Abstract: Certain embodiments provide a method for forming the metal wiring including a process for forming a metal layer and an organic film on a semiconductor substrate in this order, a process for forming a resist pattern including carbon on a surface of the organic film, a process for etching the organic film for exposing from between the resist pattern by using fluorine-based first gas which does not include oxygen, a process for forming a first sidewall film on a sidewall of the resist pattern during the etching process for using the first gas, and a process for etching the metal layer for exposing from between the resist pattern having the first sidewall film formed thereon.

Abstract: According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate having first and second main surfaces, and a through hole passing through between the first and second main surfaces, a pad on the first main surface, a through electrode in the through hole, and a connection structure including a connection portion to directly connect the pad and the through electrode, and another connection portion to indirectly connect the pad and the through electrode. The method includes forming an isolation region in the first main surface, the isolation region being in a region where the through electrode is to be formed and being in a region other than the region where the through hole is to be formed, forming the pad, and forming the through hole by processing the substrate to expose a part of the pad.

Abstract: An edge detection method includes preparing a transparent substrate which includes a first main face having a first main region and a first peripheral region and a second main face having a second main region and a second peripheral region, the first peripheral region having an inclination angle of ?a1 and the second peripheral region having an inclination angle of ?a2, causing measuring light to enter the first peripheral region from a direction perpendicular to the first main region, detecting a non-emitting region where the measuring light is not emitted from the second peripheral region, and detecting an edge of the transparent substrate on the basis of the non-emitting region, wherein if a refractive index of the transparent substrate is n, the inclination angles ?a1 and ?a2satisfy the following expression: n×sin(?a1+?a2?arcsin(sin ?a1/n))?1.

Abstract: According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate having first and second main surfaces, and a through hole passing through between the first and second main surfaces, a pad on the first main surface, a through electrode in the through hole, and a connection structure including a connection portion to directly connect the pad and the through electrode, and another connection portion to indirectly connect the pad and the through electrode. The method includes forming an isolation region in the first main surface, the isolation region being in a region where the through electrode is to be formed and being in a region other than the region where the through hole is to be formed, forming the pad, and forming the through hole by processing the substrate to expose a part of the pad.

Abstract: An edge detection method includes preparing a transparent substrate which includes a first main face having a first main region and a first peripheral region and a second main face having a second main region and a second peripheral region, the first peripheral region having an inclination angle of ?a1 and the second peripheral region having an inclination angle of ?a2, causing measuring light to enter the first peripheral region from a direction perpendicular to the first main region, detecting a non-emitting region where the measuring light is not emitted from the second peripheral region, and detecting an edge of the transparent substrate on the basis of the non-emitting region, wherein if a refractive index of the transparent substrate is n, the inclination angles ?a1 and ?a2 satisfy the following expression: n×sin(?a1+?a2?arcsin(sin ?a1/n))?1