Abstract: An imaging apparatus includes: an infrared light source; and a solid-state imaging device. The solid-state imaging device includes: light receivers that convert incident light from the subject to signal charges; a signal storage that stores the signal charges; a signal drain into which the signal charges are discharged; microlenses disposed on the light receivers; and openings through which the incident light enters the light receivers. The solid-state imaging device reads and discharges the signal charges in response to a signal drain voltage being switched between on and off. Each microlens is disposed such that the center of the microlens is displaced toward the center of the pixel array from the center of the corresponding light receiver, as the position of the microlens is closer to the perimeter of the pixel array. The openings have different shapes according to the positions of the openings in the pixel array.

Abstract: A package in which a bag formed from a polyethylene-based resin film having a small thickness, more specifically a thickness of 300 ?m or less is filled with crushed polysilicon (Si chunks) and damage to the bag by the Si chunks is effectively prevented. In a polysilicon package in which the bag 1 formed from a polyethylene-based resin having an average thickness of 300 ?m or less is filled with the Si chunks 4, the bag 1 has a heat-sealed bonded part 2 at the bottom and is filled with the Si chunks 4 to ensure that the maximum expansion of the bag 1 becomes 5% or less when the bag 1 is held in an upright state with the bottom as a ground contact surface.

Abstract: A solid-state image sensor including photoelectric conversion parts having a vertical overflow drain structure is made usable as, for example, a distance measuring sensor with high accuracy. In the solid-state image sensor, a pixel array part is formed in a well region of a second conductive type formed at a surface part of a semiconductor substrate of a first conductive type. In the pixel array part, photoelectric conversion parts each of which converts incident light into signal charges and has the vertical overflow drain structure (VOD) are arranged in a matrix form. Substrate discharge pulse signal ?Sub for controlling potential of the VOD is applied to a signal terminal. An impurity induced part into which impurity of the first type is induced is formed below a connecting part in the semiconductor substrate.

Abstract: The object is to provide a tumor antigen peptide that is specifically presented on a cancer and a cancer stem cell, and a pharmaceutical composition, etc. that is useful for the prevention and/or treatment of a cancer and contains the above peptide as an active ingredient. The above object has been accomplished by providing a BORIS-derived partial peptide belonging to isoform A or C or subfamily 5 or 6, a polynucleotide encoding the peptide, a pharmaceutical composition containing the above as an active ingredient, and an agent for the prevention and/or treatment of a cancer, the agent containing the above as an active ingredient and inducing CTLs.

Abstract: Read electrodes are provided to drain signal charge of pixels from photoelectric conversion units provided in the pixels separately to a vertical transfer unit. During a first exposure period during which an object is illuminated with infrared light, signal charge obtained from a first pixel, and signal charge obtained from a second pixel adjacent to the first pixel, are added together in the vertical transfer unit to produce first signal charge. During a second exposure period during which the object is not illuminated with infrared light, signal charge obtained from the first pixel, and signal charge obtained from the second pixel adjacent to the first pixel, are transferred without being added to the first signal charge in the vertical transfer unit, and are added together in another packet to produce second signal charge.

Abstract: A package in which a bag formed from a polyethylene-based resin film having a small thickness, more specifically a thickness of 300 ?m or less is filled with crushed polysilicon (Si chunks) and damage to the bag by the Si chunks is effectively prevented. In a polysilicon package in which the bag 1 formed from a polyethylene-based resin having an average thickness of 300 ?m or less is filled with the Si chunks 4, the bag 1 has a heat-sealed bonded part 2 at the bottom and is filled with the Si chunks 4 to ensure that the maximum expansion of the bag 1 becomes 5% or less when the bag 1 is held in an upright state with the bottom as a ground contact surface.

Abstract: Provided is an a imaging device that acquires a distance image excluding influence of background light in one frame scanning period and acquires a visible image in a separate frame from a single imaging sensor, and includes an infrared light source that emits infrared light, and a solid state imaging device including a plurality of first pixels and a plurality of second pixels, which respectively include vertical overflow drains, and are arranged in a matrix on a semiconductor substrate, the plurality of first pixels converting the infrared light into signal charges, and the plurality of second pixels converting visible light into signal charges.

Abstract: The present invention provides electric-resistance welded steel pipe optimal for applications such as production of shale gas which is comprised of steel having a chemical composition which contains, by mass %, respectively, C: 0.08 to 0.18%, Si: 0.01% to 0.50%, Mn: 1.30 to 2.1%, Al: 0.001 to 0.10%, Nb: 0.005 to 0.08%, and Ti: 0.005 to 0.03%, is limited to N 0.008% or less, P: 0.020% or less, and S: 0.010% or less, and has a balance of Fe and unavoidable impurities, wherein a structure at a center part of thickness is 40% to 70% by area of ferrite phase having a circle-equivalent diameter of 1.0 ?m to 10.0 ?m and a balance of a low temperature transformation phase comprising a bainite phase, and Ceq satisfies 0.32?Ceq?0.60.

Abstract: Provided are an imaging apparatus with reduced variations in ranging results and increased ranging precision, and its driving method. The imaging apparatus includes a near-infrared light source and a solid-state imaging device. The solid-state imaging device includes a photoelectric conversion region in which a plurality of photoelectric converters is arranged in a matrix, a plurality of vertical transfer units for transferring signal charges generated in the photoelectric converters in a direction perpendicular to a row direction of the photoelectric conversion region, a plurality of horizontal transfer units for transferring the signal charges in a direction horizontal to the row direction of the photoelectric conversion region, and a plurality of charge detectors for amplifying and outputting the signal charges.

Abstract: Provided is an a imaging device that acquires a distance image excluding influence of background light in one frame scanning period and acquires a visible image in a separate frame from a single imaging sensor, and includes an infrared light source that emits infrared light, and a solid state imaging device including a plurality of first pixels and a plurality of second pixels, which respectively include vertical overflow drains, and are arranged in a matrix on a semiconductor substrate, the plurality of first pixels converting the infrared light into signal charges, and the plurality of second pixels converting visible light into signal charges.

Abstract: An electronic device module includes a first substrate having a first wiring layer and a first alignment mark, the first alignment mark being transparent in a visible region of the electromagnetic spectrum, and a second substrate facing a part of the first substrate and having a second wiring layer and a second alignment mark facing the first alignment mark.

Abstract: Read electrodes are provided to drain signal charge of pixels from photoelectric conversion units provided in the pixels separately to a vertical transfer unit. During a first exposure period during which an object is illuminated with infrared light, signal charge obtained from a first pixel, and signal charge obtained from a second pixel adjacent to the first pixel, are added together in the vertical transfer unit to produce first signal charge. During a second exposure period during which the object is not illuminated with infrared light, signal charge obtained from the first pixel, and signal charge obtained from the second pixel adjacent to the first pixel, are transferred without being added to the first signal charge in the vertical transfer unit, and are added together in another packet to produce second signal charge.

Abstract: A solid-state imaging device includes: a plurality of photoelectric conversion units arranged in rows and columns in a pixel region; a plurality of vertical transfer units arranged for corresponding columns of the photoelectric conversion units, and transfer, in a column direction, the signal charges read from the corresponding columns of the photoelectric conversion units; a first and a second horizontal transfer units arranged in parallel, and transfer, in a row direction, the signal charges transferred by the vertical transfer units; and a first and a second output units which (i) include floating diffusion units each formed in a region adjacent to an output end of a corresponding one of the first and the second horizontal transfer units and (ii) output, as electric signals, the transferred signal charges, wherein the floating diffusion units are disposed at greater intervals than adjacent ones of the horizontal transfer units.

Abstract: The process for producing polycrystalline silicon by feeding a reaction gas containing a silane gas and a hydrogen gas into a reaction vessel equipped with silicon core members erected on the electrodes, heating the silicon core members by flowing an electric current thereto to a temperature at which silicon deposits, forming polycrystalline silicon rods by allowing the formed silicon to deposit on the silicon core members, and discharging the discharge gas after the reaction from the reaction vessel, wherein the discharge gas discharged from the reaction vessel is quenched so that the temperature thereof drops from 800° C. down to 500° C. in not longer than 0.1 second.

Abstract: A solid-state imaging device includes photoelectric conversion units, vertical transfer units including vertical transfer electrodes, a horizontal transfer unit, a distribution transfer unit including distribution transfer electrodes, and first light-shield layers and second light-shield layers provided on the vertical transfer units and the distribution transfer unit. The first light-shield layers and the second light-shield layers are conductive. The first light-shield layers are provided in a layer different from a layer in which the second light-shield layers are provided. At least one of the first light-shield layers serves as an interconnect electrically connected to the vertical transfer electrodes included in the same row, and at least one of the first light-shield layers on the distribution transfer unit serves as an interconnect electrically connected the distribution transfer electrodes. The first light-shield layers are disposed so as not to overlap with the horizontal transfer unit.

Abstract: An electronic device module includes a first substrate having a first wiring layer and a first alignment mark, the first alignment mark being transparent in a visible region of the electromagnetic spectrum, and a second substrate facing a part of the first substrate and having a second wiring layer and a second alignment mark facing the first alignment mark.

Abstract: A solid-state imaging device includes photoelectric conversion units, vertical transfer units including vertical transfer electrodes, a horizontal transfer unit, a distribution transfer unit including distribution transfer electrodes, and first light-shield layers and second light-shield layers provided on the vertical transfer units and the distribution transfer unit. The first light-shield layers and the second light-shield layers are conductive. The first light-shield layers are provided in a layer different from a layer in which the second light-shield layers are provided. At least one of the first light-shield layers serves as an interconnect electrically connected to the vertical transfer electrodes included in the same row, and at least one of the first light-shield layers on the distribution transfer unit serves as an interconnect electrically connected the distribution transfer electrodes. The first light-shield layers are disposed so as not to overlap with the horizontal transfer unit.

Abstract: [Problem] To provide a process for producing polycrystalline silicon, which is capable of effectively preventing the formation of phosphorus-silicon compounds in the discharge gas discharged from the reaction vessel, and makes it possible to reuse a silane compound contained in the discharge gas. [Means for Solution] The process for producing polycrystalline silicon by feeding a reaction gas containing a silane gas and a hydrogen gas into a reaction vessel equipped with silicon core members erected on the electrodes, heating the silicon core members by flowing an electric current thereto to a temperature at which silicon deposits, forming polycrystalline silicon rods by allowing the formed silicon to deposit on the silicon core members, and discharging the discharge gas after the reaction from the reaction vessel, wherein the discharge gas discharged from the reaction vessel is quenched so that the temperature thereof drops from 800° C. down to 500° C. in not longer than 0.1 second.

Abstract: In a device for controlling a focus to an optical disc having a land section and a groove section, the control is performed so as to avoid a focus step difference at a land-area/groove-area switching point. When performing write-in or readout of data to an optical disc on which a land area and a groove area are continuously formed, using an optical pickup, there are provided a land learning unit (1) for determining a focus position in the land area, a groove learning unit (2) for determining a focus position in the groove area, and a focus position calculation unit (3) for determining a focus position in an area where the land area and the groove area are switched, and the focus position of the optical pickup is moved so that it is located at the third focus position when the switching signal is inverted according to the switching between the land area and the groove area.

Abstract: In a device for controlling a focus to an optical disc having a land section and a groove section, the control is performed so as to avoid a focus step difference at a land-area/groove-area switching point. When performing write-in or readout of data to an optical disc on which a land area and a groove area are continuously formed, using an optical pickup, there are provided a land learning unit (1) for determining a focus position in the land area, a groove learning unit (2) for determining a focus position in the groove area, and a focus position calculation unit (3) for determining a focus position in an area where the land area and the groove area are switched, and the focus position of the optical pickup is moved so that it is located at the third focus position when the switching signal is inverted according to the switching between the land area and the groove area.