Abstract: Provided is an imaging device including: a first semiconductor substrate provided with a photoelectric conversion element, a second semiconductor substrate stacked on the first semiconductor substrate with an interlayer insulating film interposed therebetween and provided with a pixel circuit that reads out charges generated in the photoelectric conversion element as a pixel signal, and a via that penetrates the interlayer insulating film and electrically connects a first surface of the first semiconductor substrate facing the second semiconductor substrate and at least a part of a second surface of the second semiconductor substrate facing the first surface.

Abstract: A method of manufacturing a photoelectric conversion device includes: forming a photoelectric conversion structure in which a first semiconductor layer of a first electrical conductivity type is provided on a non-light-receiving surface, on side opposite to a light-receiving surface, of a light-absorbing layer including a compound semiconductor; forming an opening by etching at least a portion of the photoelectric conversion structure, the opening that separates the photoelectric conversion structure for each pixel; and forming a pixel separator of a second electrical conductivity type on the light-absorbing layer exposed in the opening, the pixel separator extending in a thickness direction of the light-absorbing layer.

Abstract: A semiconductor device includes: a multilayered wiring layer including an insulation layer (30) and a diffusion prevention layer (21, 22, 23, 24) stacked alternately and including a wiring layer (11, 12, 13) internally; a gap section (50) disposed at least in a portion of the insulation layer (30); and a support section (60) disposed at least in a portion of the gap section (50) and configured to support the multilayered wiring layer.

Abstract: In a method for forming a fluorocarbon-based insulating film to be in contact with a metal, a microwave is irradiated to the metal to which moisture is adhered in a hydrogen-containing atmosphere. Then plasma CVD using a fluorocarbon-based gas is performed on the metal to which the microwave is irradiated to form the insulating film.

Abstract: A film forming method according to a first embodiment includes a formation step of forming wiring in a groove and/or a hole formed in an insulating film containing fluorine by using wiring metal containing a dopant for preventing intrusion of the fluorine from the insulating film. The film forming method according to a first embodiment further includes a step of performing heat treatment after the wiring is formed, whereby a high concentration portion containing the dopant in a concentration higher than inside the wiring is formed on an interface of the wiring.

Abstract: In a method for forming a fluorocarbon-based insulating film to be in contact with a metal, a microwave is irradiated to the metal to which moisture is adhered in a hydrogen-containing atmosphere. Then plasma CVD using a fluorocarbon-based gas is performed on the metal to which the microwave is irradiated to form the insulating film.

Abstract: A semiconductor device manufacturing method includes: performing nitrogen plasma processing on an interlayer insulating film made of a fluorine containing carbon film having a recess formed in a surface thereof in a predetermined pattern; forming a Ru film directly on the fluorine containing carbon film subjected to the nitrogen plasma processing. The semiconductor device manufacturing method further includes filling a Cu film in the recess to form a Cu wiring.

Abstract: A method for manufacturing semiconductor devices includes the steps of annealing an insulating layer and forming a barrier layer including a metal element over the insulating layer. The insulating layer includes a fluorocarbon (CFx) film. The barrier layer is formed by a high-temperature sputtering process after the annealing step.

Abstract: The interlayer insulating layer forming method for forming an interlayer insulating layer of a semiconductor device via a plasma CVD method includes: carrying a substrate into a depressurized processing container; supplying a plasma generating gas to a first space spaced apart from the substrate; exciting the plasma generating gas in the first space; and supplying a raw material gas including a boron compound that includes at least a hydrogen group or hydrocarbon group, to a second space between the first space and the substrate. Also, a semiconductor device is interconnected in a multilayer through an interlayer insulating layer having an amorphous structure including boron, carbon, and nitrogen, wherein, in the interlayer insulating layer, a hydrocarbon group or an alkyl amino group is mixed in the amorphous structure comprising hexagonal boron nitride and cubic boron nitride.

Abstract: A method for manufacturing semiconductor devices includes the steps of annealing an insulating layer and forming a barrier layer including a metal element over the insulating layer. The insulating layer includes a fluorocarbon (CFx) film. The barrier layer is formed by a high-temperature sputtering process after the annealing step.