Abstract: To improve a coil component having a structure in which a coil part is embedded in a magnetic member. A coil component includes a coil part embedded in the magnetic members and terminal electrodes each made of a conductive paste. Conductor layers constituting the coil part respectively have coil conductor patterns and electrode patterns exposed from a mounting surface. The terminal electrode has an area provided at a position covering the electrode patterns on the mounting surface and areas provided at positions not covering the electrode patterns on the mounting surface. A part of the area constitutes a protruding part protruding in the x-direction. The terminal electrode thus has the protruding part, thereby making misalignment of mounting position in the z-direction less likely to occur at the time of mounting.

Abstract: An information processing system comprises at least one memory and at least one processor. The at least one processor is configured to receive a request of a user; determine whether or not to permit processing of the request based on a term of use of the user; and execute the processing using a neural network based on the request whose processing is determined as being permitted. The term of use includes a condition related to a structure of a processing target of the neural network.

Abstract: A lifting and lowering movement control system for controlling an automatic conveyance vehicle configured to move with an article loaded thereon and a lifting and lowering device configured to move up and down in a state in which the automatic conveyance vehicle is on board, the system includes a lifting and lowering relevant information acquisition section configured to acquire lifting and lowering relevant information relating to the lifting and lowering device scheduled to be boarded by the automatic conveyance vehicle, and a movement control section configured to set a movement path to the lifting and lowering device scheduled to be boarded based on the lifting and lowering relevant information.

Abstract: An electrode structure includes: a plurality of pixel electrodes arranged separately from each other; and a plurality of dielectric layers laminated in a first direction with respect to the plurality of pixel electrodes, in which the plurality of dielectric layers includes: a first dielectric layer that spreads over the plurality of pixel electrodes in a direction intersecting with the first direction; and a second dielectric layer that includes dielectric material having a refractive index higher than that of the first dielectric layer, sandwiches the first dielectric layer together with the plurality of pixel electrodes, and has a slit at a position overlapping space between pixel electrodes adjacent when viewed from the first direction.

Abstract: A developing device includes a developing member to carry developer stored by a developing frame, and a regulating blade having a support plate fixed to the developing frame, a plate-like member, and a regulating member. One end portion of the plate-like member is opposed to the developing member, and the other end portion is welded to the support plate. The regulating member is fixed to a plate-like member surface, and contacts the developing member to regulate a developer thickness on a developing surface. The regulating member is provided with a recessed portion recessed at a regulating member end portion. The regulating member end portion is lower than a regulating member central portion. A plate-like member region welded to the support plate is located at the plate-like member other end portion and overlaps the regulating member central portion and the regulating member end portion at which the recessed portion is provided.

Abstract: A raw material supply apparatus includes: a raw material supply path through which a raw material gas is supplied into a processing container; a valve provided in the raw material supply path; a pressure sensor configured to detect an internal pressure of the raw material supply path; a raw material exhaust path connected to the raw material supply path and through which the raw material gas in the raw material supply path is exhausted; an opening degree adjustment mechanism provided in the raw material exhaust path and configured to control the internal pressure of the raw material supply path based on an adjustment of an opening degree of the opening degree adjustment mechanism; and a controller configured to perform the adjustment of the opening degree of the opening degree adjustment mechanism based on a value detected by the pressure sensor.

Abstract: There is provided a stress reducing method comprising: preparing a film forming apparatus configured to form a tungsten film on a substrate in a chamber by supplying a tungsten raw material gas and a reducing gas into the chamber; and making at least a part of a tungsten film deposited on an in-chamber component into a chlorine-containing tungsten film whose film stress is reduced by adjusting a chlorine concentration, when performing precoating in the chamber and/or when forming the tungsten film on the substrate, using the tungsten raw material gas and the reducing gas.

Abstract: There is provided a film forming method for forming a tungsten film, comprising: preparing a substrate; and forming a tungsten film on the substrate. A chlorine-containing tungsten film whose film stress is adjusted by chlorine concentration in the film is formed as at least a part of the tungsten film.

Abstract: The formation of a tungsten film is promoted when forming the tungsten film using tungsten chloride on an upper layer side of a titanium silicon nitride film. A titanium silicon nitride film is formed on one surface side of a semiconductor wafer as a substrate, and an intermediate film for promoting the formation of the tungsten film made of the tungsten chloride is formed on the upper layer side of the titanium silicon nitride film by using a gas for forming the intermediate film. The tungsten film is formed on an upper layer side of the intermediate film by using a gas of the tungsten chloride.

Abstract: An apparatus for forming a film on a substrate includes: a processing container in which a reaction gas is supplied to a surface of the substrate; a stage installed in the processing container, configured to place the substrate and including a heater; a lifting shaft connected to an external lifting mechanism via a through port formed in the processing container; a casing installed between the processing container and the lifting mechanism and covering the lifting shaft; a lid member disposed to surround the lifting shaft with a gap interposed between the lifting shaft and the lid member, and installed in the processing container; a purge gas supplier configured to supply a purge gas into the casing; and a guide member disposed at a position facing the gap that opens toward an interior of the processing container and including a guide surface configured to guide the purge gas.

Abstract: A showerhead includes a shower plate, a base member in which a gas flow passage is provided, the base member fixing the shower plate, a plurality of gas supply members disposed in a gas diffusion space and connected to the gas flow passage, the gas diffusion space being formed between the shower plate and the base member, and a flow adjusting plate disposed in the gas diffusion space, the flow adjusting plate being disposed on an outer periphery on an outer side from the plurality of gas supply members.

Abstract: A showerhead includes a shower plate and a base member including a gas flow path, the base member fixing the shower plate. The showerhead includes gas supply members disposed at a gas diffusion space, the gas diffusion space being provided between the shower plate and the base member, the gas supply members being connected to the gas flow path, each of the gas supply members including outlets via which gas is radially discharged, and the gas supply members being arranged such that the gas discharged via the outlets of the gas supply members generates a rotational flow.

Abstract: A gas supply device that supplies a processing gas to a processing container storing a substrate and performs a process includes: a raw material container configured to accommodate a liquid raw material or a solid raw material; a carrier gas supply configured to supply a carrier gas into the raw material container; a gas supply path configured to supply the processing gas, which includes the raw material that has been vaporized and the carrier gas, from the raw material container to the processing container; a flow meter provided in the gas supply path and configured to measure a flow rate of the processing gas; and a constricted flow path provided on a downstream side of the flow meter in the gas supply path and configured to increase an average pressure value between the constricted flow path and the flow meter in the gas supply path.

Abstract: A raw material supply apparatus includes: a raw material supply path through which a raw material gas is supplied into a processing container; a valve provided in the raw material supply path; a pressure sensor configured to detect an internal pressure of the raw material supply path; a raw material exhaust path connected to the raw material supply path and through which the raw material gas in the raw material supply path is exhausted; an opening degree adjustment mechanism provided in the raw material exhaust path and configured to control the internal pressure of the raw material supply path based on an adjustment of an opening degree of the opening degree adjustment mechanism; and a controller configured to perform the adjustment of the opening degree of the opening degree adjustment mechanism based on a value detected by the pressure sensor.

Abstract: There is provided a substrate processing method in a substrate processing apparatus including a gas supplier that vaporizes a raw material in a raw material container and supplies a raw material gas together with a carrier gas, including: calibrating a relational expression between a flow rate of the carrier gas and a flow rate of the raw material gas; and processing a substrate in a processing container by controlling the flow rate of the carrier gas based on the relational expression and supplying the raw material gas into the processing container, wherein, in the calibrating the relational expression, the relational expression is derived by allowing the carrier gas to continuously flow.

Abstract: One object of the present invention is to provide a gas diffusion electrode for a polymer electrolyte fuel cell, which has excellent water repellency for quickly supplying and removing a reaction gas, and conductivity for efficiently conducting generated electrical power, a membrane-electrode assembly for a polymer electrolyte fuel cell and a method for producing the same, and a polymer electrolyte fuel cell, and the present invention provides a gas diffusion electrode comprising a nonwoven fabric, a porous fluororesin, and a carbon material.

Abstract: A lithium manganese oxide having a cubic crystal spinel structure, which has a composition represented by {Li}[LixMn2−x]O4 wherein { } represents 8a site, [ ] represents 16d site, and 0.08<x≦0.15, wherein the lattice constant (a) (unit: angstrom) of the cubic crystal is represented by the following formula: a≦8.2476−0.25×x.