Patents by Inventor Takuya Hirohashi
Takuya Hirohashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11978742Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nm? and less than or equal to 10 nm?.Type: GrantFiled: April 20, 2023Date of Patent: May 7, 2024Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masahiro Takahashi, Takuya Hirohashi, Masashi Tsubuku, Noritaka Ishihara, Masashi Oota
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Publication number: 20240055533Abstract: To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.Type: ApplicationFiled: October 25, 2023Publication date: February 15, 2024Inventors: Shunpei YAMAZAKI, Masayuki SAKAKURA, Ryosuke WATANABE, Junichiro SAKATA, Kengo AKIMOTO, Akiharu MIYANAGA, Takuya HIROHASHI, Hideyuki KISHIDA
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Publication number: 20230369341Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nm? and less than or equal to 10 nm?.Type: ApplicationFiled: April 20, 2023Publication date: November 16, 2023Inventors: Masahiro TAKAHASHI, Takuya HIROHASHI, Masashi TSUBUKU, Noritaka ISHIHARA, Masashi OOTA
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PARTICLE, ELECTRODE, POWER STORAGE DEVICE, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING ELECTRODE
Publication number: 20230361290Abstract: To increase capacity per weight of a power storage device, a particle includes a first region, a second region in contact with at least part of a surface of the first region and located on the outside of the first region, and a third region in contact with at least part of a surface of the second region and located on the outside of the second region. The first and the second regions contain lithium and oxygen. At least one of the first region and the second region contains manganese. At least one of the first and the second regions contains an element M. The first region contains a first crystal having a layered rock-salt structure. The second region contains a second crystal having a layered rock-salt structure. An orientation of the first crystal is different from an orientation of the second crystal.Type: ApplicationFiled: June 21, 2023Publication date: November 9, 2023Inventors: Takahiro KAWAKAMI, Teruaki OCHIAI, Shuhei YOSHITOMI, Takuya HIROHASHI, Mako MOTOYOSHI, Yohei MOMMA, Junya GOTO -
Publication number: 20230309301Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a first film including oxygen. The method further includes forming a second film including nitrogen. The method further includes etching surfaces of the first film and the second film using a substance including a halogen. The method further includes forming a third film including nitrogen on the surfaces of the first film and the second film. The third film is formed by alternately performing first processes and second processes, wherein each of the first processes forms a portion of the third film, and each of the second processes etches a portion of the third film using a substance including a halogen.Type: ApplicationFiled: June 20, 2022Publication date: September 28, 2023Applicant: Kioxia CorporationInventors: Yuta KAMIYA, Kenichiro TORATANI, Kazuhiro MATSUO, Shoji HONDA, Takuya HIROHASHI, Borong CHEN, Kota TAKAHASHI
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Patent number: 11715801Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.Type: GrantFiled: March 7, 2022Date of Patent: August 1, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Junichiro Sakata, Takuya Hirohashi, Hideyuki Kishida
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Particle, electrode, power storage device, electronic device, and method for manufacturing electrode
Patent number: 11710823Abstract: To increase capacity per weight of a power storage device, a particle includes a first region, a second region in contact with at least part of a surface of the first region and located on the outside of the first region, and a third region in contact with at least part of a surface of the second region and located on the outside of the second region. The first and the second regions contain lithium and oxygen. At least one of the first region and the second region contains manganese. At least one of the first and the second regions contains an element M. The first region contains a first crystal having a layered rock-salt structure. The second region contains a second crystal having a layered rock-salt structure. An orientation of the first crystal is different from an orientation of the second crystal.Type: GrantFiled: June 29, 2022Date of Patent: July 25, 2023Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Takahiro Kawakami, Teruaki Ochiai, Shuhei Yoshitomi, Takuya Hirohashi, Mako Motoyoshi, Yohei Momma, Junya Goto -
Patent number: 11652110Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nm? and less than or equal to 10 nm?.Type: GrantFiled: January 8, 2021Date of Patent: May 16, 2023Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masahiro Takahashi, Takuya Hirohashi, Masashi Tsubuku, Noritaka Ishihara, Masashi Oota
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PARTICLE, ELECTRODE, POWER STORAGE DEVICE, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING ELECTRODE
Publication number: 20220352510Abstract: To increase capacity per weight of a power storage device, a particle includes a first region, a second region in contact with at least part of a surface of the first region and located on the outside of the first region, and a third region in contact with at least part of a surface of the second region and located on the outside of the second region. The first and the second regions contain lithium and oxygen. At least one of the first region and the second region contains manganese. At least one of the first and the second regions contains an element M. The first region contains a first crystal having a layered rock-salt structure. The second region contains a second crystal having a layered rock-salt structure. An orientation of the first crystal is different from an orientation of the second crystal.Type: ApplicationFiled: June 29, 2022Publication date: November 3, 2022Inventors: Takahiro KAWAKAMI, Teruaki OCHIAI, Shuhei YOSHITOMI, Takuya HIROHASHI, Mako MOTOYOSHI, Yohei MOMMA, Junya GOTO -
Particle, electrode, power storage device, electronic device, and method for manufacturing electrode
Patent number: 11394025Abstract: To increase capacity per weight of a power storage device, a particle includes a first region, a second region in contact with at least part of a surface of the first region and located on the outside of the first region, and a third region in contact with at least part of a surface of the second region and located on the outside of the second region. The first and the second regions contain lithium and oxygen. At least one of the first region and the second region contains manganese. At least one of the first and the second regions contains an element M. The first region contains a first crystal having a layered rock-salt structure. The second region contains a second crystal having a layered rock-salt structure. An orientation of the first crystal is different from an orientation of the second crystal.Type: GrantFiled: July 21, 2020Date of Patent: July 19, 2022Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Takahiro Kawakami, Teruaki Ochiai, Shuhei Yoshitomi, Takuya Hirohashi, Mako Motoyoshi, Yohei Momma, Junya Goto -
Publication number: 20220190166Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.Type: ApplicationFiled: March 7, 2022Publication date: June 16, 2022Inventors: Junichiro SAKATA, Takuya HIROHASHI, Hideyuki KISHIDA
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Publication number: 20220123150Abstract: It is an object to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. A semiconductor device having a stacked-layer structure of a gate insulating layer; a first gate electrode in contact with one surface of the gate insulating layer; an oxide semiconductor layer in contact with the other surface of the gate insulating layer and overlapping with the first gate electrode; and a source electrode, a drain electrode, and an oxide insulating layer which are in contact with the oxide semiconductor layer is provided, in which the nitrogen concentration of the oxide semiconductor layer is 2×1019 atoms/cm3 or lower and the source electrode and the drain electrode include one or more of tungsten, platinum, and molybdenum.Type: ApplicationFiled: January 3, 2022Publication date: April 21, 2022Inventors: Shunpei YAMAZAKI, Masahiro TAKAHASHI, Takuya HIROHASHI, Katsuaki TOCHIBAYASHI, Yasutaka NAKAZAWA, Masatoshi YOKOYAMA
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Patent number: 11309430Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.Type: GrantFiled: June 19, 2020Date of Patent: April 19, 2022Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Junichiro Sakata, Takuya Hirohashi, Hideyuki Kishida
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Publication number: 20220085053Abstract: According to one embodiment, a semiconductor device includes: a stacked body including an insulating layer, and a conductive layer containing molybdenum; an aluminum oxide layer provided between the insulating layer and the conductive layer; and a protective layer in contact with the aluminum oxide layer, containing one of carbon, nitrogen, or sulfur bonded to aluminum in the aluminum oxide layer, and also in contact with the conductive layer.Type: ApplicationFiled: September 3, 2021Publication date: March 17, 2022Applicant: Kioxia CorporationInventors: Masayuki KITAMURA, Takuya HIROHASHI, Shigeru KINOSHITA, Hiroshi TOYOTA
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Publication number: 20210384356Abstract: To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced.Type: ApplicationFiled: June 17, 2021Publication date: December 9, 2021Inventors: Shunpei YAMAZAKI, Masayuki SAKAKURA, Ryosuke WATANABE, Junichiro SAKATA, Kengo AKIMOTO, Akiharu MIYANAGA, Takuya HIROHASHI, Hideyuki KISHIDA
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Publication number: 20210225887Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nm? and less than or equal to 10 nm?.Type: ApplicationFiled: January 8, 2021Publication date: July 22, 2021Inventors: Masahiro TAKAHASHI, Takuya HIROHASHI, Masashi TSUBUKU, Noritaka ISHIHARA, Masashi OOTA
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Patent number: 10892282Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nm? and less than or equal to 10 nm?.Type: GrantFiled: July 2, 2018Date of Patent: January 12, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masahiro Takahashi, Takuya Hirohashi, Masashi Tsubuku, Noritaka Ishihara, Masashi Oota
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PARTICLE, ELECTRODE, POWER STORAGE DEVICE, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING ELECTRODE
Publication number: 20200350576Abstract: To increase capacity per weight of a power storage device, a particle includes a first region, a second region in contact with at least part of a surface of the first region and located on the outside of the first region, and a third region in contact with at least part of a surface of the second region and located on the outside of the second region. The first and the second regions contain lithium and oxygen. At least one of the first region and the second region contains manganese. At least one of the first and the second regions contains an element M. The first region contains a first crystal having a layered rock-salt structure. The second region contains a second crystal having a layered rock-salt structure. An orientation of the first crystal is different from an orientation of the second crystal.Type: ApplicationFiled: July 21, 2020Publication date: November 5, 2020Inventors: Takahiro KAWAKAMI, Teruaki OCHIAI, Shuhei YOSHITOMI, Takuya HIROHASHI, Mako MOTOYOSHI, Yohei MOMMA, Junya GOTO -
Publication number: 20200321470Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.Type: ApplicationFiled: June 19, 2020Publication date: October 8, 2020Inventors: Junichiro SAKATA, Takuya HIROHASHI, Hideyuki KISHIDA
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Particle, electrode, power storage device, electronic device, and method for manufacturing electrode
Patent number: 10749174Abstract: To increase capacity per weight of a power storage device, a particle includes a first region, a second region in contact with at least part of a surface of the first region and located on the outside of the first region, and a third region in contact with at least part of a surface of the second region and located on the outside of the second region. The first and the second regions contain lithium and oxygen. At least one of the first region and the second region contains manganese. At least one of the first and the second regions contains an element M. The first region contains a first crystal having a layered rock-salt structure. The second region contains a second crystal having a layered rock-salt structure. An orientation of the first crystal is different from an orientation of the second crystal.Type: GrantFiled: August 28, 2018Date of Patent: August 18, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takahiro Kawakami, Teruaki Ochiai, Shuhei Yoshitomi, Takuya Hirohashi, Mako Motoyoshi, Yohei Momma, Junya Goto