting of nitrogen, carbon, boron, silicon and hydrogen, and the other layer containing molybdenum and substantively free of other elements other than molybdenum.

Abstract: A reflective mask blank including a substrate, a multilayer reflection film that is formed on one main surface of the substrate and reflects exposure light is provided. The multilayer reflection film has a periodically laminated structure in which repeating units are multiply stacked, the repeating unit includes one each of a high refractive index layer, a low refractive index layer, and a medium refractive index layer having a refractive index lower than a refractive index of the high refractive index layer and higher than a refractive index of the low refractive index layer, and in the repeating unit, the high refractive index layer and the medium refractive index layer are disposed at the substrate side and the side remote from the substrate, respectively, with respect to the low refractive index layer.

Abstract: To implement a single-exposure HDR function with a simple circuit configuration without increasing noise. An imaging device includes: a first comparison circuit that outputs a first signal according to a result of comparison between signal levels of a first input signal and a first reference signal corresponding to a first gain; a second comparison circuit that outputs a second signal according to a result of comparison between a second input signal and a second reference signal corresponding to a second gain having an amount of gain different from that of the first gain; and a third comparison circuit that outputs a third signal according to a result of comparison between signal levels of the first signal and the first input signal, and a fourth signal according to a result of comparison between the second signal and the second input signal, at timings different from each other.

Abstract: A reflective photomask blank has a substrate 10; and a multilayer reflective film 50. The multilayer reflective film 50 has a periodic stacked structure in which a low refractive index layer 30 containing ruthenium (Ru), a high refractive index layer 20 containing silicon (Si), and a diffusion prevention layer 40. The diffusion prevention layer 40 is formed in contact with the low refractive index layer 30 on both or one of a side of the low refractive index layer 30 close to the substrate 10 and a side of the low refractive index layer 30 away from the substrate 10. The diffusion prevention layer 40 is one or more sublayers selected from a layer containing a silicon nitride (SiN), a layer containing silicon carbide (Sic), a layer containing molybdenum (Mo), a layer containing a molybdenum nitride (MoN), and a layer containing molybdenum carbide (MoC).

Abstract: A reflective photomask blank has: a substrate 10; a reflective multilayer film 20 that is formed on one main surface of the substrate 10 and reflects the exposure light; a protective film 50 formed in contact with the reflective multilayer film 20; and an absorbing film 70 that is formed on the protective film 50 and absorbs the exposure light. The protective film 50 is formed using a film containing ruthenium (Ru). The absorbing film 70 is formed using a single-layer film containing tantalum (Ta) and nitrogen (N), and has a content of nitrogen of 30 atom % or more and less than 60 atom %. Contrast between light reflected from a surface of the protective film 50 and light reflected on a surface of the absorbing film 70 with respect to light having a wavelength of 193 nm to 248 nm is 20% or more.

Abstract: With respect to a reflective mask blank for a reflective mask used in EUV lithography using EUV light, the reflective mask blank including a substrate, a multilayer reflection film having a periodically laminated structure in which low-refractive index layers composed of a material containing molybdenum and high-refractive index layers are alternately laminated, a protection film, and an absorber film is provided. The low-refractive index layer consists of one or more of first low-refractive index sublayers, and one or more of second low-refractive index sublayers that have a different composition from a composition of the first low-refractive index sublayer.

Abstract: A fine and preferable pattern of an absorption film can be formed from the absorption film that can be patterned by dry etching using a gas containing oxygen (O) by a reflective mask blank including a substrate, a multilayer reflection film that is formed on one main surface of the substrate, and reflects exposure light, an absorption film that is formed on the multilayer reflection film, and absorbs the exposure light, and an etching mask film containing niobium (Nb) on the absorption film.

Abstract: As a reflective mask blank that includes a protection film containing ruthenium (Ru), a reflective mask blank in which the protection film is hard to be damaged and can be suppressed decrease of the thickness is provided by a reflective mask blank including a substrate, a multilayer reflection film, a protection film, an absorption film, and an etching prevention film that contains niobium (Nb) and is free of ruthenium (Ru) between the protection film and the absorption film.

Abstract: Provided are an imaging device capable of suppressing an error in inversion timing of a comparison result when an analog pixel signal is compared with a predetermined reference signal, and an electronic apparatus including the imaging device. An imaging device of the present disclosure includes: a load current source; a comparator that has an input transistor connected between the load current source and a signal line transmitting a signal read from a pixel; a first capacitor that inputs a predetermined reference signal to a gate electrode of the input transistor; and a second capacitor connected between the gate electrode of the input transistor and a reference potential node. Furthermore, an electronic apparatus of the present disclosure includes the imaging device having the above-described configuration.

Abstract: A phase shift mask blank including a transparent substrate, an etching protection film formed on the transparent substrate, and a phase shift film formed in contact with the etching protection film, for exposure light being ArF excimer laser. The etching protection film is composed of a material containing hafnium and oxygen or hafnium, silicon and oxygen, and has a thickness of 1 to 30 nm, and a transmittance of not less than 85% with respect the exposure light, and the phase shift film is composed of a material containing silicon and being free of hafnium, and has a thickness of 50 to 90 nm.

Abstract: A substrate with a film for a reflective mask blank including a substrate, a multilayer reflection film and a back surface conductive film having a composition at the side in contact with the substrate and a different composition at the side remotest from the substrate is provided. The composition at the side in contact with the substrate contains silicon and nitrogen, as main components, and the different composition at the side remotest from the substrate contains tantalum, as a main component, and at least one element selected from the group consisting of silicon, germanium and aluminum.

Abstract: In a reflective mask blank including a substrate, a multilayer reflection film, a protection film, an absorber film and a hard mask film, the protection film is composed of a material containing ruthenium (Ru), the absorber film consists of a first layer and a second layer, or a first layer, a second layer and a third layer, the first layer has a composition containing tantalum (Ta) and being free of nitrogen (N), the second layer has a composition containing tantalum (Ta) and nitrogen (N), the third layer has a composition containing tantalum (Ta), nitrogen (N) and oxygen (O), and the hard mask film is composed of a material containing chromium (Cr).

Abstract: An imaging device (1) according to the present disclosure includes a pixel array unit (10) that includes a pixel, an analog signal generation unit, an A/D conversion unit (23), and a switch. The analog signal generation unit generates an analog signal based on a temperature around the pixel array unit (10). The A/D conversion unit (23) converts the analog signal into a digital signal. The switch cuts off the analog signal to be supplied to the A/D conversion unit.

Abstract: A reflective mask blank that is a material for a reflective mask used in EUV lithography using EUV light as the exposure light, including a substrate, a multilayer reflection film that is formed on one main surface of the substrate and reflects the exposure light, and an absorber film that is formed on the multilayer reflection film and absorbs the exposure light, the absorber film being a single layer consisting of a first layer, or a plurality of layers consisting of, from the substrate side, a first layer and a second layer, the first layer being composed of tantalum and nitrogen and containing 55 to 70 at % of tantalum and 30 to 45 at % of nitrogen, the second layer being composed of tantalum and nitrogen, and oxygen of not more than 40 at %.

Abstract: A substrate with a film for a reflective mask blank and a reflective mask blank, including a substrate, a multilayer reflection film of Mo layers and Si layers, and a Ru protection film is provided. The substrate and blank include a mixing layer containing Mo and Si existing between the Mo layer and Si layer, another mixing layer containing Ru and Si generating between the uppermost Si layer and the Ru protection film, the film and layers have thicknesses satisfying defined expressions.

Abstract: A reflective mask blank which is a material for a reflective mask used in EUV lithography in which EUV light is exposure light, including a substrate, a reflective multilayer film that is formed on one main surface of the substrate, has a periodically laminated structure in which layers having a comparatively low refractive index with respect to exposure light and layers having a comparatively high refractive index with respect to the exposure light are alternately laminated, and reflects the exposure light, a protection film that is formed in contact with the reflective multilayer film, and an absorber film that is formed in contact with the protection film, absorbs the exposure light, and has a film stress of not more than a film stress in the case of forming the absorber film directly on the substrate.

Abstract: A reflective mask blank comprising a substrate, a multilayer reflection film that is formed on one main surface of the substrate and reflects exposure light, and a protection film that is formed on the multilayer reflection film, comprises ruthenium (Ru) and niobium (Nb), and includes a portion having a low ruthenium (Ru) content in the thickness direction compared with both ruthenium (Ru) contents at the side close to the multilayer reflection film and at the side remotest from the multilayer reflection film.

Abstract: To improve the temperature measurement accuracy in a circuit that measures temperature by using an operational amplifier. An operational amplifier outputs an output voltage corresponding to a difference between terminal voltages of a pair of input terminals. A resistor has one end connected to one of the pair of input terminals. A resistor-side rectification element is connected to another end of the resistor. A terminal-side rectification element is connected to the other one of the pair of input terminals. A switch connects an additional rectification element in parallel with either the resistor-side rectification element or the terminal-side rectification element. A current output section outputs a current corresponding to the output voltage.

Abstract: A reflective mask blank has: a substrate; a multilayer reflective film that is provided on one surface of the substrate and reflects at least EUV light; and a back conductive film that is provided on the other surface of the substrate. The back conductive film has a layer which has a film thickness of 50 nm or more and less than 80 nm, contains tantalum (Ta), silicon (Si) and nitrogen (N), has a nitrogen content of 18 atom % or more and less than 35 atom %, and has a CSi/(CTa+CSi) of 3% or more and less than 50% when a silicon content in atom % is denoted by CSi and a tantalum content in atom % is denoted by CTa.

Abstract: A substrate with a multilayer reflection film for an EUV mask blank including a substrate, and a multilayer reflection film formed on the substrate is provided. The multilayer reflection film includes a Si/Mo laminated portion and a protection layer containing Ru and including a lower layer composed of Ru, and an upper layer composed of a material containing Ru and at least one selected from the group consisting of metals other than Ru, and metalloids.