Abstract: Provided is a PTFE powder that is in a dry state, wherein the percentage of fibrous particles which have an aspect ratio of 1.5 or higher with respect to all particles is 20-60%, and the average major axis size of the fibrous particles is 1-20 ?m. A PTFE powder according to another embodiment of the present invention is in a dry state, wherein the percentage of fibrous particles which have an aspect ratio of 5 or higher with respect to all particles is 60% or more, and the average minor axis size of the fibrous particles is 1-20 ?m.

Abstract: A semiconductor device according to the present embodiment includes a drain electrode, a source electrode, a semiconductor region disposed between the drain electrode and the source electrode, a gate electrode disposed in the semiconductor region via a first insulation film, and a second insulation film disposed between the gate electrode and the source electrode and having a specific dielectric constant higher than a specific dielectric constant of the first insulation film.

Abstract: A power transmission mechanism (2) includes left and right drive shafts (3L, 3R) that transmit rotational torque from a drive source to drive wheels provided on left and right sides of a vehicle. In the right drive shaft (3R) and the left drive shaft (3L), the numbers of rolling elements (23, 33) included in plunging type constant velocity universal joints (6L, 6R) are different from each other.

Abstract: A method for manufacturing a solar cell includes the following steps: a step in which a first electrode layer is formed on top of a substrate; a step in which a selenium-containing p-type CZTS light-absorbing layer is formed on top of the first electrode layer; a step in which the surface of the CZTS light-absorbing layer is brought into contact with an aqueous solution containing an organic sulfur compound, increasing the concentration of sulfur on the surface of the CZTS light-absorbing layer, and an n-type buffer layer is formed on top of CZTS light-absorbing layer; and a step in which a second electrode layer is formed on top of said buffer layer.

Abstract: This solar cell is provided with a substrate (11), a first electrode layer (12) which is arranged on the substrate (11), a p-type CZTS light absorption layer (13) which is arranged on the first electrode layer (12) and which contains copper, zinc, tin, and group VI elements including sulfur and selenium, and an n-type second electrode layer (15) which is arranged on the CZTS light absorption layer (13), wherein the sulfur concentration in the group VI elements in the CZTS light absorption layer (13) increases, in the depth direction, from the side facing the second electrode layer (15) towards the side facing the first electrode layer (12).

Abstract: A CZTS-based thin film solar cell which has a high photovoltaic conversion efficiency which is provided with a substrate, a metal back electrode layer which is formed on the substrate, a p-type CZTS-based light absorption layer which is formed on the metal back electrode layer, and an n-type transparent conductive film which is formed on the p-type CZTS-based light absorption layer and which has a dispersed layer of ZnS-based fine particles at the interface between the p-type CZTS-based light absorption layer and the metal back electrode layer.

Abstract: In a reflective liquid crystal display, source/drain electrodes are formed on an insulation substrate and separated from each other. A pixel electrode is provided which has an end portion unitary formed with the source electrode and the pixel electrode extending over the insulation substrate. A semiconductor layer extends over the insulation substrate in contact directly with a gap between the source/drain electrodes and also extends on at least respective parts of the source/drain electrodes for connecting the source/drain electrodes. A gate insulation film extends over entire parts of the semiconductor layer. A gate electrode extends on at least a part of the gate insulation film so that the gate electrode is positioned to cover the semiconductor layer and to be separated by the gate insulation film from the semiconductor layer for shielding the semiconductor layer from incident light.

Abstract: A cage having a plurality of pockets, and a pair of end faces of each pocket formed in the cage that oppose each other in a circumferential direction of the cage are formed by surfaces cut after hardening and their surface hardness is reduced to a value lower than the surface hardness of a pair of side faces of each pocket that oppose each other in an axial direction of the cage to impart toughness to the bridge portions defined between the pockets and thus to increase the strength of the cage.

Abstract: It is proposed to increase the strength of a cage of a constant-velocity joint. A pair of end faces of each pocket formed in the cage that oppose each other in a circumferential direction of the cage are formed by surfaces cut after hardening and their surface hardness is reduced to a value lower than the surface hardness of a pair of side faces of each pocket that oppose each other in an axial direction of the cage to impart toughness to the bridge portions defined between the pockets and thus to increase the strength of the cage.

Abstract: In a reflective liquid crystal display, source/drain electrodes are formed on an insulation substrate and separated from each other. A pixel electrode is provided which has an end portion unitary formed with the source electrode and the pixel electrode extending over the insulation substrate. A semiconductor layer extends over the insulation substrate in contact directly with a gap between the source/drain electrodes and also extends on at least respective parts of the source/drain electrodes for connecting the source/drain electrodes. A gate insulation film extends over entire parts of the semiconductor layer. A gate electrode extends on at least a part of the gate insulation film so that the gate electrode is positioned to cover the semiconductor layer and to be separated by the gate insulation film from the semiconductor layer for shielding the semiconductor layer from incident light.