Patents by Inventor Takuya Mino
Takuya Mino has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220013892Abstract: The conductive device includes a substrate and an electrically conductive portion. The electrically conductive portion is provided on the substrate. The electrically conductive portion includes an electrically conductive part and a low resistance conductive layer. The electrically conductive part is provided on the substrate and includes an electrically conductive particle and an organic binder. The low resistance conductive layer covers at least part of a surface of the electrically conductive part and has lower resistivity than the electrically conductive part.Type: ApplicationFiled: February 6, 2020Publication date: January 13, 2022Applicant: Panasonic Intellectual Property Management Co., Ltd.Inventors: Takuya MINO, Takanori AKETA
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Patent number: 10879423Abstract: An ultraviolet light-emitting element includes: a multilayer stack in which an n-type AlGaN layer, a light-emitting layer, a first p-type AlGaN layer, and a second p-type AlGaN layer are arranged in this order; a negative electrode; and a positive electrode. The first p-type AlGaN layer has a larger Al composition ratio than first AlGaN layers serving as well layers. The second p-type AlGaN layer has a larger Al composition ratio than the first AlGaN layers. The first p-type AlGaN layer and the second p-type AlGaN layer both contain Mg. The second p-type AlGaN layer has a higher maximum Mg concentration than the first p-type AlGaN layer. The second p-type AlGaN layer includes a region where an Mg concentration increases in a thickness direction thereof as a distance from the first p-type AlGaN layer increases in the thickness direction.Type: GrantFiled: November 1, 2016Date of Patent: December 29, 2020Assignees: PANASONIC CORPORATION, RIKENInventors: Takayoshi Takano, Takuya Mino, Jun Sakai, Norimichi Noguchi, Hideki Hirayama
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Patent number: 10697089Abstract: An epitaxial substrate includes: a single crystal substrate including projections arranged in an array on a plane. Each projection has a conical or pyramidal shape tapered in a normal direction to the plane. The AlN layer includes: a first AlN crystal covering the plane and the projections with tips of the projections being exposed; second AlN crystals protruding from the tips of the projections along the normal direction and each having a shape of a column whose cross-sectional area increases as a distance from a tip of a corresponding projection increases; and a third AlN crystal as a layer interconnecting ends of the second AlN crystals, opposite the single crystal substrate.Type: GrantFiled: November 1, 2016Date of Patent: June 30, 2020Assignees: PANASONIC CORPORATION, RIKENInventors: Norimichi Noguchi, Takuya Mino, Takayoshi Takano, Jun Sakai, Hitomichi Takano, Kenji Tsubaki, Hideki Hirayama
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Patent number: 10593828Abstract: A UV LED element, which is an exemplary ultraviolet light-emitting diode according to the present invention, includes an n-type conductive layer, a light-emitting layer, an electron block layer, and a p-type contact layer, all of which are arranged in this order. Bandgap energy of the electron block layer satisfies Econtact?EEBL, where Econtact designates bandgap energy of the p-type contact layer and EEBL designates the bandgap energy of the electron block layer. The electric apparatus includes the UV LED element as a light source for emitting an ultraviolet ray.Type: GrantFiled: October 25, 2016Date of Patent: March 17, 2020Assignees: RIKEN, PANASONIC CORPORATIONInventors: Hideki Hirayama, Masafumi Jo, Takuya Mino, Norimichi Noguchi, Takayoshi Takano, Jun Sakai
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Publication number: 20190067521Abstract: An ultraviolet light-emitting element includes: a multilayer stack in which an n-type AlGaN layer, a light-emitting layer, a first p-type AlGaN layer, and a second p-type AlGaN layer are arranged in this order; a negative electrode; and a positive electrode. The first p-type AlGaN layer has a larger Al composition ratio than first AlGaN layers serving as well layers. The second p-type AlGaN layer has a larger Al composition ratio than the first AlGaN layers. The first p-type AlGaN layer and the second p-type AlGaN layer both contain Mg. The second p-type AlGaN layer has a higher maximum Mg concentration than the first p-type AlGaN layer. The second p-type AlGaN layer includes a region where an Mg concentration increases in a thickness direction thereof as a distance from the first p-type AlGaN layer increases in the thickness direction.Type: ApplicationFiled: November 1, 2016Publication date: February 28, 2019Applicants: PANASONIC CORPORATION, RIKENInventors: Takayoshi TAKANO, Takuya MINO, Jun SAKAI, Norimichi NOGUCHI, Hideki HIRAYAMA
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Publication number: 20190040546Abstract: An epitaxial substrate includes: a single crystal substrate including projections arranged in an array on a plane. Each projection has a conical or pyramidal shape tapered in a normal direction to the plane. The AlN layer includes: a first AlN crystal covering the plane and the projections with tips of the projections being exposed; second AlN crystals protruding from the tips of the projections along the normal direction and each having a shape of a column whose cross-sectional area increases as a distance from a tip of a corresponding projection increases; and a third AlN crystal as a layer interconnecting ends of the second AlN crystals, opposite the single crystal substrate.Type: ApplicationFiled: November 1, 2016Publication date: February 7, 2019Applicants: PANASONIC CORPORATION, RIKENInventors: Norimichi NOGUCHI, Takuya MINO, Takayoshi TAKANO, Jun SAKAI, Hitomichi TAKANO, Kenji TSUBAKI, Hideki HIRAYAMA
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Publication number: 20180331250Abstract: A UV LED element, which is an exemplary ultraviolet light-emitting diode according to the present invention, includes an n-type conductive layer, a light-emitting layer, an electron block layer, and a p-type contact layer, all of which are arranged in this order. Bandgap energy of the electron block layer satisfies Econtact?EEBL, where Econtact designates bandgap energy of the p-type contact layer and EEBL designates the bandgap energy of the electron block layer. The electric apparatus includes the UV LED element as a light source for emitting an ultraviolet ray.Type: ApplicationFiled: October 25, 2016Publication date: November 15, 2018Applicants: RIKEN, PANASONIC CORPORATIONInventors: Hideki HIRAYAMA, Masafumi JO, Takuya MINO, Norimichi NOGUCHI, Takayoshi TAKANO, Jun SAKAI
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Patent number: 9843163Abstract: An ultraviolet light emitting element includes a light emitting layer, a cap layer, an electron barrier layer. The light emitting layer has a multi-quantum well structure including barrier layers each including a first AlGaN layer and well layers each including a second AlGaN layer. The electron barrier layer includes at least one first p-type AlGaN layer and at least one second p-type AlGaN layer. The cap layer is located between the first p-type AlGaN layer and one of the well layers closest to the first p-type AlGaN layer. The cap layer is a third AlGaN layer having an Al composition ratio greater than an Al composition ratio of each of the well layers and less than an Al composition ratio of the first p-type AlGaN layer. The cap layer has a thickness of greater than or equal to 1 nm and less than or equal to 7 nm.Type: GrantFiled: March 26, 2015Date of Patent: December 12, 2017Assignee: PANASONIC CORPORATIONInventors: Takuya Mino, Takayoshi Takano, Norimichi Noguchi, Kenji Tsubaki, Jun Sakai, Hideki Hirayama
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Publication number: 20170294559Abstract: The semiconductor device includes: an AlGaN layer; a contact electrode; an insulating film; and a passivation film. The semiconductor device further includes: an extended wire extending over the contact electrode and the insulating film; and a pad electrode electrically connected to the extended wire. The passivation film covers the insulating film and the extended wire and including an opening for exposing the pad electrode. The insulating film accommodates the opening in a plan view. The passivation film accommodates the contact electrode in a plan view. The semiconductor device further includes a heat dissipation layer on a surface of the passivation film.Type: ApplicationFiled: November 4, 2015Publication date: October 12, 2017Inventors: Koji GOTO, Shintaro HAYASHI, Akihiko MURAI, Takuya MINO, Saki AOKI, Kenji TSUBAKI
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Publication number: 20170110852Abstract: An ultraviolet light emitting element includes a light emitting layer, a cap layer, an electron barrier layer. The light emitting layer has a multi-quantum well structure including barrier layers each including a first AlGaN layer and well layers each including a second AlGaN layer. The electron barrier layer includes at least one first p-type AlGaN layer and at least one second p-type AlGaN layer. The cap layer is located between the first p-type AlGaN layer and one of the well layers closest to the first p-type AlGaN layer. The cap layer is a third AlGaN layer having an Al composition ratio greater than an Al composition ratio of each of the well layers and less than an Al composition ratio of the first p-type AlGaN layer. The cap layer has a thickness of greater than or equal to 1 nm and less than or equal to 7 nm.Type: ApplicationFiled: March 26, 2015Publication date: April 20, 2017Applicant: PANASONIC CORPORATIONInventors: Takuya MINO, Takayoshi TAKANO, Norimichi NOGUCHI, Kenji TSUBAKI, Jun SAKAI, Hideki HIRAYAMA
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Patent number: 9293646Abstract: In a method of manufacture for a nitride semiconductor light emitting element including: a monocrystalline substrate; and an AlN layer; and a first nitride semiconductor layer of a first electrical conductivity type; and a light emitting layer made of an AlGaN-based material; and a second nitride semiconductor layer of a second electrical conductivity type, a step of forming the AlN layer includes: a first step of supplying an Al source gas and a N source gas into the reactor to generate a group of AlN crystal nuclei having Al-polarity to be a part of the AlN layer on the surface of the monocrystalline substrate; and a second step of supplying the Al source gas and the N source gas into the reactor to form the AlN layer, after the first step.Type: GrantFiled: July 5, 2012Date of Patent: March 22, 2016Assignees: PANASONIC CORPORATION, RIKENInventors: Takayoshi Takano, Takuya Mino, Norimichi Noguchi, Kenji Tsubaki, Hideki Hirayama
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Publication number: 20150221502Abstract: The epitaxial wafer includes a silicon substrate, an aluminum nitride thin film feeing a main surface of the silicon substrate, and an aluminum deposit between the silicon substrate and the aluminum nitride thin film so as to inhibit formation of silicon nitride. In the method for producing the epitaxial wafer, to form the aluminum deposit on the main surface of the silicon substrate, trimethyl aluminum is supplied into a reactor after a substrate temperature defined as a temperature of the silicon substrate is adjusted to a first predetermined temperature equal to or mare than. 300° C. and less than 1200° C. Thereafter, to form the aluminum nitride thin film facing the main surface of the silicon substrate, trimethyl aluminum and ammonia are supplied into the reactor after the substrate temperature is adjusted to a second predetermined temperature equal to or more than 1200° C. and equal to or less than 1400° C.Type: ApplicationFiled: March 8, 2013Publication date: August 6, 2015Applicant: RIKENInventors: Takuya Mino, Takayoshi Takano, Kenji Tsubaki, Hideki Hirayama, Masakazu Sugiyama
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Publication number: 20140209857Abstract: In a method of manufacture for a nitride semiconductor light emitting element including: a monocrystalline substrate; and an AlN layer; and a first nitride semiconductor layer of a first electrical conductivity type; and a light emitting layer made of an AlGaN-based material; and a second nitride semiconductor layer of a second electrical conductivity type, a step of forming the AlN layer includes: a first step of supplying an Al source gas and a N source gas into the reactor to generate a group of MN crystal nuclei having Al-polarity to be a part of the AlN layer on the surface of the monocrystalline substrate; and a second step of supplying the Al source gas and the N source gas into the reactor to form the AlN layer, after the first step.Type: ApplicationFiled: July 5, 2012Publication date: July 31, 2014Applicants: RIKEN, PANASONIC CORPORATIONInventors: Takayoshi Takano, Takuya Mino, Norimichi Noguchi, Kenji Tsubaki, Hideki Hirayama