Abstract: A fluid circulation circuit includes a flow passage switching valve. The flow passage switching valve includes a body and a switcher. The body includes a first inlet, a second inlet, and outlets including a first outlet. The switcher is capable of switching a passage configuration to a state in which a fluid that has flowed in from the first inlet flows out of either one of the outlets and a state in which the fluid that has flowed in from the second inlet flows out of either one of the outlets.

Abstract: A three-way catalyst for purifying exhaust including noble metal components, enables sintering of the noble metal to be suppressed even at high temperature, enables carbon monoxide (CO), hydrocarbons (HC), and nitrogen oxides (NOx) to be removed and a method for purifying exhaust gas. A carrier having a honeycomb structure is coated with two or more layers of the catalyst compositions, an upper layer including a heat resistant inorganic oxide supporting Pd and a La-containing oxide, a lower layer including a heat resistant inorganic oxide supporting Rh. The content of La in terms of La2O3 is 9.6 g/L to 23 g/L, the content of Ce in terms of CeO2 is 5 g/L to 20 g/L, and the content of Ba in terms of BaO is 1.2 g/L or less per unit volume of the honeycomb structure.

Abstract: A three-way catalyst for purifying exhaust including noble metal components, enables sintering of the noble metal to be suppressed even at high temperature, enables carbon monoxide (CO), hydrocarbons (HC), and nitrogen oxides (NOx) to be removed and a method for purifying exhaust gas. A carrier having a honeycomb structure is coated with two or more layers of the catalyst compositions, an upper layer including a heat resistant inorganic oxide supporting Pd and a La-containing oxide, a lower layer including a heat resistant inorganic oxide supporting Rh. The content of La in terms of La2O3 is 9.6 g/L to 23 g/L, the content of Ce in terms of CeO2 is 5 g/L to 20 g/L, and the content of Ba in terms of BaO is 1.2 g/L or less per unit volume of the honeycomb structure.

Abstract: A mobile terminal that performs communication with an onboard device includes: a communication control unit configured to control reception of information instructing to switch a sound source which is transmitted from the onboard device, the information including information indicating an application program which is executed in the terminal serving as the sound source, and transmission of a sound, played by an application program operating in a foreground of the terminal, to the onboard device; a switching unit configured to switch an application program having been in operation in a foreground until immediately before, to a background, on the basis of the received information instructing to switch a sound source, and to switch an application program having been in operation in a background until immediately before, to a foreground; and a sound control unit configured to stop playing a sound of the application program having been in operation in a foreground until immediately before, and to start playing a s

Abstract: A mobile terminal that performs communication with an onboard device includes: a communication control unit configured to control reception of information instructing to switch a sound source which is transmitted from the onboard device, the information including information indicating an application program which is executed in the terminal serving as the sound source, and transmission of a sound, played by an application program operating in a foreground of the terminal, to the onboard device; a switching unit configured to switch an application program having been in operation in a foreground until immediately before, to a background, on the basis of the received information instructing to switch a sound source, and to switch an application program having been in operation in a background until immediately before, to a foreground; and a sound control unit configured to stop playing a sound of the application program having been in operation in a foreground until immediately before, and to start playing a s

Abstract: A press working apparatus is provided with a first working unit and a second working unit 14. In the first working unit, a first stage is performed for forming a half-blanked portion 15 with a projecting shape at a region where a through hole P is to be formed in a sheet W. In the second working unit 14, a second stage S2 is performed in which the half-blanked portion 15 is blanked from the sheet W by a second punch 26 and a second die 23. Also in the second stage S2, when a blanked body is blanked from the sheet W, shaving work is performed with respect to a side wall surface Pa on a region of the sheet W where the blanked body has been blanked.

Abstract: Active matrix TFT elements array in which the number of production steps is not increased and the high production yield can be achieved. A semiconductor film is formed by patterning in an elongated island shape between pixel electrodes disposed neighboring to each other in the direction of drain lines to provide a protrusion to prevent shorting across the pixel electrodes even if photoresist film residuals are produced.

Abstract: Thin film transistor elements are disposed on a substrate in a matrix form. The thin film transistor element includes a source electrode, a drain electrode, isolated layer of a semiconductor layer and a gate insulating film, and a gate electrode. Drain wires and gate wires are provided on the substrate, and they are connected to the drain electrode and source electrode, respectively. Each of intersections of the drain wires and the gate wires has another isolated layer of a semiconductor layer and a gate insulating film. Each of the drain wires has an isolated conductive film which is made of the same material as the gate wires. The conductive film is formed to be contact with each of the drain wires so as to electrically support the drain wires each. Pixel electrodes are provided on the substrate.

Abstract: A semiconductor device that has a feature in the spatial relationship between the wiring in a multi-level wiring and the intermediate insulating films. In the lower part of the second and/or subsequent levels of wiring there exist intermediate insulating films that have a pattern which is the same as the pattern of the wiring. Because of this arrangement, the intermediate insulating film does not exist between the wiring on the same level. The first structure of the multi-level wiring has the intermediate insulating films formed in wall-like shape, with the lower end of the intermediate insulating films reaching an underlying insulating layer formed on the surface of the semiconductor substrate. The second structure of the multi-level wiring is a quasi air gap metallization structure.

Abstract: In a semiconductor device, an inter-level insulating film is formed at solid crossing points between upper level interconnections and lower-level interconnections, excepting via hole portions. This means that mechanical support between interconnection levels is given by solid crossing points between interconnections. For this, a semiconductor device having high durabilities against thermal and mechanical impacts can be obtained.Further, since inter-level regions other than the solid crossing points are made vacant to form a cavity, coupling capacity can be reduced to 1/3 to 1/2 of an ordinary multilevel interconnections wherein inter-level regions are fully filled with an inter-level insulating film.