Abstract: A semiconductor device includes a plurality of semiconductor chips disposed in a vertical form through a spacer, in which a shield layer having a thickness such that an electromagnetic field radiation generated from a generation source of the semiconductor chip can sufficiently be absorbed is disposed between the semiconductor chips.

Abstract: Provided is a dielectric multilayer film mirror including: a substrate; a first multilayer film structure formed on the substrate and including alternately stacked layers of a first low refractive index material having a refractive index equal to or lower than a refractive index of a second low refractive index material and a first high refractive index material having a refractive index higher than a refractive index of a second high refractive index material; and a second multilayer film structure formed on the first multilayer film structure and including alternately stacked layers of the second low refractive index material and the second high refractive index material, the second high refractive index material having a refractive index higher than a refractive index of the second low refractive index material and having an extinction coefficient lower than an extinction coefficient of the first high refractive index material.

Abstract: A semiconductor device includes a plurality of semiconductor chips disposed in a vertical form through a spacer, in which a shield layer having a thickness such that an electromagnetic field radiation generated from a generation source of the semiconductor chip can sufficiently be absorbed is disposed between the semiconductor chips.

Abstract: Disclosed herein is a semiconductor integrated circuit including: line buffers; an alpha channel first selector; an alpha channel digital-to-analog converter; a beta channel digital-to-analog converter; a redundant digital-to-analog converter; an alpha channel second selector; a beta channel second selector; an alpha channel amplifier; and a beta channel amplifier.

Abstract: Disclosed herein is a semiconductor integrated circuit including: line buffers; an alpha channel first selector; an alpha channel digital-to-analog converter; a beta channel digital-to-analog converter; a redundant digital-to-analog converter; an alpha channel second selector; a beta channel second selector; an alpha channel amplifier; and a beta channel amplifier.

Abstract: A semiconductor integrated circuit is disclosed which includes: a first D/A converter; a second D/A converter; an amplifier configured to amplify an output of the first D/A converter; an operational amplifier configured to input an output of the second D/A converter; and a selector configured to effect switchover between a normal mode and a test mode, the normal mode being a mode in which the operational amplifier is caused to function as an amplifier for amplifying the output of the second D/A converter, the test mode being a mode in which the operational amplifier is caused to function as a comparator for comparing the output of the second D/A converter with the output of the first D/A converter.