Abstract: In a method for manufacturing an organic transistor element, an electrode is subjected to wet etching into a predetermined pattern on an organic semiconductor layer. In the process for performing wet etching on the electrode so as to obtain a predetermined pattern, an etching liquid containing a dopant of the organic semiconductor layer is used to perform wet etching on the electrode and, simultaneously, the organic semiconductor layer is doped with the dopant.

Abstract: The invention is an organic luminescence transistor device including: a substrate; an assistance electrode layer provided on a side of an upper surface of the substrate; an insulation film provided on a side of an upper surface of the assistance electrode layer; a first electrode provided locally on a side of an upper surface of the insulation film, the first electrode covering an area of a predetermined size; an electric-charge-injection inhibiting layer provided on an upper surface of the first electrode, the electric-charge-injection inhibiting layer having a shape larger than that of the first electrode in a plan view; an electric-charge injection layer provided on the side of an upper surface of the insulation film at an area not provided with the first electrode or the electric-charge-injection inhibiting layer and on an upper surface of the electric-charge-injection inhibiting layer; a luminescent layer provided on an upper surface of the electric-charge injection layer; and a second electrode layer pr

Abstract: The invention is an organic luminescence transistor device including: a substrate; an assistance electrode layer provided on a side of an upper surface of the substrate; an insulation film provided on a side of an upper surface of the assistance electrode layer; a first electrode provided locally on a side of an upper surface of the insulation film, the first electrode covering an area of a predetermined size; an electric-charge-injection inhibiting layer provided on an upper surface of the first electrode, the electric-charge-injection inhibiting layer having a shape larger than that of the first electrode in a plan view; an electric-charge injection layer provided on the side of an upper surface of the insulation film at an area not provided with the first electrode or the electric-charge-injection inhibiting layer and on an upper surface of the electric-charge-injection inhibiting layer; a luminescent layer provided on an upper surface of the electric-charge injection layer; and a second electrode layer pr

Abstract: An organic light-emitting transistor having a source electrode layer; a drain electrode layer facing the source electrode layer; an organic light-emitting layer formed between the source electrode layer and the drain electrode layer; a semiconductor layer formed between the organic light-emitting layer and the source electrode layer; and a gate electrode layer deposited to face through a gate insulation film to one face of the source electrode layer opposite to the other face facing the drain electrode layer. The organic light-emitting transistor further comprises: a charge-carrier suppression layer formed between the organic light-emitting layer and the source electrode layer to have an aperture; and a relay region formed between the charge-carrier suppression layer and the source electrode layer to relay charge-carriers from the source electrode layer to the aperture.

Abstract: [Problems] To provide a method of forming metal wiring capable of forming metal wiring of ultrathin film and an electronic part including the metal wiring of ultrathin film. [Solving Means] A compound having an ethoxysilane group or a methoxysilane group and a thiol group is used. A number of metal particles each having a surface previously covered with the compound by chemical bond of the thiol group of the compound are prepared. The metal particles are fixed to a base surface by chemically bonding a silanol group produced by hydrolyzing the ethoxysilane group or the methoxysilane group to the base surface, the metal wiring being to be formed on the base surface. The metal wiring may be formed only from the metal particles, or electroless plating is performed by using the metal particles as a catalyst to thickly provide the same type or a different type of metal.

Abstract: The invention is an organic luminescence transistor device including: a substrate; a first electrode layer provided on a side of an upper surface of the substrate; a layered structure provided locally on a side of an upper surface of the first electrode layer, the layered structure covering an area of a predetermined size in a plan view, the layered structure including an insulation layer, an assistance electrode layer and an electric-charge-injection inhibiting layer in this order; an organic EL layer provided on the side of an upper surface of the first electrode layer at least at an area not provided with the layered structure; and a second electrode layer provided on a side of an upper surface of the organic EL layer.

Abstract: Disclosed is an organic light-emitting transistor device comprising a substrate, a first electrode layer formed on the upper side of the substrate, a multilayer structure formed locally on the upper side of the first electrode layer in a predetermined size and sequentially having an insulating layer, an auxiliary electrode layer and a charge injection-suppressing layer in this order, an organic EL layer formed on the upper side of the first electrode layer where at least the multilayer structure is not formed, and a second electrode layer formed on the upper side of the organic EL layer. This organic light-emitting transistor device is characterized in that the charge injection-suppressing layer is formed larger than the auxiliary electrode when viewed in plan.

Abstract: The invention is an organic luminescence transistor device including: a substrate; an assistance electrode layer provided on a side of an upper surface of the substrate; an insulation film provided on a side of an upper surface of the assistance electrode layer; a first electrode provided locally on a side of an upper surface of the insulation film, the first electrode covering an area of a predetermined size; an electric-charge-injection inhibiting layer provided on an upper surface of the first electrode, the electric-charge-injection inhibiting layer having a shape larger than that of the first electrode in a plan view; an electric-charge injection layer provided on the side of an upper surface of the insulation film at an area not provided with the first electrode or the electric-charge-injection inhibiting layer and on an upper surface of the electric-charge-injection inhibiting layer; a luminescent layer provided on an upper surface of the electric-charge injection layer; and a second electrode layer pr

Abstract: In a method for manufacturing an organic transistor element, an electrode is subjected to wet etching into a predetermined pattern on an organic semiconductor layer. In the process for performing wet etching on the electrode so as to obtain a predetermined pattern, an etching liquid containing a dopant of the organic semiconductor layer is used to perform wet etching on the electrode and, simultaneously, the organic semiconductor layer is doped with the dopant.

Abstract: An organic light-emitting transistor having a source electrode layer; a drain electrode layer facing the source electrode layer; an organic light-emitting layer formed between the source electrode layer and the drain electrode layer; a semiconductor layer formed between the organic light-emitting layer and the source electrode layer; and a gate electrode layer deposited to face through a gate insulation film to one face of the source electrode layer opposite to the other face facing the drain electrode layer. The organic light-emitting transistor further comprises: a charge-carrier suppression layer formed between the organic light-emitting layer and the source electrode layer to have an aperture; and a relay region formed between the charge-carrier suppression layer and the source electrode layer to relay charge-carriers from the source electrode layer to the aperture.

Abstract: The invention is an organic luminescence transistor device including: a substrate; a first electrode layer provided on a side of an upper surface of the substrate; a layered structure provided locally on a side of an upper surface of the first electrode layer, the layered structure covering an area of a predetermined size in a plan view, the layered structure including an insulation layer, an assistance electrode layer and an electric-charge-injection inhibiting layer in this order; an organic EL layer provided on the side of an upper surface of the first electrode layer at least at an area not provided with the layered structure; and a second electrode layer provided on a side of an upper surface of the organic EL layer.

Abstract: The invention is an organic luminescence transistor device including: a substrate; an assistance electrode layer provided on an upper surface of the substrate; an insulation film provided on an upper surface of the assistance electrode layer; a first electrode provided locally on an upper surface of the insulation film, the first electrode covering an area of a predetermined size; an electric-charge-injection inhibiting layer provided on an upper surface of the first electrode, the electric-charge-injection inhibiting layer having the same size as the first electrode in a plan view; an electric-charge injection layer provided on the upper surface of the insulation film at an area not provided with the first electrode and on an upper surface of the electric-charge-injection inhibiting layer; a luminescent layer provided on an upper surface of the electric-charge injection layer; and a second electrode layer provided on the luminescent layer.

Abstract: The invention is an organic luminescence transistor device including: a substrate; an assistance electrode layer provided on a side of an upper surface of the substrate; an insulation film provided on a side of an upper surface of the assistance electrode layer; a first electrode provided locally on a side of an upper surface of the insulation film, the first electrode covering an area of a predetermined size; an electric-charge-injection inhibiting layer provided on an upper surface of the first electrode, the electric-charge-injection inhibiting layer having a shape larger than that of the first electrode in a plan view; an electric-charge injection layer provided on the side of an upper surface of the insulation film at an area not provided with the first electrode or the electric-charge-injection inhibiting layer and on an upper surface of the electric-charge-injection inhibiting layer; a luminescent layer provided on an upper surface of the electric-charge injection layer; and a second electrode layer pr

Abstract: A light-emitting element that comprises a light emission layer that is deposited between first and second electrodes that lie opposite one another in parallel, an organic semiconductor layer that is deposited between the light emission layer and the first electrode, and an auxiliary electrode that is disposed via an insulation layer on the opposite side of the face of the first electrode opposite the second electrode, the light-emitting element further comprising a third electrode that is disposed inside the organic semiconductor layer.

Abstract: A light-emitting element comprises an auxiliary electrode provided on a substrate; an insulating layer provided on the auxiliary electrode; a first electrode supported by the insulating layer; a carrier injection layer made of an organic conductive material having carrier injecting property, and making contact with the first electrode; a light emission layer supported by the carrier injection layer; and a second electrode supported by the light emission layer, and a carrier dispersion layer having lower resistance than the carrier injection layer is provided between the carrier injection layer and the light emission layer. With this arrangement, a light-emitting element having good light emission characteristics in-a pixel is provided.

Abstract: A display apparatus (1) for generating a stereoscopic image by superimposing a plurality of images at a predetermined interval from each other on the view line of the viewer, the apparatus comprising: a first display unit (11) having a plurality of emission areas (11-1) for emitting a light, disposed in a discrete manner in a plane of a display screen and a plurality of transmission areas (11-2) for transmitting a light, disposed in a discrete manner in the plane of the display screen except for areas occupied by said plurality of emission areas; and a second display unit (12) disposed behind the first display unit as seen from the viewer.

Abstract: A three-dimensional image display device including at least one transmissive light-emitting display panel and a second light-emitting display panel located behind the transmissive panel. The transmissive panel has a plurality of light-emitting portions arranged in two dimensions and classified into plural linear groups. The transmissive panel has a plurality of bus lines each of which is connected to and overlapping with the light-emitting portions in per group. Each light-emitting portion includes a light-emitting layer made of an organic compound exhibiting electroluminescence. Each overlapped portion of the bus line has an area equal to or smaller than 5% of an area of each of the light-emitting portions.

Abstract: An image display device includes at least one transmissive display panel arranged at different depth positions in a direction normal to a display surface of the image display device. Each of the transmissive display panels includes a light-emitting layer that is sandwiched between a front side transmissive film and a rear side transmissive film. The rear side transmissive film has an interface with a maximum refractive index difference that causes an efficiency of light emitted from the light-emitting layer to become smaller than a front side light emission efficiency in the characteristics of light-emission efficiency, which changes with respect to a film thickness of the transmissive film due to optical interference.

Abstract: A mask assembly includes a frame and at least one linear element secured onto the frame. The linear elements define a masking part. The masking part has at least one opening. The openings are made by removing predetermined linear elements from those secured to the frame.

Abstract: A stereoscopic image display apparatus includes at least two linear image display devices which respectively display linear images in response to image signals. The two linear image display devices are periodically moved by a mechanical scan mechanism along a plurality of locus planes substantially parallel to each other. The mechanical scan mechanism may have a configuration which belt-drives the at least two linear image display devices fixed to a belt, or a configuration which rotationally drives the at least two linear image display devices provided on a disc. The stereoscopic image display apparatus can display a bright and extremely clear stereoscopic image without using a complicated optical system and a light transmissible display panel.