Abstract: A transmission type display includes a thin film transistor for driving a pixel electrode, which transistor is provided on a substrate, and a conductive shield layer provided at a position over the thin film transistor and under the pixel electrode. A first planarization film is formed to bury an irregular contour of the thin film transistor and the shield layer is disposed on the planarized surface of the first planarization film, and a second planarization film is formed to bury steps of the shield layer, and the pixel electrode is disposed on the planarized surface of the second planarization film. Since the transmission type display has the structure in which the conductive shield layer is put between the upper second planarization film and the lower first planarization film each of which is made from an insulating material, the shielding performance and the alignment characteristic of the display can be improved.

Abstract: A liquid crystal display device having a thin-film transistor for driving a pixel electrode and a storage capacity element on a substrate comprises the storage capacity element being formed to underlie a thin-film semiconductor layer forming said thin-film transistor. And its manufacturing method characterizes in making the storage capacity element on the substrate and making the thin-film transistor to overlie the storage capacity element via an inter-layer insulating film.

Abstract: A thin film semiconductor device includes pluralities of signal and gate interconnections crossing each other on an insulating substrate. Pixels are disposed at crossing points between the signal and gate interconnections. Each pixel has at least a pixel electrode, a thin film transistor for driving the pixel electrode, and a light shield band for shielding the thin film transistor from external light. A source of the thin film transistor is connected to the signal interconnection, a drain thereof is connected to the pixel electrode, and a gate electrode thereof is connected to the gate interconnection. The light shield band is formed of a first conductive layer, and at least part of the light shield band is used as the gate interconnection. The gate electrode is formed of a second conductive layer different from the first conductive layer.

Abstract: A liquid crystal display device having a thin-film transistor formed on a substrate for driving an pixel electrode comprises a holding capacitor line underlying a thin-film semiconductor layer which forms the thin-film transistor, and a first holding capacitor dielectric film formed between the holding capacitor line and the thin-film semiconductor layer, a first holding capacitor element being made up of the thin-film semiconductor layer and the holding capacitor line interposing the first holding capacitor dielectric film therebetween.

Abstract: A liquid crystal panel and a liquid crystal projection display apparatus comprising the liquid crystal panel, the liquid crystal panel comprising an insulating substrate, plural pixel electrode formed above said insulating substrate, plural thin film transistors each driving each of said pixel electrode, and a light-shielding layer formed between said thin film transistor and said insulating substrate.

Abstract: A transmission type display includes a thin film transistor for driving a pixel electrode, which transistor is provided on a substrate, and a conductive shield layer provided at a position over the thin film transistor and under the pixel electrode. A first planarization film is formed to bury an irregular contour of the thin film transistor and the shield layer is disposed on the planarized surface of the first planarization film, and a second planarization film is formed to bury steps of the shield layer, and the pixel electrode is disposed on the planarized surface of the second planarization film. Since the transmission type display has the structure in which the conductive shield layer is put between the upper second planarization film and the lower first planarization film each of which is made from an insulating material, the shielding performance and the alignment characteristic of the display can be improved.

Abstract: A transmission type display includes a thin film transistor for driving a pixel electrode, which transistor is provided on a substrate, and a conductive shield layer provided at a position over the thin film transistor and under the pixel electrode. A first planarization film is formed to bury an irregular contour of the thin film transistor and the shield layer is disposed on the planarized surface of the first planarization film, and a second planarization film is formed to bury steps of the shield layer, and the pixel electrode is disposed on the planarized surface of the second planarization film. Since the transmission type display has the structure in which the conductive shield layer is put between the upper second planarization film and the lower first planarization film each of which is made from an insulating material, the shielding performance and the alignment characteristic of the display can be improved.

Abstract: A TFT substrate is provided near its outer periphery with a metallic wiring and pad portions, and a conductive light-shielding film is provided on the outside of these. The conductive light-shielding film is left annularly along the outer peripheral portion of the TFT substrate so that, when an upper layer light-shielding film is formed on the TFT substrate, the upper layer light-shielding film on the scribed line side would not easily be exfoliated at the time of etching or cleaning. Of the conductive light-shielding film, the position of the conductive light-shielding film disposed on the outside of the pad portions is shifted to the outer side so that the spacing between the conductive light-shielding film and the pad portions is set to be, for example, not less than 10 &mgr;m. By this, electrostatic trouble between the conductive light-shielding film and the pad portions is restrained.

Abstract: A thin film semiconductor device includes pluralities of signal and gate interconnections crossing each other on an insulating substrate. Pixels are disposed at crossing points between the signal and gate interconnections. Each pixel has at least a pixel electrode, a thin film transistor for driving the pixel electrode, and a light shield band for shielding the thin film transistor from external light. A source of the thin film transistor is connected to the signal interconnection, a drain thereof is connected to the pixel electrode, and a gate electrode thereof is connected to the gate interconnection. The light shield band is formed of a first conductive layer, and at least part of the light shield band is used as the gate interconnection. The gate electrode is formed of a second conductive layer different from the first conductive layer.

Abstract: A TFT substrate is provided near its outer periphery with a metallic wiring and pad portions, and a conductive light-shielding film is provided on the outside of these. The conductive light-shielding film is left annularly along the outer peripheral portion of the TFT substrate so that, when an upper layer light-shielding film is formed on the TFT substrate, the upper layer light-shielding film on the scribed line side would not easily be exfoliated at the time of etching or cleaning. Of the conductive light-shielding film, the position of the conductive light-shielding film disposed on the outside of the pad portions is shifted to the outer side so that the spacing between the conductive light-shielding film and the pad portions is set to be, for example, not less than 10 &mgr;m. By this, electrostatic trouble between the conductive light-shielding film and the pad portions is restrained.

Abstract: To improve the light-shading performance of an electrically-conductive light-shading layer in a liquid crystal display device including polycrystalline SiTFT made on a quartz glass substrate for driving a pixel electrode, and including the electrically-conductive light-shading layer located in a level above the polycrystalline SiTFT and below the pixel electrode, the electrically-conductive light shading layer is stacked on a smoothed inter-layer insulating film which is smoothed by CMP, for example.

Abstract: A liquid crystal display device is so constructed that the scattered or reflected incident rays and even the return rays are prevented from entering the transistor part. The device is free from the problem of photoelectric current leakage. The device comprises an active substrate with a pixel transistor TFT thereon and a counter substrate that faces the active substrate via liquid crystal therebetween, wherein light-shielding layers (upper light-shielding layer, and lower light-shielding layer) are formed to be adjacent to the side of the pixel transistor part that faces the counter substrate and adjacent to the side thereof that faces opposite to the counter substrate and wherein the upper light-shielding layer and the lead electrode shield the entire region except the pixel openings from the incident rays that enter the device through the counter substrate.

Abstract: A transmissive display device includes a driving substrate positioned on a emergent side which has both a group of pixels including component units each having a pixel electrode and a switching device, and a black matrix for shielding light from reaching the non-aperture part of each pixel from the incident side. The black matrix has an overlaid structure formed by overlaying a low-reflection metallic layer and a high-reflection metallic layer with an interlayer insulating film provided therebetween. Both layers are patterned, and partially overlap with each other as mutually complement to shield incident light. When observed in plan view from the incident side, the exposing area of the low-reflection layer is enlarged, while the exposing area of the high-reflection metallic layer is reduced to suppress the surface reflectance of the black matrix. Thereby, multiple reflection inside liquid crystal does not occur, and it is possible to prevent contrast deterioration caused by leaked rays.

Abstract: A transmissive display device includes a driving substrate positioned on the emergent side which has both a group of pixels including component units each having a pixel electrode and a switching device, and a black matrix for shielding light from reaching the non-aperture part of each pixel from the incident side. The black matrix has an overlaid structure formed by overlaying a low-reflection metallic layer and a high-reflection metallic layer with an interlayer insulating film provided therebetween. Both layers are patterned, and partially overlap with each other as mutually complement to shield incident light. When observed in plan view from the incident side, the exposing area of the low-reflection layer is enlarged, while the exposing area of the high-reflection metallic layer is reduced to suppress the surface reflectance of the black matrix. Thereby, multiple reflection inside liquid crystal does not occur, and it is possible to prevent contrast deterioration caused by leaked rays.

Abstract: To give an electric shield function and an electric contact function to a light shielding film formed on a drive substrate.An active matrix display device includes a drive substrate 1 having pixels 4, an opposed substrate 2 having an opposed electrode 5, and a liquid crystal 3 held in a space defined between the drive substrate 1 and the opposed substrate 2. An upper layer portion of the drive substrate 1 includes pixel electrodes 6 formed individually for the pixels 4. A lower layer portion of the drive substrate 1 includes thin-film transistors 7 for individually driving the pixel electrodes 6, scanning lines 8, and signal lines 9. A light shielding film having conductivity is interposed between the upper layer portion and the lower layer portion, and is divided into mask shielding films 16M and pad shielding films 16P. Each mask shielding film 16M is continuously patterned along each row of the pixels 4 to partially shield at least the corresponding thin-film transistor 7.

Abstract: A synthetic quartz glass substrate (1) supporting active elements is formed of high-purity synthetic quartz glass having, a hydroxyl group content of 200 ppm or below and chlorine group content of 50 ppm or below. The substrate (1) may have an impurity level of 1 ppm or less sodium and 1 ppm or less aluminum. TFTs (6), i.e., active elements, and picture element electrodes (7) are formed on the surface of the synthetic quartz glass substrate (1) to construct a driving panel for a liquid crystal display of an active matrix type. A liquid crystal panel is formed by disposing the driving panel and a counter substrate (2) opposite to each other and sandwiching a liquid crystal layer (3) between the driving panel and the counter substrate (2).